What is SiC and why is SiC for power devices?
Rugged and High Efficiency:Silicon carbide (SiC) is a compound semiconductor material with the energy bandgap of 3.2eV. The wide bandgap of SiC enables it to withstand roughly 10 times of electric field compared to conventional Silicon semiconductors (bandgap = 1.1eV).
The power devices are used to regulate the electric power (current and voltage). Ideally, power devices should have zero electric resistance (therefore no conduction loss), instant switching (no switching loss), and infinite voltage blocking capability (zero leakage current). However, in reality, engineers are facing trade-offs among characteristics of different kinds of power devices.
Power devices use an epitaxial layer to withstand the voltage. In order to withstand a higher voltage, the doping concentration of the epitaxial layer has to be lower and the thickness of the epitaxial layer has to be thicker. A lightly-doped, thick epitaxial layer increases the resistance of power devices per unit area, which increases the cost and reduces the performance. Therefore, in Si power devices, simple unipolar devices are used only for rated voltage smaller than 400V, and for rated voltage larger than 600V, the majority of commercial devices use super junction structures or bipolar devices such as IGBT to reduce the electric resistance by means of charge balance and conductivity modulation. Although these sophisticated structures improve the specific on resistance, they also come with some side effects such as more severe EMI, higher switching loss (tailing current).
In SiC, because of its 10 times strength to withstand electric field, its theoretical specific on-resistance can be 200 times smaller than Si counterpart, which enables people to use SiC to manufacture high voltage devices with simple structures. Today, unipolar SiC power devices, including SiC MOSFETs and SiC Schottky rectifiers, have been commercialized for voltage rating up to 3300V, which is unreachable by any other semiconductor materials.
10X higher dielectric strength than Si
200X lower specific on-resistance than Si
High temperature operation
5X higher avalanche energy density
This Trend is Set to Continue
SiC power devices have been increasingly adopted by applications whenever the cost/performance is justified. The trend of replacing Si with SiC is set to continue and will accelerate.
