【应用】高频驱动器IXD_609系列应用于SiC MOSFET，峰值驱动电流9A，上升下降时间小于45ns

时间： 2020-03-08 来源：世强

技术问答

采用第三代半导体技术SiC工艺的MOSFET器件具有导通电阻小、开关损耗低、耐压强度高、高温特性好的优势，在新能源汽车高频DCDC电路中得到广泛应用。SiC MOSFE对驱动电路要求较高，主要体现在驱动电压和驱动速度上，同时需要避免闩锁效应的影响，在高频率开关下还需要保证足够大的驱动电流。推荐IXYS(Littelfuse收购)的高速驱动器 IXD_609，峰值驱动电流为9A，同时上升和下降时间小于45ns，工作电压4.5-35V，以下是IXD_609典型电气参数：

IXD_609高速驱动器采用内部电路消除了交叉传导和电流“直通”的问题，输入电压几乎不受闩锁效应的影响，工作温度范围-40℃到125℃，同时符合汽车级AEC-Q100认证；IXD_609可以提供带有使能功能的非反相驱动器IXDD609SI、非反相驱动器IXDN609SI和反相驱动器IXDI609SI，特别适合新能源汽车高频DCDC的各种开关MOSFET应用，可以提高效率，以下是IXD_609系列高速驱动器的内部框图。

图1 IXD_609高速驱动器引脚示意图

综上所述，IXYS的高速驱动器IXD_609具有4.5-35V宽工作电压、9A大驱动电流、低延时、低功耗、通过汽车级AEC-Q100标准的特性，是车载高频DC/DC中SiC MOSFET驱动电路设计的优秀解决方案。

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