Alliance Memory’s Low-Power SDRAM Portfolio Continues to Grow With the Addition of 256Mb LPDDR2 Devices in 134-Ball and 168-Ball FBGA Packages

2023-11-12 ALLIANCE News

SAN CARLOS, Calif. —May 3, 2019 — ALLIANCE Memory announced that the company’s portfolio of Low-Power SDRAMs for mobile and embedded systems in the automotive, consumer, industrial, and medical spaces continues to grow. The latest additions include two new 256Mb LPDDR2 devices: the AS4C8M32MD2A-25B2CN and AS4C8M32MD2A-25BCN.


“We’re committed to providing our customers with a complete offering of SDRAMs that combine low power consumption with power-saving features to extend battery life in mobile devices,” said David Bagby, Alliance Memory president and CEO. “From wearables to ADAS systems, our portfolio features a variety of densities and package options — now including 256Mb LPDDR2 devices in the 134-ball and 168-ball FBGA packages — to meet the needs of a wide range of applications.”


Alliance Memory’s lineup of high-speed CMOS mobile low-power SDRAMs includes SDR (LPSDR), double data rate (LPDDR), and DDR2 (LPDDR2)devices. Featuring a power consumption of 1.8V, the company’s LPSDR SDRAMs are available in densities of 128Mb, 256Mb, and 512Mb in 54-ball and 90-ball FBGA packages. LPDDR devices feature power consumption from 1.7V to 1.95V and densities of 256Mb, 512Mb, 1Gb, and 2Gb in the 60-ball and 90-ball FBGA packages. Enabling ultra-slim designs, LPDDR2 SDRAMs offer power consumption of 1.2V/1.8V and densities of 256Mb, 1Gb, 2Gb, and 4Gb in the 134-ball and 168-ball FBGA packages.


For designers of mobile devices tasked with providing more functionality in tighter spaces while using less power, Alliance Memory’s low-power SDRAMs offer a variety of power-saving features, including auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures. In addition, their partial-array self-refresh (PASR) feature reduces power by only refreshing critical data, while a deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required.


Low-power SDRAMs from Alliance Memory include:

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本文由涂抹转载自ALLIANCE News,原文标题为:Alliance Memory’s Low-Power SDRAM Portfolio Continues to Grow With the Addition of New 256Mb LPDDR2 Devices in 134-Ball and 168-Ball FBGA Packages,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

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ALLIANCE 存储器选型表

提供存储器、存储芯片、SRAM、SDRAM、DDR1、DDR2、DDR3、DDR4选型,VCC(V):0.6-5,MSL LEVEL:0-5,CLOCK(MHz):133-1866,可支持商业级/工业级/汽车级。

产品型号
品类
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DENSITY
ORGANISATION
VCC(V)
TEMPERATURE RANGE(°C)
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型号- AS4C8M16SA-7TXN,AS6C2008A,AS6C62256-55SXN,ASFC64G31T5-51BIN,AS4C8M32MD2A-25BPCN,AS4C64M32MD2A-25BIN,AS5F18G04SND-10LIN,AS1C512K16P-70BIN,AS4C8M32MSB-6BIN,AS7C38096B-10BIN,ASFC32G31T3-51BIN,AS29CF160B-55TIN,AS4C16M16SA-6TXN,AS7C31025C-12JIN,AS7C31024B-XXTCN,M29F160FT55N3E2,AS4C64M16MD2A-25BIN,AS4C32M16MSB-6BIN,M29F800FT55N3E2,AS25F1128MQ-70WIN,AS7C1024B-XXJCN,AS5F34G04SNDB-08LIN,AS29CF800T-55TIN,AS4C8M16SA-6BXN,AS4C4M16SA-6TXN,AS9F38G08SA-25BIN,N25Q064A13ESFA0F,AS25F364MQ-10WIN,AS9F31G08SA-25BIN,AS4C32M8D1-5TXN,AS4C64M4SA-6 TXN,AS4C256M16D4-83BXN,AS7C31025B-XXJIN,AS4C8M16SA-6 TXN,AS1C1M16P-70BIN,AS4C8M16SA-7 BXN,AS25F34MD-10S1IN,AS6C6416-55TIN,AS4C128M8D2A-25BXN,AS6C2008A-55TIN,AS4C2M32S-7BXN,AS4C512M16D3LC-12BXN,AS4C2M32SA-7 TXN,AS7C1026B-XXTIN,AS7C325632-10BIN,AS6C2016-55ZIN,AS4C16M16SA-7TXN,AS1C1M16PL-70BIN,N25Q064A13EF8H0E,AS6C4016B-45BIN,AS4C512M8D4A-75BXN,AS4C512M16D4A-62BXN,AS4C1G32MD4V-046BIN,AS7C34096B-10BIN,AS4C4M16SA-7TXN,AS6C1008-55PCN,AS7C164A-15PXN,AS1C8M16PL-70BIN,AS6C1008-55SIN,AS4C256M16MD4V-062BAN,N25Q032A13ESCA0F,AS7C34098B,ASFC4G31M-51BIN,AS5F32G04SNDB-08LIN,AS4C4M16SA-6BXN,AS7C34098A,N25Q064A13EF640E,AS7C38098A-10BIN,AS7C3256A-XXTIN,AS4C32M16D3-12BXN,M45PE80-VMP6G,AS4C8M16SA-6TXN,AS4C32M16D3L-12BXN,AS7C1026B-XXTCN,AS4C64M16D2B-25BCN,AS4C128M32MD2A-25BIN,AS7C4098A-XXJXN,AS4C512M16MD4V-053BIN,AS7C256A-XXTIN,AS4C1G8D3LA-10BXN,AS4C2M32S-6BXN,AS4C8M32S-6TXN,AS4C256M16D3C-93BXN,AS4C128M16MD2A-25BIN,AS7C4096A-XXTXN,AS4C64M4SA-7 TXN,AS4C32M16SB-7 TXN,AS4C512M8D4-83BXN,AS4C16M16MSA-6BIN,AS6C8016B,AS6C1008-55TIN,AS4C4M32SA-6 TXN,AS7C38098A-10TIN,AS4C64M16MD1A-5BIN,A7C351232-10BIN,AS6C8016,AS7C34096A,AS9F14G08SA-45BIN,AS7C34096B,AS7C34096B-10TIN,AS6C1616B-45BIN,AS4C2M32SA-6 TXN,AS4C4M16SA-7 TXN,AS4C16M16SA-7 TXN,AS6C1616-55TIN,AS7C316098A,AS7C316098B,AS4C16M16MD1-6BCN,AS4C256M32MD4-062BAN,AS6C1016-55BIN,AS29CF040-55CCIN,AS6C4008-55SIN,AS4C512M8D3LC-12BXN,AS6C4008-55PCN,AS6C1616B-55BIN,AS4C8M32SA-6 BXN,AS7C316096B-10TIN,AS4C128M8D3B-12BXN,AS5F31G04SND-08LIN,ASFC16G31M-51BIN,AS4C32M16D1A-5TXN,AS4C128M16MD4V-062BAN,AS6C4008-70SAN,AS6C8008B-45BIN,AS4C32M16SB-7TXN,AS7C31024B-XXTJCN,AS4C8M32MD2A-25BCN,AS7C32098A-XXTXN,AS25F304MD-10S1IN,AS7C3256A,AS25F1128MQ-70SIN,AS6C8016B-55ZIN,AS6C1608B-45BIN,M45PE16-VMW6TG,AS6C1016,AS6C4008-55BIN,AS7C351232,AS7C316096A-10TIN,AS4C8M16MSB-6BIN,M45PE20-VMN6P,AS4C256M16D3C-93BCN,AS4C16M32SB-6BXN,AS7C38096A-10TIN,AS4C32M16SB-6 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选型指南  -  ALLIANCE  - 2024/8/8 PDF 英文 下载 查看更多版本

