ROHM Presents High-Performance Solutions for the E-Mobility Sector, Energy Conversion and Beyond
At PCIM Europe, the leading trade fair for Power Electronics, Intelligent Motion, and Energy Management in Nuremberg, Germany (May 9th to 11th), ROHM Semiconductor will showcase its new power semiconductors that advance sustainable technologies – including high-performance solutions for the e-mobility sector and beyond.
ROHM booth 310, hall 9
The importance of semiconductor and electronic components – ROHM’s core products – is increasing, especially with regard to achieving a decarbonized society, which is a pressing issue to secure the future for the generations to come. At PCIM, ROHM presents cutting-edge solutions for the key technologies of our time – revolving around energy-saving, miniaturization, functional safety, innovation, and sustainability. Under its statement “Powering up with ROHM” the company demonstrates how it solves social and ecological challenges through its high-quality technologies.
ROHM’s product highlights at its booth 310 in hall 9 include:
• 4th Gen. SiC MOSFET: ROHM's cutting-edge SiC MOSFET technology realized industry-leading low ON resistance, minimizing switching losses and supporting 15V and 18V gate-source voltage. It contributes to dramatic miniaturization and low power consumption in various applications including automotive inverters and switching power supplies.
• New molded SiC power modules: ROHM expands its package portfolio with “HSDIP20” and “DOT247”, installing the latest 4th Gen. SiC MOSFET 750V and 1200V devices in different RDS_on. Both achieve up to 30kW power application depending on their conditions.
• gate drivers: The BM611x series is a 3.75KV isolation, AEC-Q100 certified gate driver device specially designed for xEV traction inverter application. The product family has a new member: BM6112 is designed for high-power IGBT and SiC applications with a unique gate current of 20A.
• intelligent low side power devices (IPD): The BV1LExxxEFJ-C and BM2LExxxFJ-C series are a new generation of AEC-Q100 qualified 1-channel and 2-channel 40 V smart low-side switches ideally designed for automotive and industrial applications.
• 730V integrated fly back converters: The BM2P06xMF IC series integrates a 730 V Si MOSFET and a PWM controller in one package and is ideal for industrial auxiliary power supply and SMPS applications.
• Built-in 1700V SiC MOSFET: BM2SC12xFP2-LBZ series is a quasi-resonant AC/DC converter that provides an optimum system for all products with an electrical outlet.
• 150V GaN HEMT: ROHM's 150V GaN HEMT GNE10xxTB are optimized for power supply circuits in industrial and communication equipment for the industry's highest (8V) gate breakdown voltage technology.
On top, ROHM will exhibit enhancements to its IGBT and GaN product portfolio at the PCIM 2023 fair.
ROHM representatives will participate in panel discussions, conference presentations and hold presentations at the ROHM booth. Additionally, ROHM’s experts will hold poster sessions at the PCIM Europe conference.
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本文由玄子转载自ROHM News,原文标题为:ROHM Presents High-Performance Solutions for the E-Mobility Sector, Energy Conversion and Beyond,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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罗姆通过进一步改进自有的双沟槽结构,使第4代SiC MOSFET具有低导通电阻、优秀的短路耐受时间、低寄生电容、低开关损耗等优点。凭借高性能元器件以及丰富的支持工具,罗姆将助力设计人员为未来的电力电子系统创建可行且节能的解决方案。
