CHK8013-99F,a GaN Wideband Capability Transistor Covering DC to 10GHz from UMS
The CHK8013-99F is a new GaN wideband capability transistor covering DC to 10GHz.
It exhibits 14W of power and a very good PAE of 70%. It enables as much as 17dB gain and consumption as low as 180mA @30V. Designers can use the CHK8013-99F in Pulsed and operating modes.
This product requires an external matching circuitry.
This circuit is designed on an in-house GaN 0.25µm Hemt process.
This general purpose transistor is suitable for a wide range of RF power applications such as Radar and Telecommunication.
Main Features:
RF Bandwidth: Up to 10GHz
Psat: 14W
PAE: 70% @Psat
DC bias: Vd up to 30V
Pulsed and Operating Modes
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本文由洛希转载自UMS News，原文标题为:New GaN state of the art transistor: CHK8013-99F，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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