【IC】 爱仕特新款高可靠汽车级碳化硅功率模块DCS12,封装一次铸造成型,为高速发展的新能源汽车注入动力
深圳爱仕特科技有限公司推出新款汽车级碳化硅功率模块DCS12,旨在缩小半导体器件使用尺寸的同时,提高逆变器功率密度、可靠性、耐用性以及寿命周期,给高速发展的新能源汽车注入动力。
爱仕特DCS12模块
DCS12模块优化水道结构设计,在提升散热效率降低热阻的同时,提升系统可靠性。通过分区散热和对水流的精准控制,避免了整体温差梯度过大的问题,实现直接水冷以降低系统热阻。另外,这种并联的水道设计使得芯片均匀冷却无温差,利于并联的芯片中电流均匀分布,可靠性进一步提升。
爱仕特DCS12模块水冷散热模拟图
DCS12的封装是一次铸造成型,其密封保护可以确保逆变器在机械冲击和潮湿环境下仍然可实现稳定可靠的性能,允许极限温度循环以及更高的结温来提升功率密度。其结构紧凑,利于降低模块的杂散电感,进而降低系统杂散电感,并充分利用SiC器件的高速开关特性,以降低电压过冲的影响。此外,银烧结与铜绑定技术的结合,解决了普通绑定工艺可靠性问题,在不降低电流的情况下实现更高结温下运行,功率循环能力得到提升。
DSC12作为爱仕特新一代汽车级功率模块,拥有良好的散热性能、优异的可靠性以及优化的杂散电感水平,同时采用半桥的结构设计也为驱动器的设计带来了比较大的灵活性,可以把驱动器与电机更好的集成在一起。
爱仕特DCS12模块产品阵容
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本文由ll转载自深圳爱仕特科技有限公司公众号,原文标题为:爱仕特推出应用于新能源汽车的新一代碳化硅功率模块DCS12,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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
泰科天润(GPT)SiC碳化硅芯片/SiC碳化硅二极管选型指南
目录- Company Profile SiC Chip/SiC Devices
型号- G3S06506D,GW3-S12050,G5S06505DT,G3S06506C,G3S06506A,G4S06508HT,G3S06550A,G5S12020B,G3S17020PP,G3S06510C,G3S06510D,G5S12020A,G3S12020A,G3S06506H,G3S06510A,G4S12020D,G3S12020B,GW1-S3300.6,G3S06510B,G5S12015P,GW3-S065100,G3S06505R,G3S06004J,G3S12003R,G5S06508AT,G5S06504AT,G5S06505CT,G3S06505C,G4S06515HT,G3S06505D,G5S12015A,G3S06505A,G3S12003A,G5S06510HT,G4S06515PT,G3S12003C,G5S12015L,G3S06505H,G3S12003H,G3S06504R,G5S06510PT,G3S06520L,G3S06520H,G5S12002R,GAS06540B,G3S06560B,G3506008J,G3S12002R,G3S06520P,G3S06504C,G3S06504A,G5S06508HT,G3S06516B,G5S06504HT,G3S12002A,G4S06515QT,G3S12002C,G3S06504H,G3S06520B,G3S12002D,G5S12010A,G5S06508PT,G3S06520A,G3S06504D,G3S12002H,G3S06503R,GWA-S06520,G3S06540PP,G3S065100P,G5S06506CT,G4S06508AT,GW3-S17050,G5S06505AT,G3S06503A,GW3-S12020,G3S12040PP,G5S06508QT,G3S06503H,G5S06504QT,G4S06510HT,G3S06503C,G3S06503D,G3S06530L,G5S12020H,GW3-S06550,G4S06510PT,G4S06515AT,G5S12020P,G5S06506DT,G3S06530P,G3S06502R,GW5-S12010,G3S06502A,G4S06510AT,GW3-S12010,G5S06505HT,G3S06502H,G3S17010A,GW5-S12015,G3S06530A,G3S06502D,G3S12040B,G3S06502C,GW3-S06520,G4S06510QT,G4S06508CT,G5S12008A,G5S06506AT,G3S17005P,GW3-S17010,GW5-S12002,G5S06510DT,G4S06515DT,GW3-S12002,GW3-S12003,GW3-S12005,GAS06520A,G3S17005C,GW5-S12008,G3S17005A,G3S12010H,GAS06520H,G3S06508R,G5S12010P,GAS06520D,G3S12010M,G3S17020B,GW3-S06530,G4S06508DT,G3S12010P,GAS06520P,G3S12010R,G3S12050P,GAS06520L,GW3-S33050,G4S06510CT,G5S06506HT,G5S06510AT,G3S06508D,GW3-S17005,G3S06508C,G5S12002C,G3S06508A,G5S12002A,G3S12030PP,G3S06540B,G5S12030B,G3S12010A,G3S12010B,G3S12010C,G3S