EPC Introduces a 12V – 48V 500W GaN Boost Converter Demonstration, Offering Superior Efficiency and Power Density
EPC announces the availability of the EPC9166, a 500W DC-DC demo board that converts a 12V input to 48V output. The EPC9166 demo board demonstrates the Renesas ISL81807 80V two-phase synchronous boost controller with the latest generation EPC2218 eGaN FETs from EPC to achieve greater than 96.5% efficiency in a 12V input to 48V regulated output conversion with 500kHz switching frequency. The output voltage can be configured to 36V, 48V, and 60V. The board can deliver 480W power without a heatsink.
Regulated DC-DC boost converters are widely used in data center, computing, and automotive applications, converting a nominal 12V to a 48V distribution bus among other output voltages. The main trend has been towards higher power density.
eGaN® FETs provide the fast switching, high efficiency and small size that can meet the stringent power density requirements of these leading-edge applications. EPC2218 is the smallest and highest efficiency 100V FET in the market. The ISL81807 is the industry's first 80V dual-output/two-phase (single output) synchronous buck controller with integrated GaN driver, supporting frequencies up to 2MHz. The ISL81807 uses current mode control and generates two independent outputs or one output with two interleaved phases. It supports current sharing, synchronization for paralleling more controllers/more phases, enhanced light load efficiency and low shutdown current. ISL81807 directly drives EPC GaN FETs, ensuring easy design, low component count and solution cost.
Alex Lidow, CEO of EPC commented,“The Renesas controller IC makes using GaN even easier. We are delighted to work with Renesas to combine the benefits of their advanced controllers with the performance of GaN to provide customers with a low component count solution that increases efficiency, increases power density, and reduces system cost.”
“The Renesas ISL81807 is designed to fully exploit the high performance of GaN FETs for high power density solutions”said Andrew Cowell, Vice President of the Mobility, Industrial and Infrastructure Power Division at Renesas.“ISL81807 reduces BOM cost for GaN solutions because it does not require an MCU, current sense op amp, external driver or bias power. It is also fully protected and integrates the GaN drivers. With the ISL81807, designing with GaN FETs is as simple as designing with silicon-based FETs.”
- |
- +1 赞 0
- 收藏
- 评论 0
本文由董慧转载自EPC,原文标题为:EPC Introduces a 12 V – 48 V 500 W GaN Boost Converter Demonstration with Same BOM Size as Silicon, Offering Superior Efficiency and Power Density,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
eGaN FETs Are Low EMI Solutions!
GaN FETs can switch significantly faster than Si MOSFETs causing many system designers to ask − how does higher switching speeds impact EMI? In this blog, EPC discusses simple mitigation techniques for consideration when designing switching converter systems using eGaN® FETs and will show why GaN FETs generate less EMI than MOSFETs, despite their fast-switching speeds.
新产品 发布时间 : 2020-08-15
Lidar Demonstration Board Drives Lasers with Currents up to 220A with Under 3-ns Pulses Using eGaN FETs
March 2021 — Efficient Power Conversion (EPC) announces the availability of the EPC9150, a 200V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs provide power pulses to drive the laser diodes, VCSELs or LEDs up to ten times faster than an equivalent MOSFET.
新产品 发布时间 : 2021-04-17
EPC Introduces EPC9157 48V to 12V Demo Board Featuring EPC eGaN FETs and New Renesas DC-DC Controller
February, 2021 — EPC announces the availability of the EPC9157, a 300W DC-DC demo board in the tiny 1/16th brick size, measuring just 33mm×22.9mm×9mm (1.3×0.9×0.35 in). The EPC9157 demo board integrates the Renesas ISL81806 80V dual synchronous buck controller with the latest-generation EPC2218 eGaN FETs from EPC to achieve greater than 95% efficiency for 48V input to 12V regulated output conversion at 25A.