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设计经验 发布时间 : 2021-10-16
Application Brochure for INDUSTRIAL
型号- BD52W04G-C,SH8KXX SERIES,R6009RND3,BD900N1W,QH8KXX SERIES,R6077VNZ,LTR100L,BM2SCQ123T-LBZ,R6007RND3,BM2SCQ122T-LBZ,BD900N1G-C,RFL60TS6D,LTRL SERIES,RBR2VWM60A,BD9XXN1 SERIES,BD933N1,RFS SERIES,RBR1VWM40A,BD933N1WG-C,BM2SC12XFP2-LBZ,BD52W01G-C,LTR18,MCR10L,CSL1901,RB068VWM-60,BP3622,BP3621,BD14210G-LA,SCT4013DW7,BM2P06XMF-LBZ,R6035VNX3,RB068VWM150,MCR18L,R60XXRNX SERIES,RFS30TS6D,BD950N1WEFJ-C,CSL1901DW,BD950N1WG-C,BM2LE160FJ-C,BM2P060LF-Z,BM2SC124FP2-LBZ,BV1LE080EFJ-C,QH8MX5 SERIES,BM2SC123FP2-LBZ,SH8MC5,SCT4018KW7,RB168VWM-40,QH8KB5,R6013VNX,QH8KB6,RGWXX65C SERIES,RBR2VWM30A,BM2LE250FJ-C,RGW00TS65CHR,RFL SERIES,SH8MX5 SERIES,SCT4045DW7,BV1LE250EFJ-C,SCT4036KE,SCT4018KE,QH8MX5,SCT4045DE,R6024VNX,BM2SCQ124T-LBZ,BD52W03G-C,SCT4026DE,BM2SCQ121T-LBZ,R6055VNX,RB168VWM-60,BD48W00G-C,R6018VNX,R6055VNZ,SCT4045DR,RBR1VWM30A,SH8MB5,SCT4018KR,RGW80TS65CHR,SCT4026DR,R6035VNX,MCRL,CSL1901MW,QH8KC6,LTR10L,QH8KC5,RB168VWM150,R60A4VNZ4,BD7XXL05G-C SERIES,BM2P061MF-Z,BD52W06G-C,BM6437X,CSL1901UW,BM64378S-VA,SCT4062KR,BD900N1EFJ-C,SCT4013DE,BM2P063MF-Z,R6024VNX3,SCT4013DR,LTR100,BD7XXL05G-C,R60XXVNX SERIES,BD950N1,BD48HW0G-C,RB068VWM100,RBR2VWM40A,BD1421X-LA SERIES,RFL,BD9XXN1,SH8KXX,CSL1901VW,RFS,R6077VNZ4,RGWXX65C,BM1390GLV-Z,RBR1VWM60A,BD14215FVJ-LA,BM6437X SERIES,QH8KXX,BD52W05G-C,R6055VNX3,LTR SERIES,BM2P06XMF-LBZ SERIES,SCT4036KR,RFL30TS6D,BM2LEXXXFJ-C,BD900N1WEFJ-C,RFS60TS6D,BD733L05G-C,LTR50,BD933N1WEFJ-C,SCT4062KE,RB168VWM-30,SCT4036KW7,BM2SC12XFP2-LBZ SERIES,BM64374S-VA,BD950N1W,BD725L05G-C,BM2LE040FJ-C,R6004RND3,BD933N1W,BD730L05G-C,BD750L05G-C,BM2SC121FP2-LBZ,BM2SC122FP2-LBZ,BD900N1,BD933N1G-C,BM2P061LF-Z,BD52W02G-C,SH8KC6,LTR,BM64375S-VA,SH8KC7,BM64377S-VA,BD933N1EFJ-C,BD950N1EFJ-C,BM2LE080FJ-C,SH8MX5,QH8MB5,SCT4062KW7,MCRL SERIES,R60XXVNX,BV1LEXXXEFJ-C SERIES,RB168VWM100,R60XXRNX,RBLQ2VWM10,BD950N1G-C,LTRL,SCT4026DW7,RGW60TS65CHR,BV1LE040EFJ-C,R6055VNZ4,BM2P060MF-Z,RFS60TZ6S,RFS30TZ6S,BD900N1WG-C,CSL1901 SERIES,SH8KB7,RB068VWM-40,SH8KB6,RB068VWM-30,BV1LE160EFJ-C,RFL30TZ6S,BM2LEXXXFJ-C SERIES,QH8MC5,CSL1901YW,BD1421X-LA,BV1LEXXXEFJ-C,RFL60TZ6S,R6013VND3
ROHM(罗姆)工业设备用产品选型指南(英文)
目录- Company Profile and Industrial Products Introduction Industrial Device Featured Products ICs Products Discretes Device /Modules Products Industrial Products Part Number Index
