UnitedSiC (now Qorvo) Announces 1200V Gen 4 SiC FETs with Industry-best Figures of Merit

2022-05-19 UnitedSiC

May 11, 2022 – Qorvo® (Nasdaq: QRVO), a leading provider of core RF and power solutions that connect and protect the world, announced a next-generation series of 1200V SiC FETs with industry-leading figures of merit in on-resistance.  The new UF4C/SC series of 1200V Gen 4 SiC FETs are ideally suited for mainstream 800V bus architectures in onboard chargers for electric vehicles, industrial battery chargers, industrial power supplies, DC/DC solar inverters, as well as welding machines, uninterruptible power supplies, and induction heating applications.


Anup Bhalla, Chief Engineer – Power Devices, UnitedSiC/Qorvo, said: “Expanding our 1200V range with higher performance Gen4 options allows us to better serve the engineers who are moving their bus designs to 800V. In electric vehicles, this move to higher voltages is inevitable and these new devices, with four different RDS(on) classes, help designers select the best possible SiC choice for every design.”


Highlighting the new UF4C/SC series are the following best-in-class SiC FET figures of merit:

All RDS(on) options (23, 30, 53, and 70 milliohms) are offered in the industry-standard 4-lead kelvin source TO-247 package, providing cleaner switching at higher performance levels. The 53 and 70 milliohm devices are also available in the TO-247 3-lead package. This series of parts have excellent reliability, based on the well-managed thermal performance, which is a result of an advanced silver-sinter die attach and advanced wafer-thinning process.


All 1200V SiC FETs are included in FET-Jet Calculator™, a free online design tool that allows for instant evaluation of efficiency, component losses, and junction temperature rise of devices used in a wide variety of AC/DC and isolated/non-isolated DC/DC converter topologies. Single and paralleled devices may be compared under user-specified heat-sinking conditions to enable optimum solutions.


Pricing (1000-up, FOB USA) for the new 1200V Gen 4 SiC FETs range from $5.71  for the UF4C120070K3S to $14.14 for the UF4SC120023K4S. All devices are available from authorized distributors.


Qorvo’s Silicon Carbide and power management products charge, power, and control a wide range of industrial, commercial, and consumer applications.

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本文由星晴123转载自UnitedSiC,原文标题为:UnitedSiC (now Qorvo) Announces 1200V Gen 4 SiC FETs with Industry-best Figures of Merit,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

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商品及供应商介绍  -  UNITEDSIC  - May 2022 PDF 英文 下载

UnitedSiC SiC FET User Guide

型号- UJ3C065080T3S,UJ4C075018K4S,UF3C065040T3S,UF3C120080K3S,UF3SC065040D8S,UJ3C065030K3S,UF3SC065030D8S,C1808C681JGGAC7800,UF3C065040B3,UF3C065080B3,UJ4C075023K3S,UJ4SC075009K4S,CRCW201010R0JNEFHP,UJ4C075033K3S,UJ3C065080B3,UJ3C120040K3S,UF3C065030T3S,UF3SC120016K3S,UF3C065080K3S,UJ4SC,UF3C065030K4S,CRCW25124R70JNEGHP,UJ3C065030B3,UF3CXXXYYYK3S,UJ4SC075006K4S,C1206C680JGGAC7800,UF3SC065007K4S,UF3C120040K4S,UF3C065030B3,UF3C120400K3S,UJ4CXXXK3S,UF3C120150B7S,UF3C065040K4S,UJ4C075044K3S,C1206C151JGGAC7800,UJ3C065030T3S,UJ4C,UF3C065030K3S,UJ3C120150K3S,UF3C120400B7S,UJ4C075060K4S,CRCW20104R70JNEFHP,UF3C065080B7S,UF3C170400B7S,UF3CXXXYYYK4S,202R18N101JV4E,SR1206FR-7W4R7L,UF3SC120009K4S,UF3C120080B7S,KTR18EZPF10R0,UF3C065080T3S,UF3C120040K3S,UF3C120150K4S,UF3C065040K3S,UJ3C120080K3S,UJ3C065080K3S,UF3SC,KTR18EZPF4R70,UF3C120080K4S,UJ4C075044K4S,CRCW251210R0JNEGHP,UJ3C,UJ4C075018K3S,UF3C,UF3SC065030B7S,C1206C221JGGAC7800,C1210C331JGGACTU,SR1206FR-7W10RL,UJ4C075023K4S,UJ4C075060K3S,UJ3CXXXYYYK3S,UJ4C075033K4S,UJ4SC075011K4S,UF3C120150K3S,UF3C170400K3S,UF3SC120040B7S,UF3SC065040B7S,UF3SC120016K4S,UF3C065080K4S,202R18N470JV4E

用户指南  -  UNITEDSIC  - September 2021 PDF 英文 下载 查看更多版本

UnitedSiC‘s FET-Jet Calculator Taking The Guesswork out of SiC FET Selection

UnitedSiC‘s new FET-Jet CalculatorTM is free-to-use without any registration and enables a designer to select an application, topology, electrical design parameters and ambient temperature, and quickly try a device from UnitedSiC‘s range of SiC FETs and diodes with a chosen heatsink rating. Critical performance results are instantly calculated, including overall efficiency, with component losses separated out into dynamic and conduction contributions, along with junction temperatures and current stress levels. If a resulting voltage is above the rating of the selected part, a warning is given.

原厂动态    发布时间 : 2021-07-11

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