Product Change Notification (PCN) for Alliance 8Gb DDR4 SDRAM ‘Rev.0’ DIE (20240630)

型号- AS4C1G8D4-75BCNTR,AS4C512M16D4A-62BXN,AS4C1G8D4A-62BXN,AS4C512M16D4A-62BINTR,AS4C512M16D4A-62BCNTR,AS4C512M16D4-75BINTR,AS4C1G8D4-75BCN,AS4C1G8D4A-62BCNTR,AS4C1G8D4A-62BCN,AS4C512M16D4-75BIN,AS4C1G8D4-75BXN,AS4C512M16D4-75BCN,AS4C512M16D4-75BCNTR,AS4C512M16D4A-62BIN,AS4C1G8D4A-62BIN,AS4C1G8D4A-62BINTR,AS4C1G8D4-75BINTR,AS4C512M16D4-75BXN,AS4C1G8D4-75BIN,AS4C512M16D4A-62BCN

产品变更通知及停产信息  -  ALLIANCE  - 30th JUNE 2024 PDF 英文 下载

Alliance Memory 16Gb and 32Gb LPDDR4X SDRAMs Combine Low-Voltage Operation of 0.6V With Fast Clock Speeds of 2.133GHz and High Data Rates of 4.2Gbps

Alliance Memory announced that it has expanded its offering of high-speed CMOS mobile low-power SDRAMs with new 16Gb and 32Gb LPDDR4X devices that combine low power ratings with increased clock speeds and data rates in the 200-ball FBGA package.

产品    发布时间 : 2024-05-09

New 2Gb/4Gb/8Gb LPDDR4 SDRAMs with on-chip ECC Offer lower Power Consumption

Alliance Memory has expanded its offering of high-speed CMOS mobile low-power SDRAMs with new LPDDR4 devices featuring on-chip ECC. For improved performance with higher power efficiency than previous-generation LPDDR3 SDRAMs, the 2Gb AS4C128M16MD4-062BAN, 4Gb AS4C256M16MD4-062BAN and AS4C128M32MD4-062BAN, and 8Gb AS4C256M32MD4-062BAN offer lower power consumption and faster speeds in the 200-ball FBGA package.

新产品    发布时间 : 2021-01-05

SMARTsemi Automotive Journey Extends with new AEC-Q100 Class 2 Compliant 4Gb DDR3 x8 and x16 SDRAM Components

This article mainly introduces SMARTsemi‘s new 4Gb DDR3 x8 and x16 SDRAM products with the AECQ-100 standard, and further expands the application for the automotive market

原厂动态    发布时间 : 2024-07-24

Alliance Memory Highlighted Latest SRAM, DRAM, eMMC, and Flash Memory ICs at Electronica 2022

Alliance Memory announced its technology lineup for electronica 2022, in Munich, Germany. Exhibiting in Hall C3, Stand 328, the company highlighted its latest SRAM, DRAM, eMMC, and flash memory ICs for the communications, computing, embedded, IoT, industrial, and consumer markets.

原厂动态    发布时间 : 2022-12-01

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