【产品】P153FP6SNK、P211FZ4QMKA紧凑型功率MOSFET，适用于负载/电源开关、电源转换器电路等

时间： 2019-04-13 来源：SHINDENGEN

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紧凑型功率MOSFET,SMD封装功率MOSFET,薄型功率MOSFET,P211FZ4QMKA

P153FP6SNK、P211FZ4QMKA是新电元推出的两款功率MOSFET，允许大电流，薄型SMD封装，均符合ROHS无铅标准，是环境友好型器件，两款产品的阈值电压典型值分别为3V、4V，静态漏源导通电阻典型值分别为2.4mΩ、1.1mΩ，导通损耗很低，有助于降低MOSFET通过大电流时的自身发热，同时提高电源效率。主要应用于负载/电源开关、电源转换器电路、DC-DC转换器、电源管理等领域。

图1 P153FP6SNK功率MOSFET外观图、电路图

图2 P153FP6SNK功率MOSFET尺寸图

图3 P211FZ4QMKA功率MOSFET外观图、电路图

图4 P211FZ4QMKA功率MOSFET尺寸图

P153FP6SNK、P211FZ4QMKA两款产品的存储温度范围均为-55℃~175℃，沟道温度范围均为175℃，具有出色的耐高温、低温性能和极强的环境适应能力，为恶劣环境下工作提供了可靠保障。同时热阻R_th(j-c)最大值均为0.84℃/W ，散热较快，可保障MOSFET长时间工作的稳定性，确保使用寿命。

P153FP6SNK、P211FZ4QMKA的漏源电压分别为60V、40V，连续漏极电流分别为153A、211A，单脉冲雪崩电流分别为57A、82A，可有效抑制雪崩效应，可靠性高，安全性好。功耗均为178W，功耗较低。同时，P153FP6SNK、P211FZ4QMKA具有低电容特性，其输入电容典型值为5850pF、8550pF，工程师可根据不同的需求进行选择；此外，两款产品开启延迟典型值分别为10ns、13ns，关断延迟典型值分别为56ns、85ns，具有更快的开关速度，可以满足一般高频开关电路设计需求。

P153FP6SNK、P211FZ4QMKA功率MOSFET主要特性：

•符合ROHS无铅标准

•存储温度范围均为-55℃~175℃

•沟道温度范围均为175℃

•热阻R_th(j-c)最大值均为0.84℃/W

•低R_DS(ON）

P153FP6SNK、P211FZ4QMKA功率MOSFET主要应用领域：

•负载/电源开关

•电源转换器电路

•DC-DC转换器

•电源管理

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APPLICATIONS,BATTERY MANAGEMENT SYSTEM,HIGH SIDE NMOSFET,DSC,DDR SDRAM,INDUSTRIAL APPLICATIONS,CAR AUDIO,AUTOMOTIVE,LCD PANELS

2022/8/3 - 选型指南 - Edition 2022 代理服务技术支持采购服务

【元件】瞻芯电子TC3Pak顶部散热封装SiC MOSFET，高频开关、低损耗，助力高效高密电源设计

为了满足高密度的功率变换的需求，瞻芯电子推出2款新型TC3Pak（Topside Cooling D3Pak）顶部散热型、表面贴封装1200V碳化硅（SiC）MOSFET产品，具有低损耗、散热性强等特点，让系统设计更紧凑、更高效，组装时能自动化生产。

2024-11-26 - 产品代理服务技术支持采购服务

AER010N04S N沟道SMD功率MOSFET

本资料详细介绍了AER010N04S型N通道SMD功率MOSFET的产品特性、电气特性、封装信息以及应用领域。该产品具有高导通电阻、快速开关速度、可靠耐用等特点，适用于DC-DC转换器、开关电源和刷式直流电机控制等应用。

安邦 - N沟道SMD功率MOSFET,N-CHANNEL SMD POWER MOSFET,AER010N04S,DC-TO-DC CONVERTERS,BRUSHLESS DC MOTOR CONTROL,开关模式电源,无刷直流电机控制,SWITCH MODE POWER SUPPLY,DC-DC转换器

2024/5/15 - 数据手册 - Revision:B 代理服务技术支持采购服务

PTN03N120 30V/112A N沟道高级功率MOSFET

本资料详细介绍了PTN03N120这款30V/112A N-Channel Advanced Power MOSFET的特性、应用领域和订购信息。该器件具有低RDS(on)@4.5V逻辑、5V逻辑电平控制和PDFN5X6 SMD封装，适用于高侧负载开关、电池开关等场景。

