【产品】4Mb异步快速SRAM存储器S6R40xxx1A系列，采用先进的CMOS工艺和6-TR的单元技术
NETSOL S6R4016(V/C/W)1A和S6R4008(V/C/W))1A是一款存储容量为4,194,304位的异步快速SRAM存储器，存储结构是由16(8)位组成256K(512K)字。S6R4016(V/C/W)1A(S6R4008(V/C/W)1A)使用16(8)条公共输入和输出线，并具有一个输出使能引脚，该引脚的运行速度比读取周期中的地址访问时间快。而S6R4016(V/C/W)1A允许通过数据字节控制来访问低字节和高字节数据（UB*，LB*）。该存储器采用先进的CMOS工艺、基于6-TR的单元技术制造，专为高速电路技术而设计。它特别适用于高密度高速系统应用。
S6R4016(V/W)1A采用400mil 44引脚TSOP2和48FBGA封装。S6R4016C1A采用400mil 44引脚TSOP2封装。S6R4008(V/W)1A采用400mil44引脚TSOP2和48FBGA封装。S6R4008C1A采用400mil 44引脚TSOP2封装。
特性
• 快速访问时间：8、10、12、15ns（最大值）
• CMOS低功耗
待机：（TTL）：10mA（最大值）
（CMOS)：6mA(最大值)
工作：35mA（8ns，最大值）
30mA（10ns，最大值）
• 单3.3±0.3V或5.0±0.5V电源电压
S6R40xxV1A：3.3±0.3V电源电压
S6R40xxC1A：5.0±0.5V电源电压
• 电源范围广：S6R40xxW1A：1.65V~3.6V电源电压（工业级温度）
2.4V～3.6V电源电压（汽车级温度）
• TTL兼容输入和输出
• 完全静态操作，无需时钟或刷新
• 三态输出
• 数据字节控制（x16模式） LB：I/O0~I/O7，UB：I/O8~I/O15
• 标准44TSOP2和48FBGA封装引脚配置
• 支持特殊的48FBGA封装引脚配置（高字节和低字节数据在x16情况下交换）
• 符合ROHS标准
• 在商业级和工业级温度范围内工作
绝对最大额定值参数*
*大于“绝对最大额定值”下列出的应力可能会对器件造成永久性损坏。 这只是一个额定应力，不暗示器件在这些或高于本规范操作部分中指示的任何其他条件下的功能操作。 长时间工作在绝对最大额定值条件下可能会影响可靠性。
推荐DC工作条件（TA=0~70℃，所列参数对于工业级温度范围内也有保证）
逻辑模块示意图- S6R4016(V/C/W)1A (256K x 16)
逻辑模块示意图- S6R4008(V/C/W)1A (512K x 8)
封装信息：44-TSOP2-400BF
封装信息：48-FBGA 6mm x 8mm Body, 0.75mm Bump Pitch, 6 x 8 Ball Grid Array
4Mb异步快速SRAM订购信息（256Kx16）
4Mb异步快速SRAM订购信息（256Kx16）-Special Ball Out 48FBGA
4Mb异步快速SRAM订购信息（512Kx8）
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本文由西瓜头头大翻译自NETSOL，版权归世强硬创平台所有，非经授权，任何媒体、网站或个人不得转载，授权转载时须注明“来源：世强硬创平台”。
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TXN,AS6C3216A,AS7C1025B,AS9F34G08SA-25BIN,AS7C316096C-10TIN,N25Q032A13ESFA0F,AS4C32M8SA-7TXN,AS4C32M16SC-7TIN,AS4C16M32SC-7TIN,AS4C32M16D3-10BCN,AS4C2M32SA-6TXN,AS6C6264-55SCN,AS4C32M16D1-5BXN,AS4C8M16SA-7BCN,AS4C8M32SA-7BXN,513B,AS4C8M16SA-6TIN,AS7C1024B,AS7C34098B-10TIN,AS4C32M16D2C-25BXN,AS4C16M16D1-5BXN,AS7C31026B-XXTCN,AS4C4M32SA-7TXN,AS6C4016,AS4C1M16S,AS9F18G08SA-45BAN,AS9F32G08SA-25BIN,AS7C256A-XXJIN,AS7C1026B-XXJCN,AS4C4M16SA-7TCN,AS4C1M16S-7TXN,AS4C32M32MD1A-5BIN,AS7C38096B,AS4C128M16D3C,AS4C64M4SA-7TXN,N25Q064A13EF8A0E,N25Q064A13EF8A0F,4096