CISSOID Expands Its Sic Intelligent Power Modules Platform for E-Mobility and Aerospace Markets

2021-09-03 CISSOID
3-Phase Silicon Carbide MOSFET,SiC MOSFET,CXT-PLA3SA12340AA,CMT-PLA3SB12340AA 3-Phase Silicon Carbide MOSFET,SiC MOSFET,CXT-PLA3SA12340AA,CMT-PLA3SB12340AA 3-Phase Silicon Carbide MOSFET,SiC MOSFET,CXT-PLA3SA12340AA,CMT-PLA3SB12340AA 3-Phase Silicon Carbide MOSFET,SiC MOSFET,CXT-PLA3SA12340AA,CMT-PLA3SB12340AA

Mont-Saint-Guibert, Belgium – April 27, 2021. CISSOID, the leader in high-temperature Semiconductors and Power Modules, is adding to its growing platform of 3-Phase Silicon Carbide (SiC) MOSFET Intelligent Power Module (IPM) products by introducing new liquid-cooled modules for E-mobility tailored for lower switching losses or for a higher power. The company is also introducing a module based on a lightweight AlSiC flat baseplate that meets the demand for natural convection or forced cooling in aerospace and in dedicated industrial applications. These products integrate a 3-Phase SiC MOSFET module with a powerful gate driver.


These new IPMs leverage a technology platform that can be rapidly adapted to new voltage, power, and cooling requirements. They greatly accelerate the design of SiC-based power converters enabling high efficiency and high power density. The embedded gate driver solves multiple challenges related to fast-switching SiC transistors: negative drive and Active Miller Clamping (AMC) prevent parasitic turn-on; Desaturation detection and Soft-Shut-Down (SSD) reacts rapidly but safely to short-circuit events; Undervoltage Lockout (UVLO) functions on gate driver and DC bus voltages monitor the proper operation of the system.


Fig.1


Two new liquid-cooled power modules based on a pin fin baseplate are rated for 1200V blocking voltages and for 340A to 550A Maximum Continuous Currents. The On-Resistance ranges from 2.53mOhms to 4.19mOhms depending on the current rating. The total switching energies are as low as 7.48mJ (Eon) and 7.39mJ (Eoff) at 600V/300A. The co-design of the power module and the gate driver enables optimizing the IPMs for the lowest switching energies by carefully tuning dV/dt and controlling voltage overshoots inherent to fast switching. The Reverse Bias Safe Operating Aera (RBSOA) authorizes peak currents up to 600A with DC bus voltages up to 880V making the power modules perfectly safe for 800V battery applications.


The new air-cooled module is designed for applications where liquid cooling is not an option, like aerospace electromechanical actuators and power converters, for example. This module is rated for a blocking voltage of 1200V and a Maximum Continuous Current of 340A. The On resistance is equal to 3.25mOms. Turn-on and turn-off switching energies are respectively 8.42mJ and 7.05mJ at 600V and 300A. The power module is cooled down through an AlSiC flat baseplate. Thermally robust, the module is rated for 175°C junction temperature and the gate driver for 125°C ambient temperature.


“We initially developed this IPM platform to accelerates SiC-based motor drives development for E-Mobility and we are also very pleased to see demand from aerospace customers," says Dave Hutton, CEO at CISSOID. "We are delighted to deliver this new SiC intelligent power module designed for natural convection or forced cooling in a compact and lightweight power converters addressing these new demanding markets.”


Part numbers for the new released products are CXT-PLA3SA12340AA (1200V/340A/pin fin baseplate), CXT-PLA3SA12550AA (1200V/550A/pin fin baseplate) and CMT-PLA3SB12340AA (1200V/340A/flat baseplate).