新产品 发布时间 : 2021-03-08
EPC(宜普)eGaN® 氮化镓晶体管(GaN FET)和集成电路及开发板/演示板/评估套件选型指南
目录- eGaN FETs and ICs eGaN® Integrated Circuits Half-Bridge Development Boards DrGaN DC-DC Conversion Lidar/Motor Drive AC/DC Conversion
型号- EPC2212,EPC2214,EPC2059,EPC2216,EPC2215,EPC2218,EPC2016C,EPC2050,EPC2052,EPC2051,EPC2054,EPC2053,EPC2055,EPC9086,EPC2218A,EPC90153,EPC9087,EPC90154,EPC2069,EPC2102,EPC2101,EPC2104,EPC2103,EPC2106,EPC2105,EPC2107,EPC9018,EPC2065,EPC90151,EPC90152,EPC21702,EPC2100,EPC2067,EPC2221,EPC21701,EPC2066,EPC90150,EPC9097,EPC90145,EPC90142,EPC9098,EPC90143,EPC9099,EPC9092,EPC90148,EPC90149,EPC90146,EPC9094,EPC90147,EPC2219,EPC9091,EPC2619,EPC2036,EPC2035,EPC2038,EPC2037,EPC2014C,EPC2039,EPC9507,EPC2030,EPC9067,EPC2032,EPC2031,EPC9068,EPC2152,EPC2033,EPC9063,EPC9186,EPC9066,EPC8010,EPC9180,EPC2204A,EPC9181,EPC9061,EPC2308,EPC2307,EPC9005C,UP1966E,EPC2203,EPC9004C,EPC2202,EPC2204,EPC2015C,EPC2207,EPC2206,EPC2040,EPC2045,EPC2044,EPC9194,EPC2012C,EPC2019,EPC9049,EPC9203,EPC9204,EPC9205,EPC2252,EPC9166,EPC9167,EPC9047,EPC9201,EPC9041,EPC9162,EPC9163,EPC9165,EPC7020,EPC9160,EPC9040,EPC2024,EPC8009,EPC2302,EPC2001C,EPC2029,EPC2304,EPC2306,EPC2305,EPC8002,EPC2021,EPC9177,EPC2020,EPC9057,EPC9167HC,EPC2023,EPC9179,EPC9058,EPC8004,EPC2022,EPC9059,EPC9173,EPC9174,EPC9055,EPC9176,EPC9170,EPC9050,EPC9171,EPC9172,EPC2010C,EPC2034C,EPC7007,EPC7002,EPC9148,EPC2071,EPC7001,EPC23101,EPC23102,EPC23103,EPC9144,EPC90140,EPC23104,EPC2111,EPC7004,EPC2110,EPC7003,EPC90133,EPC90132,EPC9022,EPC9143,EPC90137,EPC90138,EPC90135,EPC90139,EPC7019,EPC7018,EPC9038,EPC9159,EPC9039,EPC2007C,EPC21603,EPC9156,EPC9036,EPC9157,EPC9037,EPC2088,EPC7014,EPC21601,EPC9158,EPC90122,EPC9151,EPC9031,EPC90123,EPC90120,EPC9153,EPC9033,EPC90121,EPC9154,EPC90124,EPC9150,EPC90128
Enhancement-Mode Gallium Nitride Technology
型号- EPC2212,N/A,EPC2214,EPC2059,EPC2216,EPC2215,EPC2218,EPC2050,EPC9126,EPC2052,EPC2051,EPC2054,EPC2053,EPC2055,EPC9086,EPC2218A,EPC90153,EPC2102,EPC2101,EPC2104,EPC2103,EPC2106,EPC2105,EPC2107,EPC2065,EPC90151,EPC90152,EPC2100,EPC2067,EPC21701,EPC2221,EPC2066,EPC90150,EPC9097,EPC90145,EPC90142,EPC9098,EPC90143,EPC9099,EPC9092,EPC90148,EPC90149,EPC90146,EPC9094,EPC90147,EPC2219,EPC9091,EPC2619,EPC2036,EPC2035,EPC2038,EPC2037,EPC2014C,EPC9507,EPC2031,EPC2152,EPC9063,EPC9126HC,EPC2204A,EPC9061,EPC2308,EPC2307,EPC9005C,UP1966E,EPC2203,EPC9004C,EPC2204,EPC2207,EPC2206,EPC2044,EPC2012C,EPC9049,EPC2252,EPC9166,EPC9167,EPC9041,EPC9162,EPC9165,EPC7020,EPC9160,EPC9040,EPC2302,EPC2001C,EPC2304,EPC2306,EPC2305,EPC8002,EPC9177,EPC9167HC,EPC9179,EPC9173,EPC9174,EPC9055,EPC9050,EPC9171,EPC9172,EPC7007,EPC2034C,EPC7002,EPC9148,EPC23101,EPC2071,EPC7001,EPC23102,EPC23103,EPC9144,EPC23104,EPC90140,EPC2111,EPC7004,EPC7003,EPC90132,EPC9022,EPC90137,EPC90138,EPC90135,EPC7019,EPC7018,EPC9038,EPC9039,EPC21603,EPC9156,EPC9036,EPC9157,EPC9037,EPC21601,EPC2088,EPC7014,EPC90122,EPC90123,EPC90120,EPC9153,EPC90121,EPC9154,EPC90124,EPC9150,EPC90128
BRC Solar Selects EPC 100V eGaN FETs for Next Generation Solar Optimizer
Designing EPC‘s EPC2218 100V FETs into BRC Solar GmbH‘s next generation M500/14 power optimizer has enabled a higher current density due to the low power dissipation and the small size of the GaN FET making the critical load circuit more compact.
应用方案 发布时间 : 2022-08-26
How to Design a 12V-to-60V Boost Converter with Low Temperature Rise Using eGaN FETs
This Talk EPC will examine the design of a 12V to 60V, 50W DC/DC power module with low temperature rise using eGaN FETs in the simple and low-cost synchronous boost topology.
设计经验 发布时间 : 2021-11-01
The Growing Ecosystem for eGaN®FET Power Conversion
型号- EPC2036,EPC2101,EPC2001C,LMG5200,FBS-GAM02-P-R50,EPC2106,EPC2016C,EPC9144,EPC2152,EPC2045,EPC2111,EPC8010,EPC9081,FBS-GAM01P-C-PSE,FBS-GAM02P-C-PSE
GaN Power Devices Achieve a High-Efficiency 48V, 1.2kW LLC Resonant Converter in a ⅛th Brick Size
EPC designed a 1.2kW resonant converter demo board (EPC9174) in an 1/8th brick form factor that achieves an impressive 97.3% peak efficiency.
原厂动态 发布时间 : 2022-07-27
【应用】基于eGaN FETs的150W/8Ω D类音频放大器应用案例
与MOSFETs相比,eGaN FETs的特性将使系统性能得到改善,显着提高了D类放大器的整体声音性能。EPC公司推出的EPC2016是高开关速度增强型GaN(eGaN)FET,与MOSFET相比具有更低的传导损耗,更快的开关速度和零反向恢复损耗,其应用于D类音频放大器时具有超高的音质和更高的经济效益。
应用方案 发布时间 : 2018-06-06
Design High-Performance Class-D Audio Amplifiers with EPC’s New Reference Design EPC9192 and eGaN FETs
EPC is pleased to announce the launch of the EPC9192, reference design enabling powerful, compact, and efficient Class-D audio amplifiers. The EPC9192 showcases the capabilities of EPC‘s 200 V, EPC2307, eGaN FETs in a ground-referenced, split dual supply Single-Ended (SE) design.
应用方案 发布时间 : 2024-04-12
电子商城
服务
满足150W内适配器、PD快充、氮化镓快充等主流产品测试需要;并可查看被测开关电源支持协议,诱导多种充电协议输出,结合电子负载和示波器进行高精度测试。测试浪涌电流最大40A。支持到场/视频直播测试,资深专家全程指导。
实验室地址: 深圳 提交需求>
登录 | 立即注册
提交评论