【产品】采用SOT-89封装的硅NPN晶体管CXT5401、CXT5401E，专为高压放大器应用而设计
Central Semiconductor （简称Central）公司是美国中央半导体公司，半导体产品处于世界领先水平，其运营团队提供最高水平的技术支持，出色的销售支持和优质的服务。Central公司推出的一系列硅PNP晶体管——CXT5401和CXT5401E，CXT5401采用外延平面工艺制造，环氧树脂模塑，表面贴装封装，均采用SOT-89封装，该系列器件专为高压放大器应用而设计。其系列具体实物图如图1所示。
图1.CXT5401、CXT5401E硅NPN晶体管实物图
CXT5401、CXT5401E硅NPN晶体管集电极基极电压VCBO分别为160V和250V，集电极发射极电压VCEO分别为150V和220V，发射极-基极电压VEBO分别为5.0V和7.0V，集电极连续电流IC均为600mA，结壳热阻为104°C/W。另外，CXT5401、CXT5401E硅NPN晶体管夫人耗散功率PD均为1.2W（TA=25℃），但实际工作时的耗散功率会小很多。其系列工作和存储结温的范围均为-65 °C~+150 °C，具有耐高/低温的能力，适应性能强，在恶劣的环境条件下也可正常工作，这提高了其在各个电路设计中的可靠性。其系列封装尺寸和引脚定义图如图2所示。
图2.CXT5401、CXT5401E硅NPN晶体管封装尺寸和引脚定义图
CXT5401、CXT5401E硅NPN晶体管具有较高的耐压值，集电极-基极击穿电压BVCBO最小值分别为160V和250V，三极管基极开路时，集电极-发射极反向击穿电压BVCEO最小值分别为150V和220V，三极管集电极开路时，发射极-基极反向击穿电压BVEBO为分别为5.0和7.0V，有较强的抗压能力，可保证器件正常工作而不被损坏，具有较低的饱和压降。其最高截止频率fT均为300MHZ（VCE=10V, IC=10mA, f=100MHz），当IC=10mA, IB=1.0mA时，集电极-发射极间饱和压降VCE(SAT)最大值分别为0.2V和0.1V。而CXT5401E硅NPN晶体管低漏电流最大值仅为50nA，漏电流所造成的危害较小，从而能够较好地保护芯片不受损坏，其辅助设备为CXT5551E。
CXT5401、CXT5401E硅NPN晶体管的主要特点：
• 集电极基极击穿电压VCBO分别为160V和250V
• 集电极发射极电压VCEO分别为150V和220V
• 发射极-基极电压VEBO分别为5.0V和7.0V
• 其耗散功率PD均为1.2W（TA=25℃）
• 集电极连续电流IC均为600mA
• 工作及存储结温范围为-65°C~+150°C
• 结壳热阻均为104°C/W
• 功率损耗均为1.2W
CXT5401、CXT5401E硅NPN晶体管的典型应用：
• 高电压放大器
• CXT5401E适用于电话应用
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目录- Part Number Index Small Signal Transistors MOSFETs Bipolar Power Transistors Diodes Protection Devices Rectifiers Thyristors Multi Discrete Modules Package Mechanical Specifications
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电子商城
品牌：Central Semiconductor
品类：SURFACE MOUNT SILICON PNP TRANSISTORS
价格：
现货： 0
现货市场
服务
可烧录IC封装SOP/MSOP/SSOP/TSOP/TSSOP/PLCC/QFP/QFN/MLP/MLF/BGA/CSP/SOT/DFN；IC包装Tray/Tube/Tape；IC厂商不限，交期1-3天。支持IC测试（FT/SLT），管装、托盘装、卷带装包装转换，IC打印标记加工。
最小起订量： 1pcs 提交需求>
测试范围：扬兴晶振全系列晶体，通过对晶体回路匹配分析，调整频率、驱动功率和起振能力，解决频偏、不起振、干扰、频率错误等问题。技术专家免费分析，测完如有问题，会进一步晶振烧录/修改电路。
实验室地址： 深圳 提交需求>
授权代理品牌：集成电路
授权代理品牌：分立元件
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