授权代理商:世强先进(深圳)科技股份有限公司
技术资料,数据手册,3D模型库,原理图,PCB封装文件,选型指南来源平台:世强硬创平台www.sekorm.com
现货商城,价格查询,交期查询,订货,现货采购,在线购买,样品申请渠道:世强硬创平台电子商城www.sekorm.com/supply/
概念,方案,设计,选型,BOM优化,FAE技术支持,样品,加工定制,测试,量产供应服务提供:世强硬创平台www.sekorm.com
集成电路,电子元件,电子材料,电气自动化,电机,仪器全品类供应:世强硬创平台www.sekorm.com
  • +1 赞 0
  • 收藏
  • 评论 1

本文由三年不鸣转载自CISSOID,原文标题为:CISSOID expands its Sic Intelligent Power Modules platform for E-Mobility and Aerospace Markets,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

评论

   |   

提交评论

全部评论(1

  • 好运常伴吾 Lv8. 研究员 2021-09-15
    学习
没有更多评论了

相关推荐

ROHM at PCIM Europe 2024: Empowering Growth, Inspiring Innovation Showcasing Highly Efficient EcoGaN™ and SiC Power Solutions

During this year’s PCIM Europe, ROHM presents its new power semiconductor solutions – with a special focus on wide bandgap devices. ROHM’s SiC, Si and GaN portfolio is designed to fulfill the needs of various sectors – focusing on e-mobility and power supply applications.

厂牌及品类    发布时间 : 2024-05-21

CISSOID推出高压SiC栅极驱动板,提供高dI/dt、高dV/dt鲁棒性 ,有效保护电源模块

CISSOID提供额定温度为 125°C (Ta) 的高压 SiC 栅极驱动板,针对 62mm 和 XM3 SiC MOSFET 功率模块进行了优化,CMT-TIT8243 用于62mm/1200V 碳化硅功率模块;CMT-TIT8244 用于62mm/1700V 碳化硅功率模块,CMT-TIT0697 用于XM3/1200V 碳化硅功率模块。

厂牌及品类    发布时间 : 2021-08-12

CISSOID Announces 3-Phase 1200V/450A SiC MOSFET Intelligent Power Module for E-mobility

Mont-Saint-Guibert, Belgium – March 5, 2020. CISSOID, the leader in high-temperature semiconductors for the most demanding markets, announces today a new 3-Phase SiC MOSFET Intelligent Power Module (IPM) platform for E-mobility. This new IPM technology offers an all-in-one solution including a 3-Phase water-cooled SiC MOSFET module with built-in gate drivers. Co-optimizing the electrical, mechanical and thermal design of the power module and its proximity control.

厂牌及品类    发布时间 : 2021-09-07

【应用】三相全桥1200V SiC MOSFET智能功率模块(IPM)助力电动汽车功率转换器设计

本文讨论了在电动汽车应用的功率转换器设计中选择CISSOID的1200V三相全桥SiC MOSFET智能功率模块(IPM)体系所带来的益处,尤其表现在该体系是一个可扩展的平台系列。该体系利用了低内耗技术,提供IPM这种已整合的解决方案。

应用方案    发布时间 : 2021-08-26

【选型】CISSOID 晶体管/功率开关/二极管/线性稳压器/电压参考/DC-DC转换器/栅极驱动和马达驱动器/模数转换器/比较器/放大器/逻辑门/定时器/时钟发生器选型指南

目录- Company profile    DISCRETE    LINEAR VOLTAGE REGULATORS    DC-DC CONVERTERS    GATE DRIVERS AND MOTOR DRIVERS    MIXED SIGNAL comparator    AMPLIFIERS    LOGIC devices    OSCULLATOR&TIMERS   

