【产品】采用SOT-89封装的硅NPN晶体管CXT5401、CXT5401E,专为高压放大器应用而设计

2018-11-20 Central Semiconductor
硅PNP晶体管,CXT5401,CXT5401E,Central Semiconductor 硅PNP晶体管,CXT5401,CXT5401E,Central Semiconductor 硅PNP晶体管,CXT5401,CXT5401E,Central Semiconductor 硅PNP晶体管,CXT5401,CXT5401E,Central Semiconductor

Central Semiconductor (简称Central)公司是美国中央半导体公司,半导体产品处于世界领先水平,其运营团队提供最高水平的技术支持,出色的销售支持和优质的服务。Central公司推出的一系列硅PNP晶体管——CXT5401和CXT5401E,CXT5401采用外延平面工艺制造,环氧树脂模塑,表面贴装封装,均采用SOT-89封装,该系列器件专为高压放大器应用而设计。其系列具体实物图如图1所示。

图1.CXT5401、CXT5401E硅NPN晶体管实物图


CXT5401、CXT5401E硅NPN晶体管集电极基极电压VCBO分别为160V和250V,集电极发射极电压VCEO分别为150V和220V,发射极-基极电压VEBO分别为5.0V和7.0V,集电极连续电流IC均为600mA,结壳热阻为104°C/W。另外,CXT5401、CXT5401E硅NPN晶体管夫人耗散功率PD均为1.2W(TA=25℃),但实际工作时的耗散功率会小很多。其系列工作和存储结温的范围均为-65 °C~+150 °C,具有耐高/低温的能力,适应性能强,在恶劣的环境条件下也可正常工作,这提高了其在各个电路设计中的可靠性。其系列封装尺寸和引脚定义图如图2所示。

图2.CXT5401、CXT5401E硅NPN晶体管封装尺寸和引脚定义图


CXT5401、CXT5401E硅NPN晶体管具有较高的耐压值,集电极-基极击穿电压BVCBO最小值分别为160V和250V,三极管基极开路时,集电极-发射极反向击穿电压BVCEO最小值分别为150V和220V,三极管集电极开路时,发射极-基极反向击穿电压BVEBO为分别为5.0和7.0V,有较强的抗压能力,可保证器件正常工作而不被损坏,具有较低的饱和压降。其最高截止频率fT均为300MHZ(VCE=10V, IC=10mA, f=100MHz),当IC=10mA, IB=1.0mA时,集电极-发射极间饱和压降VCE(SAT)最大值分别为0.2V和0.1V。而CXT5401E硅NPN晶体管低漏电流最大值仅为50nA,漏电流所造成的危害较小,从而能够较好地保护芯片不受损坏,其辅助设备为CXT5551E。


CXT5401、CXT5401E硅NPN晶体管的主要特点:

• 集电极基极击穿电压VCBO分别为160V和250V

• 集电极发射极电压VCEO分别为150V和220V

• 发射极-基极电压VEBO分别为5.0V和7.0V

• 其耗散功率PD均为1.2W(TA=25℃)

• 集电极连续电流IC均为600mA

• 工作及存储结温范围为-65°C~+150°C

• 结壳热阻均为104°C/W

• 功率损耗均为1.2W


CXT5401、CXT5401E硅NPN晶体管的典型应用:

• 高电压放大器

• CXT5401E适用于电话应用

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【产品】50V/50mA高增益高频硅PNP晶体管,适用低噪开关电路、噪声系数低至2dB

Central的经典型硅PNP晶体管CMPT5086、CMPT5086B、CMPT5087系列是特别针对于高增益、低噪声要求的应用而设计生产的,其增益放大倍数和噪声系数都极为优秀,噪声系数分别为CMPT5086、CMPT5086B=3.0dB,CMPT5087=2.0dB,符合低噪声设计要求。具有良好的电气可靠性、工作性能稳定性和热稳定性。

新产品    发布时间 : 2018-11-01

数据手册  -  CENTRAL SEMICONDUCTOR  - R1  - 20-November 2009 PDF 英文 下载

数据手册  -  CENTRAL SEMICONDUCTOR  - 26-July 2013 PDF 英文 下载 查看更多版本

【产品】增强型硅PNP开关晶体管CMPT2907AE,为开关应用,接口电路和驱动电路而设

CENTRAL SEMICONDUCTOR推出CMPT2907AE是一种采用SOT-23表面贴装封装的硅PNP开关晶体管,该晶体管是CMPT2907A的增强版本。为开关应用,接口电路和驱动电路应用而设计。主要用于接口电路,驱动电路,最有高性能等特性。

新产品    发布时间 : 2019-04-08

BCW61B BCW61C BCW61D SURFACE MOUNT SILICON PNP TRANSISTORS

型号- BCW61B,BCW61C,BCW61B SERIES,BCW61D

数据手册  -  CENTRAL SEMICONDUCTOR  - R3  - 21-October 2021 PDF 英文 下载

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MCU烧录/Flash烧录/CPLD烧录

可烧录IC封装SOP/MSOP/SSOP/TSOP/TSSOP/PLCC/QFP/QFN/MLP/MLF/BGA/CSP/SOT/DFN;IC包装Tray/Tube/Tape;IC厂商不限,交期1-3天。支持IC测试(FT/SLT),管装、托盘装、卷带装包装转换,IC打印标记加工。

最小起订量: 1pcs 提交需求>

晶体匹配测试

提供CE测试服务,通过晶体回路匹配分析,给出测试报告。支持EPSON所有MHz无源晶体、32.768KHz晶体。支持到场/视频直播测试,资深专家全程指导。

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