New 2Gb/4Gb/8Gb LPDDR4 SDRAMs with on-chip ECC Offer lower Power Consumption
ALLIANCE Memory has expanded its offering of high-speed CMOS mobile low-power SDRAMs with new LPDDR4 devices featuring on-chip ECC. For improved performance with higher power efficiency than previous-generation LPDDR3 SDRAMs, the 2Gb AS4C128M16MD4-062BAN, 4Gb AS4C256M16MD4-062BAN and AS4C128M32MD4-062BAN, and 8Gb AS4C256M32MD4-062BAN offer lower power consumption and faster speeds in the 200-ball FBGA package.
Compared to previous-generation LPDDR3 SDRAMs, Alliance Memory’s new 2Gb, 4Gb, and 8Gb LPDDR4 devices with on-chip ECC offer lower power consumption to increase battery life in portable electronics for the consumer and industrial markets, including tablets, wearables, handheld gaming consoles, personal navigation systems, and more. Providing increased efficiency for advanced audio and high-resolution video in embedded applications, the AS4C128M16MD4-062BAN, AS4C256M16MD4-062BAN, AS4C128M32MD4-062BAN, and AS4C256M32MD4-062BAN deliver fast clock speeds of 1.6GHz for extremely high transfer rates of 3.2Gbps. For automotive applications — including infotainment and ADAS systems — the AEC-Q100 qualified devices operate over a temperature range of -40°C to +105°C.
With minimal die shrinks, Alliance Memory’s LPDDR4 SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for numerous similar solutions in high-bandwidth, high-performance memory system applications — eliminating the need for costly redesigns and part requalification.
Parts Table:
Key Specifications and Benefits:
On-chip ECC
AEC-Q100 qualified
Low-voltage operation of 1.1V/1.8V
Fast clock speeds of 1.6GHz
Extremely high transfer rates of 3.2Gbps
Automotive A2 Grade, temperature range -40°C to +105°C
Eight internal banks per channel
x32 for 2-channels per device (AS4C128M32MD4, AS4C256M32MD4)
x16 for 1-channel per device (AS4C128M16MD4, AS4C256M16MD4)
Programmable read and write latencies
Programmable and on-the-fly burst lengths (16 and 32)
Selectable output drive strength
On-chip temperature sensor to control self-refresh rate
Offered in the 200-ball FBGA package
Target Applications:
5G, AI, and IoT
Portable electronics for the consumer and industrial markets
Automotive infotainment and ADAS systems
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本文由青莲居士转载自Alliance,原文标题为:New 2Gb, 4Gb, and 8Gb LPDDR4 SDRAMs,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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型号- AS4C8M16SA-7TXN,AS6C2008A,AS6C62256-55SXN,ASFC64G31T5-51BIN,AS4C8M32MD2A-25BPCN,AS4C64M32MD2A-25BIN,AS5F18G04SND-10LIN,AS1C512K16P-70BIN,AS4C8M32MSB-6BIN,AS7C38096B-10BIN,ASFC32G31T3-51BIN,AS29CF160B-55TIN,AS4C16M16SA-6TXN,AS7C31025C-12JIN,AS7C31024B-XXTCN,M29F160FT55N3E2,AS4C64M16MD2A-25BIN,AS4C32M16MSB-6BIN,M29F800FT55N3E2,AS25F1128MQ-70WIN,AS7C1024B-XXJCN,AS5F34G04SNDB-08LIN,AS29CF800T-55TIN,AS4C8M16SA-6BXN,AS4C4M16SA-6TXN,AS9F38G08SA-25BIN,N25Q064A13ESFA0F,AS25F364MQ-10WIN,AS9F31G08SA-25BIN,AS4C32M8D1-5TXN,AS4C64M4SA-6 TXN,AS4C256M16D4-83BXN,AS7C31025B-XXJIN,AS4C8M16SA-6 TXN,AS1C1M16P-70BIN,AS4C8M16SA-7 BXN,AS25F34MD-10S1IN,AS6C6416-55TIN,AS4C128M8D2A-25BXN,AS6C2008A-55TIN,AS4C2M32S-7BXN,AS4C512M16D3LC-12BXN,AS4C2M32SA-7 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