型号- CMT-OPA,CHT-PMOS300X,CHT-74021,DIODES,10-BIT ULTRA LOW POWER ADC,CMT-74021,CHT-NMOS40XX,LINEAR VOLTAG E REGULATORS,CHT-AMAZON,TIMERS,EVK-HADES®,CHT-CG50-LP,CMT-7474,ADJUSTABLE LINEAR VOLTAG E REGULATORS,CHT-NMOS4005,CHT-74132,VESUVIO®,CMT-555,AMPLIFIERS,CHT-PALLAS,EVK-THEMIS-ATLAS,CMT-RHEA,SWITC HES,HIGH-SPEED,CHT-NMOS4010,TRANSISTORS,STROMBOLI,CMT-7486,EREBUS,CHT-NEPTUNE,DC-DC CONVERTER ICS,MERCURY,EREBUS-40,CHT-CALLISTO,CHT-NILE,CHT-HYPERION,PWM CONTROLLER,CHT-SNMOS80,EREBUS®,CHT-7474,DUAL NMOS TRANSISTOR,POWER MOSFET PMOS 30V,CONVERTERS,DIODES,CHT-LDOS-XXX,CHT-FUJI,SMALL SIGNAL MOSFET TRANSISTORS,FUJI,CMT-7408,CHT-PTC8,EREBUS-50,GATE DRIVERS AND MOTOR DRIVERS: TITAN,CHT-RHEA,CMT-7400,CHT-VOLGA,CMT-7404,VENUS,CHT-7400,DC-DC CONVERTER,CHT-7486,CHT-SPMOS30,CHT-555,CHT-7404,STROMBOLI®,TRANSCEIVERS,CHT-OPA,POWER MOSFET NMOS 80V,OSCILLATOR,COMPARATORS,SATURN,LINEAR VOLTAGE REGULATORS AND VOLTAGE REFERENCES: STAR,CHT-NMOS8005,CHT-BG3M-XXX,CHT-NMOS8001,CHT-NMOS80XX,CMT-7432,CHT-ADC10,POWER SWITCHES,BRIDGE ISOLAT ED SIC GAT E DRIVER,CHT-MAGMA,DUAL SMALL SIGNAL DIODES,8-BIT PROGRAMMABLE COMPARATOR,CHT-THEMIS-ATLAS,POWER MOSFET NMOS 40V,3A DUAL DIODE,CHT-PMOS3002,CHT-7408,CHT-LDOP-XXX,CHT-NMOS8010,CMT-THEMIS-ATLAS,CHT-GANYMEDE,EARTH,CHT-PMOS3008,VESUVIO,CHT-PMOS3004,CHT-MAGMA: VERSATI LE VO LTAG E-MODE PWM CO NTROLLER,DC-DC CONVERTERS: VOLCANO,CHT-BG03M,CHT-LDNS-XXX,DUAL ISOLAT ED TRANSCEIVER,VOL1088B,CHT-MOON,CHT-CG50,CHT-NMOS4020,HIGH-PRECISION DUAL OP AMP,CHT-7432,CHT-RIGEL,YELLOWSTONE,HADES®,OSCILLATOR & TIMERS: PULSAR,CMT-74132,AMPLIFIERS: GEMSTONE,CHT-VEGA,CHT-OPAL,DC-DC CONVERTER TECHNOLOGIES,CHT-LDN-025,MARS,CHT-AMALTHEA,CHT-74-4040,CHT-RUBY

选型指南  -  CISSOID  - 05/14 PDF 英文 下载

ROHM‘s 4th Generation SiC MOSFET Bare Chips Adopted in Three EV Models of ZEEKR from Geely Integration in Traction Inverters Extends The Cruising Range and Improves Performance

ROHM has announced the adoption of power modules equipped with 4th generation SiC MOSFET bare chips for the traction inverters in three models of ZEEKR EV brand from Zhejiang Geely Holding Group (Geely), a top 10 global automaker. Since 2023, these power modules have been mass produced and shipped from HAIMOSIC (SHANGHAI) Co., Ltd. - a joint venture between ROHM and Zhenghai Group Co., Ltd. to Viridi E-Mobility Technology (Ningbo) Co., Ltd, a Tier 1 manufacturer under Geely.

产品    发布时间 : 2024-09-05

【产品】用于驱动62mm 1200V/300A SiC MOSFET模块的栅极驱动板,专业恶劣电压环境设计

CISSOID推出的CMT-TIT8243是一款栅极驱动板,针对额定温度为125°C (Ta) 的62毫米碳化硅 (SiC) MOSFET 功率模块进行了优化。该板基于CISSOID HADES 栅极驱动器芯片组,可为汽车和工业应用中的高密度电源转换器设计提供热余量。

产品    发布时间 : 2021-09-14

【产品】三相1200V/450A SiC MOSFET 智能功率模块,用于电动汽车电机驱动或电力逆变器

本文介绍了一种用于电动汽车电机驱动或电力逆变器的新型三相1200V SiC MOSFET 智能功率模块(IPM),含有栅极驱动器和三相全桥SiC MOSFET功率电路,可用于水冷功率系统,优化了功率模块的电气、机械和散热设计及其控制驱动。