A,AS6C4008,AS4C64M8SC-7TIN,AS7C38096A,AS4C16M32MD1,AS4C16M16SA-6TIN,AS4C8M16D1A-5TXN,AS4C8M16D1-5BXN,AS4C256M8D2A-25BCN,AS7C4098A-XXTXN,AS5F32G04SNDA-08LIN,AS5F34G04SNDA-08LIN,AS6C1616B,AS4C16M32MD1-5BXN,AS4C1M16S-6TXN,AS4C512M16D3LA-10BXN,AS4C64M4SA-6TXN,AS4C8M16MSA-6BIN,AS6C2016-55BIN,3513B,M29F400FB55N3E2,31025B,AS6C4016B-45ZIN,31025C,AS1C512K16PL-70BIN,AS7C316096C-10BIN,AS4C8M16S
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S6R1616V1M 16Mb异步。快速SRAM规格数据表
描述- 本资料介绍了NETSOL公司的16M异步快速静态随机存储器（Async. FAST SRAM）产品规格。该系列包括S6R1616V1M、S6R1616C1M、S6R1616W1M和S6R1608V1M、S6R1608C1M、S6R1608W1M等多个型号，具有高速访问时间、低功耗等特点，适用于各种高密度、高速系统应用。
型号- S6R1616V1M-XC10,S6R1616W1M-XI10,S6R1616C1M,S6R1616W1M-YC08,S6R1616W1M-YI08,S6R1608W1M-UI08,S6R1608V1M-UI08,S6R1608V1M-UC08,S6R1608W1M-UC08,S6R1616V1M-XI08,S6R1608C1M-XI10,S6R1616W1M,S6R1616V1M-XC08,S6R1616C1M-YC10,S6R1608V1M-XI10,S6R1608W1M-XI10,S6R1616V1M,S6R1616W1M-YC10,S6R1608C1M-XC10,S6R1616V1M-YI10,S6R1608V1M-XC10,S6R1608W1M-XC10,S6R1616C1M-YI10,S6R1608W1M,S6R1616V1M-YC10,S6R1616W1M-YI10,S6R1608V1M,S6R1616W1M-XC08,S6R1616W1M-XI08,S6R1608V1M-XI08,S6R1608W1M-XI08,S6R1608C1M-UC10,S6R1616V1M-YI08,S6R1608V1M-XC08,S6R1608C1M,S6R1608W1M-XC08,S6R1608V1M-UI10,S6R1608W1M-UI10,S6R1616V1M-YC08,S6R1616C1M-XC10,S6R1608V1M-UC10,S6R1608C1M-UI10,S6R1616V1M-XI10,S6R1616W1M-XC10,S6R1608W1M-UC10,S6R1616C1M-XI10
S6R4016V1A 4Mb异步。快速SRAM芯片规格数据表
描述- 本资料介绍了NETSOL公司生产的4M异步快速SRAM产品线，包括S6R4016V1A、S6R4016C1A、S6R4016W1A和S6R4008V1A、S6R4008C1A、S6R4008W1A。这些产品采用先进的CMOS工艺制造，具有高速访问时间、低功耗等特点，适用于商业和工业温度范围。
型号- S6R4008V1A-NI08,S6R4008W1A-NI08,S6R4008V1A-NC08,S6R4008W1A-NC08,S6R4016V1A-UI08,S6R4016W1A-UI08,S6R4016V1A-UC08,S6R4016W1A-UC08,S6R4008W1A-UI10,S6R4008V1A-UI10,S6R4016W1A-XI10,S6R4016V1A-XI10,S6R4008W1A-UC10,S6R4016V1A-XC10,S6R4008V1A-UC10,S6R4016W1A-XC10,S6R4008C1A-UC10,S6R4008C1A-UI10,S6R4008W1A-UI08,S6R4008C1A,S6R4008W1A-NI10,S6R4008V1A-UC08,S6R4008V1A-NI10,S6R4016V1A-XI08,S6R4008V1A-UI08,S6R4016V1A,S6R4016W1A,S6R4016W1A-XI08,S6R4016C1A-UC10,S6R4008W1A-UC08,S6R4008W1A-NC10,S6R4016W1A-UI10,S6R4008V1A-NC10,S6R4016V1A-UI10,S6R4016V1A-XC08,S6R4016W1A-XC08,S6R4008V1A,S6R4016V1A-UC10,S6R4016C1A,S6R4016C1A-UI10,S6R4016W1A-UC10,S6R4008W1A
