全球碳化硅MOSFET顶尖制造商之一:美浦森(Maplesemi)
产品亮点:
高压MOSFET(VDMOS):电压200-900V;TO-220/TO-247/TO-251/TO-252/TO-262等封装;融合仙童制程和工艺;同种规格产品在EMI表现高6DB左右,抗冲击表现高10%。
碳化硅二极管(SiC DIODE):电压650-1200 V,电流2-40A ;TO-252/TO220/TO247等封装;符合车规AEC-Q101标准;VF值低至1.35 V,650V系列反向耐压达到850V以上,1200V系列反向耐压达到1600 V以上。
超结MOSFET(SJMOS):电压500V/600V/650V/800V,电流5A-76A;TO-220/TO-247/TO-251/TO-252/TO-262等封装;使用多层外延工艺,同等型号和条件下,EAS、EMI和稳定性更好;导通电阻低至42mΩ。
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型号- MKS4J022202D00MSSD,10-FZ12NMA080NS03-M260F,0505025.MX52LEP,TFLEX HD300,BGM111,C2M1000170D,EFR32MG13P732F512GM48-C,RBN75H125S1GP4-A0,10-FY12NMA160SH01-M820F18,KT05,PS9402,SGM6022,MLX91208,28R1101-000,28R0610-000,30-FT12NMA160SH-M669F28,PS9031,LSIC2SD120E30CC,30-FT12NMA200SH-M660F08,LXXXX 15.00/05/90 4.5SN GR,28R1476-100,92ML,LX 15.00/05/90 4.5SN GR BX,MKS4J033305D00KSSD,TPCM780,RC12-6-01LS,SMBJ18CA,28R1953-000,PS9531L3,SI86XX,28B0141-000,WDU50N,SGM6032,WGM110,R5F56514FDLJ,C4D30120D,WDU70N,RBN40H125S1GPQ-A0,C2M0080120D,V23990-P629-L43,SGM2019,LSIC1MO120E0080,SID11X2K,SI8261BCD-C-IS
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SiC二极管KS10065-A超低的正向导通电压(VF值),这有助于降低正向导通损耗,提高整体效率。同时,由于其零反向恢复特性,它在反向恢复过程中极大地减少了反向恢复损耗,并减少了EMI干扰,这使得1500W充电器能够实现更高的效率和更小的温升。
应用方案 发布时间 : 2024-09-27
东海半导体授权世强硬创,代理IGBT单管/模块、SiC二极管/MOS
40A 1200V TRENCHSTOP IGBT采用先进的沟槽和场截止技术设计,不仅能提供优异的VCEsat和开关速度、低栅极电荷,还拥有卓越的开关速度,VCEsat中的正温度系数带来轻松并联的能力。
签约新闻 发布时间 : 2023-09-18
简化电动汽车充电器和光伏逆变器的高压电流检测
在电动汽车充电器中,电流传感器用于测量输入交流电源、直流/直流转换器和输出电源等位置的电流,以确认充电器是否正确地将交流电输送到电动汽车的车载充电器系统,或者将直流电直接输送到电池。如今,400V 电池正在朝着 800V 甚至更高电压的方向发展,以实现更大功率和快速充电。
设计经验 发布时间 : 2023-11-23
1200V & 650V SiC Diode Gen 1.5 SiC Diode for the Excellence in Power System Design
型号- PCDH20120CCGB,PCDD05120GB,PCDP1065GB,PCDD1065GB,PCDP1065GC,PCDH2065CCGC,PCDP0665GB,PCDD10120GB,PCDH40120CCGB,PCDH30120CCGB,PCDP0865GB,PCDP0865GC,PCDH3065CCGB,PCDH3065CCGC,PCDH4065CCGC,PCDH2065CCGB,PCDH4065CCGB,PCDD0665GB,PCDP0465GB,PCDD0465GB,PCDP1265GB,PCDP1265GC,PCDP1665GB,PCDP1665GC,PCDP2065GC,PCDP2065GB,PCDD0865GB