ROHM(罗姆) SiC(碳化硅)MOSFET选型指南(中文)
描述- SiC MOSFET原理上在开关过程中不会产生拖尾尾电流,可高速运行且开关损耗低。低导通电阻和小型芯片尺寸造就较低的电容和栅极电荷。此外,SiC还具有如导通电阻增加量很小的优异的材料属性,并且有比导通电阻可能随着温度的升高而上升2倍以上的硅(Si)器件更优异的封装微型化和节能的优点。
型号- SCT3160KL,SCT4062KR,SCT3030KLHR,SCT4013DE,SCT3080AW7,SCT2450KE,SCT3160KW7,SCT2H12NZ,SCT4062KW7HR,SCT2450KEHR,SCT4013DR,SCT3060ALHR,SCT3040KRHR,SCT3060ARHR,SCT3040KLHR,SCT4036KEHR,SCT4045DRHR,SCT3022KLHR,SCT2160KE,SCT3080KW7,SCT3017ALHR,SCT3022AL,SCT3080ALHR,SCT3060AR,SCT3105KLHR,SCT4036KR,SCT3060AL,SCT4026DEHR,SCT4062KRHR,SCT3040KR,SCT2080KE,SCT3080KR,SCT3105KRHR,SCT3120AL,SCT4013DW7,SCT3030KL,SCT4062KWAHR,SCT4062KE,SCT3080ARHR,SCT4036KW7,SCT2280KEHR,SCT3120ALHR,SCT2280KE,SCT4062KWA,SCT3030AR,SCT3030AL,SCT3030AW7,SCT4036KRHR,SCT4045DEHR,SCT3120AW7,SCT3040KL,SCT3105KW7,SCT2080KEHR,SCT4018KW7,SCT4045DWA,SCT3080KL,SCT3030ALHR,SCT4062KW7,SCT3040KW7,SCT3022ALHR,SCT3030ARHR,SCT4045DW7,SCT3017AL,SCT4036KE,SCT4018KE,SCT4045DE,SCT4026DW7,SCT4062KEHR,SCT3080AR,SCT4026DW7HR,SCT4026DE,SCT4026DWA,SCT3160KLHR,SCT3080AL,SCT4045DW7HR,SCT4045DR,SCT2160KEHR,SCT3022KL,SCT4018KR,SCT4026DR,SCT4045DWAHR,SCT3105KL,SCT3160KW7HR,SCT3105KR,SCT3080KLHR,SCT3060AW7,SCT4026DRHR,SCT3080KRHR,SCT4026DWAHR
【经验】简析Sic MOSFET相对于IGBT器件的三个优势:低导通损耗、低开关损耗、高驱动电压条件下更低导通电阻
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ROHM提供支持电力电子仿真工具PSIM™的第4代SiC MOSFET仿真模型
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ROHM(罗姆)SiC(碳化硅)MOSFET选型指南(英文)
目录- SiC MOSFETs
型号- SCT3160KL,SCT4062KR,SCT3030KLHR,SCT4013DE,SCT3080AW7,SCT2450KE,SCT3160KW7,SCT2H12NZ,SCT4062KW7HR,SCT2450KEHR,SCT4013DR,SCT3060ALHR,SCT3040KLHR,SCT4036KEHR,SCT4045DRHR,SCT3022KLHR,SCT2160KE,SCT3080KW7,SCT3017ALHR,SCT3022AL,SCT3080ALHR,SCT3060AR,SCT3105KLHR,SCT4036KR,SCT3060AL,SCT4026DEHR,SCT4062KRHR,SCT3040KR,SCT2080KE,SCT3080KR,SCT3120AL,SCT4013DW7,SCT3030KL,SCT4062KE,SCT4036KW7,SCT2280KEHR,SCT2280KE,SCT3030AR,SCT3030AL,SCT3030AW7,SCT4036KRHR,SCT4045DEHR,SCT3120AW7,SCT3040KL,SCT3105KW7,SCT2080KEHR,SCT4018KW7,SCT3080KL,SCT3030ALHR,SCT4062KW7,SCT3040KW7,SCT3022ALHR,SCT4045DW7,SCT3017AL,SCT4036KE,SCT4018KE,SCT4045DE,SCT4026DW7,SCT4062KEHR,SCT3080AR,SCT4026DW7HR,SCT4026DE,SCT4036KW7HR,SCT3080AL,SCT4045DW7HR,SCT4045DR,SCT2160KEHR,SCT3022KL,SCT4018KR,SCT4026DR,SCT3105KL,SCT3105KR,SCT3080KLHR,SCT3060AW7,SCT4026DRHR
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ROHM 栅极驱动器选型表
采用罗姆独创的微细加工技术,开发出片上变压器工艺。进而成功开发出小型、内置绝缘元件的栅极驱动器。
产品型号
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品类
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Grade
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Isolation Voltage [Vrms]
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Channel
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Vcc1 (Min.) [V]
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Vcc1 (Max.) [V]
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Vcc2 (Min.) [V]
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Vcc2 (Max.) [V]
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VEE2 [V]
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Iout [A]
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I/O Delay Time (Max.)[ns]
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Min. Input Pulse Width [ns]
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Temperature (Min.)[°C]
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Temperature (Max.)[°C]