12010D,G3S06508H,G3S06512B,GW1-S33001,GW1-S33002,G5S06510QT,G3S12005P,GW1-S33005,G3S06006J,G3S12005R,GW3-S06506,GW3-S06508,GW3-S06502,G3S06010J,GW3-S06503,GW3-S06504,G5S06508CT,GW3-S06505,GW5-S12020,G4S06510DT,G3S12005A,G3S17050P,G3S12005C,G3S12005D,G3S12005H,G3S06510M,GW3-S06510,G3S06506U,G3S06506R,G3S06510K,G3S06510L,G3S12020L,G3S06510H,G3S17010B,G3S17010P,G3S12020P,G3S06550P,G3S06510R,G5S06508DT,G3S06510P,G3S12020U
【元件】瑞之辰推出首款SiC MOSFET PIM模块,可替代硅基IGBT芯片的模块,系统损耗降低三分之一
又有一家国内企业在车规级SiC技术的研发和应用方面实现了新的突破。深圳市瑞之辰科技有限公司推出了首款基于SiC MOSFET技术的PIM模块,实现了对硅基IGBT芯片的模块替代,在系统损耗方面降低了三分之一。与此同时,这款产品在技术上突破传统PIM模块灌封封装模式,模块体积减少约57%,而且使用了瑞之辰自主研发的10项工艺创新,模块可靠性得到大幅提升,非常适用于新能源汽车、充电桩、储能等新兴领域。
产品 发布时间 : 2024-11-01
阿基米德半导体(Archimedes)IGBT分立器件/功率模块选型指南
型号- AMGO75B65FPH3RB,ADH040N12HT5,AMG006L12P2C3RB,ADG075N65CT5,AMG006L12P2C3RA,ADG040N65HT5,AMG225L12L1H3RB,ADH075N12MT7,AMG375L65L1S5RC,AMG150L70P2H3RA,AMG200L12L1H3RA,AMG200L12L1H3RB,AMG100L65P2H3RB,AMG225L65F2S5RC,AMG950H75H1H3RA,ADG100N12BT7,AMG100L65P2H3RA,AMG200H12S1M3RA,AMG080L12F1H3RA,ADG050N12AT7,AMG450L65P4S5RE,ADH075N65FT5,AMG450L65P4S5FC,AMG400L12P4H3RA,AMG400L12P4H3RB,AMG300H12S1M3RA,ADG075N70CT5,ADG060N65BT5,AMG450L65P4S5RD,AMG450L65P4S5RC,AMG150L12L1H3RA,ADG050N65CT5,AMG225L65P4S5RC,ADG075N65FT5,AMG300H12E1M3RA,AMG300L12P4H3RA,ADG150N65FT7,ADG075N65BT5,ADG050N65KT5,AMG820H75H1H3RA,ADG100N65FT7,AMG600H12E1M3RA,AMG450H12E1M3RB,AMG300L65F2S5RC,AMG300L65F2S5RA,AMG300L65F2S5RB,AMG600H75H1H3RA,ADG100N12MT7,AMG150L65P2H3RB,ADG075N12MT7,AMG150L65P2H3RA,AMG600H12E1M3RB,ADG040N12HT5,ADG050N12HT7,AMGO80L12F0H3RA,AMG080L12F0H3RB,AMG450L65F2S5RC,AMG450L65F2S5RB,ADG040N12AT5,ADS080N12GT8,AMG300L65P4S5RC,AMG600H12S1M3RA,AMG160L12F1H3RB,AMG160L12F1H3RA,AMG450H12E1L3RA,AMG900H12E1M3RA,AMG375L65P4S5RC,AMG600H12H1H3RA,ADS040N12GT8,AMG450H12S1M3RA,AMG160L12F2H3RB,AMG160L12F2H3RA
秒懂半导体封装技术——银烧结技术
银烧结技术,一种在300℃以下实现高可靠性连接的低温技术,正成为功率模块封装领域的焦点。该技术通过银颗粒间原子扩散实现互连,提供优异的导电和导热性能,满足高温应用需求。银烧结技术环保无铅,但面临设备和材料成本较高的挑战。随着技术优化,其在汽车电子、航空航天等领域有广泛应用前景。
技术探讨 发布时间 : 2024-09-06
【应用】芯洲科技为智能座舱/ADAS/OBC提供车规级电源管理芯片,轻松解决EMI及过流保护等痛点问题
芯洲科技近期上线10多款车规电源芯片产品:LDO、降压变换器、升压/升降压/反激控制器、MOS管驱动、功率保护器件、集成PMIC产品等。为智能座舱/ADAS域应用、车载动力域、车身域等各类车载应用提供全方位的电源解决方案。
应用方案 发布时间 : 2023-08-04
车规级SiC功率模块封装技术及其发展趋势
当前车规级功率器件的封装设计朝着高功率密度、 高工作效率、低热阻、低寄生参数、高绝缘能力和高集成度等方向发展,分析各封装设计手段对器件特性的影响,寻求针对特定需求的电学、热学和机 械等特征参数的最佳平衡,以满足不同应用场景, 适应高标准的发展需求,从不同角度综合考虑,达到多维度优化的最佳效果。本文阿基米德半导体来给大家分享车规级SiC功率模块封装技术及其发展趋势。
技术探讨 发布时间 : 2024-10-25
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