新产品    发布时间 : 2021-08-08

数据手册  -  CISSOID  - Version: 1.2  - 20-Dec-23 PDF 英文 下载

CMT-PLA9869 1200V/40mOhm SiC MOSFET Datasheet

型号- CMT-PLA9869A,CMT-PLA9869,CMT-PLA9869A-TO247

数据手册  -  CISSOID  - Version: 1.1  - 14-Dec-23 PDF 英文 下载

CISSOID Releases New CXT-ICM3SA Series SiC Inverter Control Module for E-mobility

CISSOID releases its new series of SiC Inverter Control Modules dedicated to the E-mobility market. These software-powered SiC Inverter Control Modules are designed to help engineers create functionally safe, robust and modular E-motor drives while dramatically shortening time-to-market.

产品    发布时间 : 2024-03-01

The Leader in High Temperature Semiconductor Solutions High Temperature1200V/20ADual SiC MOSFET Module

型号- CHT-PLA8294A-HM8A-T,CHT-PLA3777A-HM8A-T,CHT-PLA8294A,CHT-PLAXXXXX,CHT-PLA2316A-HM8A-T,CHT-PLA2228A-HM8A-T,CHT-PLUTO-B1220,CHT-PLUTO-C1230,CHT-PLUTO-B1230,CHT-PLUTO-C1220

数据手册  -  CISSOID  - Version: 1.1  - 7-Jul-17 PDF 英文 下载

应用笔记或设计指南  -  CISSOID  - Version: 2.3  - 28-Jul-22 PDF 英文 下载

【产品】总线电压最高1200V栅极驱动板,专为驱动XM3 1200V/300A SiC MOSFET模块而设计

CMT-TIT0697 是一款栅极驱动板,针对额定温度为 125°C (Ta) 的 XM3 碳化硅 (SiC) MOSFET 功率模块进行了优化。 该板基于CISSOID HADES 栅极驱动器芯片组,可为汽车和工业应用中的高密度电源转换器设计提供热余量。

产品    发布时间 : 2021-09-17

技术文档  -  CISSOID  - September 2019 PDF 英文 下载

展开更多

电子商城

查看更多

只看有货

品牌:CISSOID

品类:功率模块

价格:¥32,635.4020

现货: 0

品牌:CISSOID

品类:功率模块

价格:¥26,174.2510

现货: 0

品牌:CISSOID

品类:功率模块

价格:¥39,096.5520

现货: 0

品牌:CISSOID

品类:MOSFET

价格:¥469.9800

现货: 0

品牌:CISSOID

品类:驱动模块

价格:¥1,975.2810

现货: 0

品牌:CISSOID

品类:驱动模块

价格:¥1,842.7110

现货: 0

品牌:CISSOID

品类:功率模块

价格:¥32,635.4020

现货: 0

品牌:CISSOID

品类:驱动模块

价格:¥1,975.2810

现货: 0

品牌:LITTELFUSE

品类:SiC MOSFET

价格:

现货: 4,395

品牌:森国科

品类:碳化硅功率场效应晶体管

价格:¥48.0000

现货: 512

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

现货市场

查看更多

品牌:CREE

品类:Silicon Carbide Power MOSFET

价格:¥30.2621

现货:287

品牌:CREE

品类:晶体管

价格:¥13.5799

现货:27

品牌:CREE

品类:Six Channel SiC MOSFET Driver

价格:¥2,765.7315

现货:3

品牌:CREE

品类:晶体管

价格:¥25.2282

现货:2

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

品牌:

品类:

价格:

现货:

服务

查看更多

功率MOSFET管检测:动静态参数/热特性/高低温性能/可靠性等参数测试

可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。

实验室地址: 西安 提交需求>

世强和原厂的技术专家将在一个工作日内解答,帮助您快速完成研发及采购。
我要提问

954668/400-830-1766(工作日 9:00-18:00)

service@sekorm.com

研发客服
商务客服
服务热线

联系我们

954668/400-830-1766(工作日 9:00-18:00)

service@sekorm.com

投诉与建议

E-mail:claim@sekorm.com

商务合作

E-mail:contact@sekorm.com

收藏
收藏当前页面