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Switching Controller
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Temperature Monitor
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Package
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Functional Safety
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Common Standard
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BM6101FV-C
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栅极驱动器
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Automotive
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2500
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1
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4.5V
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5.5V
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14V
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24V
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-12V to 0V
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3A
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350ns
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180ns
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-40℃
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125℃
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No
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No
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SSOP-B20W
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FS supportive
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AEC-Q100 (Automotive Grade)
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选型表 - ROHM 立即选型
SiC MOSFET损耗计算方法:通过波形的线性近似分割来计算损耗的方法
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罗姆第4代SiC MOSFET裸芯片批量应用于吉利集团电动汽车品牌“极氪”3种主力车型
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型号- PS2501L-1,MCR18ERTJ200,NJM78L05UA,MCR03EZPJ332,MCR03EZPJ334,RK73B1JTTD104J,PC092-01-00,B4B-XH-A,TR10P,DE1E3KX222MA4BN01,RK73B1JTTD472J,GRM188B31H104KA92,RB751S-40,MB3P-90,RK73B2BTTD105J,RK73B2BTTD4R7J,PH-1X10RG2,RK73B1JTTD103J,B5B-PH-K-S,PH-2X09SG,SSM3K318T,GRM1851X1H472JA44,KRB-408,GRM188B11H103KA01,HOT-2608B,ELXZ350ELL101MF15D,TLP700A,SCT3030AL,GRM188R11H104KA93,MCR10ERTJ4R7,TC4069UBF,RK73B1JTTD102J,PC045-00-00,S4B-EH,MOSX1C1R0J,NJM431U,GRM185B31E105MA12,DE1E3KX102MA4BN01,2SCR542P,GRM188R71E104KA01,PH-2X04SG,FHU-2×4SG,MCR10EZPJ105,PH-2X08SG,RK73B1JTTD153J,RK73B1JTTD101J,MCR03EZPJ101,ADR-48-50-0R5YA,MCR03EZPJ102,MCR03EZPJ103,24LC64SN,EG01C,MCR03ERTJ302,CQ-3303,CT-6E-P5KΩ,TR008A,1SS355,NE555D,ECQE6103KF,MCR18ERTJ4R7,ES1A,GRM188B11H102KA01,PC089-01-00-50P,NJM2732M,BFC233920105,MB4P-90,MCR03ERTJ331,B3P-VH,TBD,STR-A6079M,ACPL-C87AT,SCS212AM,MCR18ERTJ1R0,TRANS-LINK,GRM1851X1H222JA44,2SAR542P,MOSX1C334J,MCR03ERTJ202,FHU-2X9SG,VDCT,UDZS5.1B,ECQE6104KF,ELXZ100ELL681MF15D,S3B-EH,RK73B1JTTD271J,2SC3325,PH-1X04SG,MCR03EZPJ152,GRM188R71E105KA12,ELXS451VSN561MA50S,GRM21BR71E105KA99,MCR03ERTJ470,RK73B1JTTD470J,SCT3017AL,RK73B2BTTD563J,RK73B1JTTD000J,TA48M05F,MCR03ERTJ102,MCR03ERTJ103,SBR1U150SA-13,FHU-2X8SG,450MPH105J,UCS2W220MHD
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SiC MOSFET 同Si 基MOSFET和IGBT一样,由于存在米勒电容,都会有米勒效应的存在。由于SiC材料所带来的优势,SiC MOSFET可以工作在更高开关频率下,这样就会面临更严峻的误触发现象。所以在驱动电路设计中需要增加相关设计,使之能够较为有效地避免误触发。本文将主要介绍增加栅极电容的方式。
ROHM 4th Gen SiC MOSFET Simulation Models for PSIM™ Now Available
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