【产品】采用SOT-89封装的高电流硅NPN晶体管CXT5551HC，集电极连续电流IC为1.0A
Central Semiconductor （简称Central）公司是美国中央半导体公司，半导体产品处于世界领先水平，其运营团队提供最高水平的技术支持，出色的销售支持和优质的服务。Central公司推出的高电流硅NPN晶体管——CXT5551HC，采用SOT-89封装，采用外延平面工艺制造，环氧树脂模塑，表面贴装封装，专为高压和大电流放大器应用而设计。其产品实物图如图1所示。
图1.CXT5551HC高电流硅NPN晶体管实物图
CXT5551HC高电流硅NPN晶体管的集电极-基极击穿电压VCBO为180V，集电极-发射极电压VCEO为160V，发射极-基极电压VEBO为6.0V。另外，其工作和存储结温的范围为-65 °C~+150 °C，结壳热阻为104°C/W，具有耐高/低温的能力，适应性能强，在恶劣的环境条件下也可正常工作，这提高了其在各个电路设计中的可靠性。同时，该器件具有低漏电流，ICBO的最大值为50nA（VCB=120V，TA = 25°C），低的漏电流所造成的危害较小，从而能够较好地保护芯片不受损坏。其封装轮廓和引脚定义如图2所示。
图2.CXT5551HC高电流硅NPN晶体管封装轮廓和引脚定义图
另外，CXT5551HC高电流硅NPN晶体管的特征频率最小值fT为100MHz（VCE=10V, IC=10mA, f=100MHz），当IC=10mA, IB=1.0mA时，集电极-发射极间饱和压降VCE(SAT)最大值为0.15V。极间电容Cob最大值为15pF（VCB=10V, IE=0, f=1.0MHz）。CXT5551HC高电流硅NPN晶体管具有很好的频率特性，充放电时间短，开关损耗低。主要应用于高压和大电流放大器等领域。
CXT5551HC 高电流硅NPN晶体管的主要特点：
• 集电极-基极电压VCBO为180V
• 集电极-发射极电压VCEO为160V
• 其耗散功率PD为1.2W（TA=25℃）
• 集电极连续电流IC为1.0A
• 工作及存储结温范围为-65°C~+150°C
• 低漏电流ICBO的最大值为50nA
• 结壳热阻为104°C/W
• 采用SOT-89封装
CXT5551HC 高电流硅NPN晶体管的典型应用：
• 高压和大电流放大器
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本文由JusT翻译自Central Semiconductor，版权归世强硬创平台所有，非经授权，任何媒体、网站或个人不得转载，授权转载时须注明“来源：世强硬创平台”。
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电子商城
品牌：Central Semiconductor
品类：SURFACE MOUNT SILICON PNP TRANSISTORS
价格：
现货： 0
现货市场
服务
可定制变压器电压最高4.5KV，高频30MHz；支持平面变压器、平板变压器、OBC变压器、DCDC变压器、PLC信号变压器、3D电源、电流变压器、反激变压器、直流直流变压器、车载充电器变压器、门极驱动变压器等产品定制。
最小起订量： 100000 提交需求>
测试1.2/50us-8/20us组合波，10/700us-5/320us组合波，8/20us单波。能够模拟雷电瞬变引起的浪涌冲击抗干扰测试，最高电压达20KV，电流达20KA。点击预约，支持到场/视频直播测试，资深专家全程指导。
实验室地址： 深圳/上海 提交需求>
授权代理品牌：集成电路
授权代理品牌：分立元件
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