金誉半导体 - N-CHANNEL ADVANCED POWER MOSFET,N沟道高级功率MOSFET,PTN03N120,AEROMODELLING,BRUSHLESS MOTOR,便携式产品,电力银行,HIGH SIDE LOAD SWITCH,POWER MANAGEMENT APPLICATIONS,POWER BANK,无刷电机,PORTABLE PRODUCTS,蓄电池开关,高边负载开关,主电路板,BATTERY SWITCH,MAIN BOARD,电源管理应用,航空模型

2022/12 - 数据手册 - V2.0 代理服务技术支持采购服务

【产品】QFN5×6薄型封装的N沟道功率MOSFET DI008N10PQ，漏极峰值电流高达20A

Diotec推出型号为DI008N10PQ的N沟道功率MOSFET，器件采用QFN5x6薄型封装，具有低导通电阻和开关速度快等特点，产品适用于DC/DC转换器，电源，直流驱动器，电动工具，同步整流器以及工业和商业级应用等领域。

2022-05-26 - 产品代理服务技术支持采购服务

CPC3981Z–N沟道耗尽型MOSFET

CPC3981Z是一款800V耐压的N沟道耗尽型MOSFET，采用SOT-223-2L封装，具有最小3.3mm的爬电距离。该器件在无电源时提供闭合开关功能，适用于电路启动或断电等场景。其主要优点包括易于热管理、紧凑的宽输入电压电源布局、简化的隔离管理和较低的功耗。CPC3981Z具有独特的800V击穿电压、小型的1.8W功率封装、超过3.3mm的漏极-源极爬电距离、低RDS(on)max（25℃时为45Ω）和低VGS(off)（-1.4V至-3.1V）。该器件适用于通常开关闭合、固态继电器、辅助电源、电信、电源和电流调节器等市场和应用。

LITTELFUSE - N沟道耗尽型MOSFET,NIQUE 800V BLOCKING VOLTAGE N-CHANNEL DEPLETION MODE MOSFET,N-CHANNEL DEPLETION MODE MOSFET,NIQUE 800V阻断电压N沟道耗尽型MOSFET,CPC3981Z,SOLID-STATE RELAYS,NORMALLY ON SWITCHES,AUX POWER SUPPLIES,POWER SUPPLIES,固态继电器,CURRENT REGULATORS,电源,通常在开关上,无线通讯,TELECOMMUNICATIONS,电流调节器,辅助电源

2023/9/5 - 商品及供应商介绍代理服务技术支持采购服务

【应用】采用eGaN®FET设计紧凑型48V转12V/900W的LLC谐振转换器，效率超98％

LLC谐振转换器是提供高功率密度和高效率解决方案的首选。具有超低导通电阻和寄生电容的eGaN FET可以显着降低损耗，这有利于LLC谐振转换器的设计，而硅基MOSFET很难做到。本文展示了基于EPC的eGaN FET（例如EPC2053和EPC2024）设计的48V转12V/900W/1 MHz的LLC DC-DC变压（DCX）转换器。

2020-07-09 - 应用方案代理服务技术支持采购服务

【产品】400V，9A的高压N沟道功率MOSFET，大功率电路设计首选

新电元的P9B40HP2是一款SMD封装的N沟道功率MOSFET，兼具小尺寸、低噪音等优点，其结壳热阻θjc最大值仅为3.12℃/W，可用于开关电路、驱动器、逆变器等电子电路中。

2018-03-08 - 新产品代理服务技术支持采购服务

CWS5N65A 650V N沟道超级结功率MOSFET

本资料介绍了Xinyuan半导体生产的CWS5N65A型号650V N-Channel Super Junction功率MOSFET。该器件采用超结技术，具有低导通电阻和高开关速度的特点，适用于高效能、紧凑型应用的电源管理电路。

武汉芯源 - N沟道超结功率MOSFET,N-CHANNEL SUPER JUNCTION POWER MOSFET,SJ MOSFET,SJ-MOSFET,CWS5N65AT,CWS5N65AD,CWS5N65A,CWS5N65AF,CWS5N65ADR,高性能适配器,SWITCHED MODE POWER SUPPLIES,开关模式电源,UNINTERRUPTIBLE POWER SUPPLY,POWER FACTOR CORRECTION,LED LIGHTING POWER,LED LIGHTING,PFC,LED照明,全氟化碳,功率因素矫正,不间断电源,UPS,HIGH PERFORMANCE ADAPTER,SMPS,LED照明电源

2019/10/24 - 数据手册 - Rev 1.20 代理服务技术支持采购服务