【产品】强茂推出ITO-220AB-F、TO-252AA封装的超结MOSFET新品

时间： 2021-07-12 来源：PANJIT

技术问答

强茂新推出第一代Super Junction MOSFET（超结MOSFET）凭借能够提供简单高效的设计解决方案的特性，可成为各应用中PSU系统以及各种拓扑结构的DC-DC转换器、功率因子校正(PFC) 电路最佳解决方案。强茂此次开发的新产品主要应用于Power Supply Unit (PSU)当中，其广泛应用于消费性和工业控制的电源转换系统，例如AC-DC或DC-DC转换器。Multi Epi Layer技术应用于Super Junction MOSFET，导通损耗随电阻降低而减少，让Super Junction MOSFET能应用于更高功率系统。强茂新一代Super Junction MOSFET目标应用市场包含电信、服务器数据中心、计算机电源供应系统、家电、游戏变压器及PD充电器等。

此外，强茂Super Junction MOSFET主要特性之一为本体二极管出色的di/dt耐用性和优化的开关性能，可实现优秀EMI表现特性。凭借强茂Super Junction MOSFET在性能方面的优势，工程师或研究开发人员也能为最终产品模块设计出更长的使用寿命和更好的运作效能。强茂Super Junction MOSFET系列产品开发范围从600V到650V并采用ITO-220AB-F以及TO-252AA (预计2021/Q3发布) 两种封装选择，提供下一代电源供应系统设计的理想解决方案。

PSU电路方框图

用于PSU电路的Super Junction MOSFETs
◆ AC/DC转换器的PFC电路
◆ DC/DC转换器的初级侧切换

系统评估

(600W CCM PFC, Vin = 110Vac/60Hz, Vout = 400V, Fsw = 65kHz with voltage spike < (BV*80%)

本体二极管的耐用性能

Body diode di/dt test @ IF = 10A

Super Junction MOSFET 产品系列

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Lang Lv7. 资深专家 2021-07-23

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丝雨 Lv8. 研究员 2021-07-22

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小李飞刀 Lv8. 研究员 2021-07-22

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【产品】600V和650V Super Junction MOSFET，具有出色的 di/dt 耐用性和优化的开关性能

强茂推出全新600V和650V Super Junction MOSFET，主要特性之一为本体二极管出色的 di/dt 耐用性和优化的开关性能，可实现优秀EMI表现特性。主要应用于Power Supply Unit (PSU)当中，其广泛应用于消费性和工业控制的电源转换系统。

新产品发布时间 : 2021-09-02

【产品】600V/15AN沟道高压超结MOSFET PJP60R290E/PJF60R290E，低导通电阻，开关速度快

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目录- 公司简介 MOSFET Product Introduction VDMOS 超结MOSFET 中低压MOSFET 碳化硅肖特基二极管碳化硅MOS MOSFET/SiC肖特基二极管封装

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