NETSOL产品列表
型号- S7B323635M,S6R1008C1A,S6L8016W2M,S6R8008C1A,S3R2008V1M,S7B403635M,S6R2008W1A,S7B803635M,S7M403635M,S7N323631M,S7B163635M,S7N403631M,S6R1016V1A,S7M323635M,S6L1016W1M,S6L4016W1M,S6R1616V1M,S6R8008W1A,S6R2008C1A,S7N163631M,S6L8016W1M,S3R8016V1M,S6R1008W1A,S6R2016C1A,S6R4008C1A,S7M803635M,S6R4016V1A,S3R1008V1M,S7A801830M,S7M161835M,S3R3208V1M,S6L4016W2M,S3R1608V1M,S6R2016W1A,S6R4008W1A,S3A3204R0M,S3R4008V1M,S7A321830M,S6L2016W1M,S3R2016V1M,S7N321831M,S6R1616C1M,S3A3204V0M,S6R1016C1A,S3A4004R0M,S7M321835M,S7M401835M,S6R8016W1A,S7B801835M,S6R2008V1A,S6R1016W1A,S7M801835M,S7A161830M,S6R8016C1A,S3R8008V1M,S3A1604R0M,S7N801831M,S6R1616W1M,S7A401830M,S3A1004V0M,S3A4004V0M,S3A1604V0M,S3A1004R0M,S7B401835M,S6L2016W2M,S3R1616V1M,S3R1016V1M,S7A803630M,S7A163630M,S7N803631M,S7M163635M,S6R1008V1A,S7B321835M,S3A2004V0M,S6R4016W1A,S7A403630M,S3R3216V1M,S3A8004R0M,S6L8008W2M,S3R4016V1M,S7B161835M,S3A2004R0M,S3A8004V0M,S6R4008V1A,S7A323630M,S7N401831M,S6R4016C1A,S7N161831M,S6R2016V1A
【产品】完全静态操作的8Mb异步快速SRAM S6R80xxx1A，专为高速电路技术而设计
NETSOL推出的8Mb异步快速SRAM S6R80xxx1A是8388608位的高速静态随机存取存储器，采用先进的CMOS工艺、基于6-TR的单元技术制造，专为高速电路技术而设计。它特别适用于高密度高速系统应用。
S6R4016V1A，S6R4016C1A，S6R4OO8V1A，s6R4008C1A，s6R4008W1A 4M异步快速SRAM A-Die规格
描述- 本资料介绍了NETSOL公司生产的4M位异步快速静态随机存储器（Async FAST SRAM）产品线，包括S6R4016V1A、S6R4016C1A、S6R4016W1A、S6R4008V1A、S6R4008C1A和S6R4008W1A。这些产品具有宽电源电压范围、低功耗、高速访问时间等特点，适用于各种高密度高速系统应用。
型号- S6R4016W1A-UC(I)10,S6R4016V1A-UC(I)08,S6R4016V1A-UI08,S6R4016W1A-UI08,S6R4016V1A-UC08,S6R4016W1A-UC08,S6R4016W1A-XC(I)08,S6R4008W1A-XC(I)10,S6R4008V1A-XC(I)08,S6R4016V1A-UC(I)10,S6R4016WKA-XI10,S6R40XXW1A,S6R4008C1A-UI10,S6R4008C1A,S6R4008V1A-UC(I)08,S6R4016W1A-UC(I)08,S6R4008V1A-UC08,S6R4016V1A-XI08,S6R4008V1A-UI08,S6R4016V1A,S6R4008W1A-XC(I)08,S6R40XXC1A,S6R4016V1A-UI10,S6R4016V1A-XC08,S6R4008V1A-XC(I)10,S6R4008W1A-XI10,S6R4016V1A-UC10,S6R4016WKA-XC(I)08,S6R4008V1A-UC(I)10,S6R4008W1A-XC10,S6R4008W1A,S6R4016W1A-XC(I)10,S6R4016WKA-XC(I)10,S6R4