锐骏半导体(Ruichips)应用于充电器的MOSFET选型指南
型号- RUH6088M,RU60E16L,RU6085H,RUH4080M,RU4022H,RU3018M2,RU60E16R,RU3020H,RUH1H80M,RU4030M2,RU3012M4
锐骏半导体(Ruichips)应用于无线充电器的MOSFET选型指南
目录- 无线充电器概述 无线充工作方式 无线充电器基本原理 MOSFET选型
型号- RU6035M2,RU30D16H,RU3040M2,RU30L30M,RU30J30M,RU3030M2,RUH3030M2,RU30D20M2,RU3400B
扬杰科技2024慕尼黑上海电子展回顾,展示新能源汽车、光伏逆变器、储能逆变器等多元领域的产品解决方案
2024年7月8-10日,为期三天的慕尼黑上海电子展圆满落幕,扬杰科技凭借卓越先进的展品、行业应用解决方案、独具一格的展台设计,现场销售人员、FAE、PM、行业经理等进行专业接待交流,吸引大量新老客户来现场进行互相交流探讨,展会现场人流如织,使得扬杰科技成为本次展会一大亮点。
原厂动态 发布时间 : 2024-07-13
【选型】新洁能Super Trench MOSFET系列产品,性价比极高,提供高效率和稳定性逆变器方案
在电动传动系统中,逆变器控制电机。这是电动汽车中的一个关键部分,就像燃油车辆的发动机管理系统(EMS)一样。无论电机是同步的、异步的还是无刷直流的,逆变器的工作方式都是相似的,由集成VCU控制,其设计目的是最大限度地减少开关损耗,提高热效率。逆变器不仅驱动电机,还能回收动能,并将能量反馈给电池。因此,逆变器的工作效率直接影响到整车运行效率。
器件选型 发布时间 : 2023-05-28
武汉芯源(CW)MOSFET选型指南
目录- MOSFET
型号- CWS70R430AX,CWS60R125AF,CWH65R041AZ,CWS55R580AF,CWS7N65ADR,CWS65R290ADR,CWS20N65AZ,CWS60R090AZ,CWS60R180BF,CWS24N60AZ,CWS5N65AF,CWS60R125AZ,CWS55R190AF,CWH60R070AZ,CWS7N65AT,CWS11N65AF,CWS55R580ADR,CWS11N65AC,CWH65R070AZ,CWS15N60AF,CWS11N65AX,CWS20N60AC,CWS20N60AF,CWS70R430AF,CWS11N65ADR,CWS7N65AP5R,CWS55R190BF,CWS55R140AF,CWH60R074BZ,CWS20N60AZ,CWS50R580AF,CWS5N65ADR,CWS15N70AF,CWS60R099BF,CWS5N70AT,CWS60R130BZ,CWS7N65AS2R,CWS65R190BDR,CWS60R150AF,CWS55R140BF,CWS5N70ADR,CWS5N65AT,CWS60R090AF,CWH65R041BZ,CWS70R430CDR,CWS7N65AF,CWS20N65AP8R,CWS70R430ADR,CWS15N65AF,CWS15N65AC,CWS20N65AC,CWS20N65AF,CWS60R099BZ,CWS60R130BF,CWS5N70AF,CWS24N60AF
CRMICRO推出一系列可靠、高效的高压及低压MOSFET,满足智能手机和平板电脑等充电器的需求
为满足当下智能手机和平板电脑等充电器的需求,CRMICRO推出了一系列可靠、高效的高压及低压MOSFET。多种封装形式如DFN8*8、DFN5*6等可满足终端应用小尺寸外形的需求。
器件选型 发布时间 : 2024-07-12
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可定制LAMP LED、 CHIP LED、 PLCC LED、 汽车用车规级LED、COB LED的尺寸/电压/电流等参数,电压1.5-37V,电流5-150mA,波长470-940nm。
最小起订量: 30000 提交需求>
可定制单色光灯珠、双色灯珠、全彩灯珠、发光二极管、贴片灯珠、贴片LED等产品,尺寸:0.6*0.3mm-3.2*2.7mm,波长:405-940nm,亮度:24-750mcd,电压:1.5-3.5V。
最小起订量: 3000 提交需求>
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