016WKA-XC08,S6R4016C1A-UC(I)10,S6R4016WKA-XI08,S6R4008W1A-XI08,S6R4008W1A-UC(I)08,S6R4016V1A-XC(I)10,S6R4008V1A-XC08,S6R4008W1A-XC08,S6R4016V1A-XI10,S6R4016WKA-XC10,S6R4016V1A-XC10,S6R4008C1A-UC10,S6R4008C1A-UC(I)10,S6R40XXV1A,S6R4008V1A-XCI08,S6R4008W1A-UC(I)10,S6R4016W1A,S6R4016W1A-XI08,S6R4016C1A-UC10,S6R4016W1A-UI10,S6R4016W1A-XC08,S6R4008V1A-XI10,S6R4008V1A,S6R4008V1A-XC10,S6R4016C1A,S6R4016V1A-XC(I)08,S6R4016C1A-UI10,S6R4016W1A-UC10
S6R8016W1A 8Mb异步。快速SRAM芯片规格数据表
描述- 本资料介绍了NETSOL公司生产的8M位异步快速静态随机存取存储器（Async FAST SRAM）产品线，包括S6R8016W1A、S6R8016C1A、S6R8008W1A和S6R8008C1A。这些产品具有高速访问时间、低功耗等特点，适用于商业和工业温度范围。
型号- S6R8008W1A-XI10,S6R8016W1A-XC08,S6R8016W1A-UI10,S6R8008W1A-UC10,S6R8008C1A,S6R8016W1A-XI10,S6R8008W1A-UC08,S6R8016W1A,S6R8016W1A-UI08,S6R8008W1A-XI08,S6R8008W1A-UI10,S6R8016W1A-UC08,S6R8008W1A-XC08,S6R8016W1A-XI08,S6R8008C1A-UI10,S6R8008W1A-UI08,S6R8016C1A-UI10,S6R8016C1A,S6R8016W1A-XC10,S6R8008C1A-UC10,S6R8016W1A-UC10,S6R8008W1A-XC10,S6R8008W1A,S6R8016C1A-UC10
S6R3216W1M S6R3208W1M 32MB异步。快速SRAM规格
描述- 本资料介绍了两款32兆位异步快速静态随机存取存储器（Async. FAST SRAM）产品：S6R3216W1M和S6R3208W1M。这些产品具有高速访问时间、低功耗等特点，适用于高速电路技术。文档提供了产品的功能描述、特性、引脚配置、电气参数、工作条件、时序图以及封装尺寸等信息。
型号- S6R3208W1M,S6R3208W1M-XCI10,S6R3216W1M-YCI10,S6R3216W1M,S6R3216W1M-XCI10
【产品】采用先进CMOS工艺的异步快速SRAMS6R10xxx1A，待机功耗最低仅6mA
NETSOL推出的SRAMS6R10xxx1A是一款存储容量为16(8)位组成64K(128k)字，1048576位高速静态随机存取存储器（异步快速SRAM），使用16(8)条公共输入和输出线，并具有一个工作速度快于读取周期中地址访问时间的输出使能引脚。
S6R3216W1M S6R3208W1M 32Mb异步。快速SRAM规格数据表
描述- 本资料介绍了两款32兆位异步快速静态随机存取存储器（Async FAST SRAM）产品：S6R3216W1M和S6R3208W1M。这些产品采用先进的CMOS工艺制造，具有高速访问时间、低功耗等特点，适用于高密度高速系统应用。
型号- S6R3208W1M-XI10,S6R3208W1M,6R3216W1M-XI10,6R3216W1M-XC10,S6R3208W1M-XC10,S6R3216W1M
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可定制板装式压力传感器支持产品量程从5inch水柱到100 psi气压；数字输出压力传感器压力范围0.5~60inH2O，温度补偿范围-20~85ºС；模拟和数字低压传感器可以直接与微控制器通信，具备多种小型SIP和DIP封装可选择。
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可定制无线位移传感器量程范围10~600mm，采用了无线传输方式，可远程自动实时检（监）测位移量值，准确度级别(级)：0.2、0.5;内置模块：无线传输模块、供电模块;传输距离L(m)：可视距离1000 (Zigbee、 LORA)。
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