型号- BD7673AG,SMLEN3BC8T,BA4560RFVM,VREF25,RBQ20NS65A,RFN20NS6S,BM2LB300FJ-C,BA4560RFVT,BA4558YF-M/YFV-M/YFVM-M,GMR6432,BD7602GUL,RFUH20NS3S,BD82001FVJ-LB,SMF26V,MD56V72161C-XXTAP,RB058LAM150,BD50FA1MG-M,BD9109FVM-LB,RB088LAM-60,RB238NS150,SML-D12Y8W,VREF15,BR25H128,SML-P11DT,VS17VUA1LAM,SML-P11DR,RFUH20NS4S,RGTH40TK65,STM 431J,SCT2280KE,BA82904YFVM-C,CSL1301R2T,ECO 200,BA2902YF-LB,BA4560YFV-M,RB298T100,BD46EXX1G-M,SMF24V,BU7250G,SML-D12U1W,BD71L4LG-1,BR25H160,BR25A512,RGCL80TK60,RGPR20BM36HR,BD12732FVM,BA2903F/FV/FVM,BD12732FVJ,PTM 330,BU7251SG,BA2901YFV-M,BU21181FS,BU7251G,BD87A34FVM,LF-3011VA/VK,BU7462FVM,BD12732FVT,BD52XXG-2C,LM2903F,RBR30NS30A,BU7291G,MD56V62161M-XXTAL42X,LM339F,MD56V72161C-XXTAL42X,BA2901YFV-C,BA2902SF,SMF22V,SML-D12Y3W,LAP-601DB/DL,LAP-301DB/DL,BD2066FJ-LB,SCT2160KE,BAXXDD0T,SCM-013RT,LM2904F,BAXXDD0W,BU9829GUL-W,PTM 210J,SML-H12V8T,BU7294F/FV/SF/SFV,BA4510F/FV,RFN20NS4S,RFVS8TG6S,BU7262NUX,ML630Q464,SMLD12EN1W,ML630Q466,LMR342FJ,TLR342FJ,RF501BM2S,MMBZ16VAL,UCR006,SMF20V,SML-D13MW,BU7294SFV,BU7294F,RB168LAM150,RB238NS-30,LMR342FV,RFN6T2D,BD7220FV-LA,BD9E303EFJ-LB,LMR982FVM,SCS215AJ,RFN20NS3S,BV1LB300FJ-C,SCS215AM,BUXXSD2MG-M,SCS215AG,BR25A1M,SML-S13RT,BD37210AMUV,BD4271HFP-C,SCS215AE,BD45XX1G,BD52XXG-2M,RBR2LAM30A,BA4560F,BM2P0161,PTM 430J,RB238NS-40,RBR5L30B,RBR5L30A,RSX501LAM20,SML-D13MA,RBR2MM30B,BU7486SFV,RB228T150,RBR2MM30A,BM1050AF,LMR934FJ,BU7252SFVM,VS9V0UA1LAM,RBQ15BM100A,BU7486SF,PML2550,BDXXIA5WEFJ,BU7233SF,PV4220,BA2902FV,LMR934FV,SMF5V0,BU9897GUL-W,BD3539FVM,SML-D12U8W,LMR824F,RGPR50NS45HR,BAXXBC0,SML-P15UA,KX220,LM2903FJ,SMF SERIES,RBQ10BM100A,LM339FV,RBS3MM40B,SML-P11MT,RBR10BM30A,RBS3MM40A,SCS215KG,BD45EXX2G-M,SML-P15UT,SML-P11MR,RB058LAM-40,BA3404FVM,LM2903FV,BU7244YFV-C,BU7442FVM,MMBZ12VAL,BA82902YFJ-C,SCS220AM,SML-H12M8T,PML100,BA2901F/FV,RGTV60TK65D,RSX201L-30,BD42530EFJ-C,SCS220AJ,LBP-602DK2,SCS220AE,BU7464SF,SCS220AG,SML-D12D8W,TLR344F,RB058LAM-30,RF305BM6S,LMR822F,RFUH30TS6D,RBQ10NS100A,RBR3LAM60B,RBR3LAM60A,BD7F100HFN-LB,PV4210,BD48XXFVE,BD7XXL2FP3-C,LMR821G,BU7252F/FVM,BM2P051F,BD3508MUV,BU46KXX2G,RB238NS100,BU7486FVM,SML-D12D1W,BD1HC500FVM-C,BU7242SF,LM4559F,BA2903YF-C/YFV-C/YFVM-C,BD42500G-C,TLR342F,RB228T100,RB168LAM-30,ML610Q411PA,RFUH25TB3S,BM2P052F,LM324FVJ,MMBZ24VAL,LBP-602DA2/DK2,RGS00TS65EHR,ML62Q1366,ML62Q1367,VS22VUA1LAM,ML62Q1365,BD37A41FVM,BA4580RFJ,BD87A29FVM,BD42540FJ-C,RGT8TM65D,RFNL5TJ6S,BU7462SNUX,VS28VUA1LAM,BM63763S-VC,RB168LAM-40,BM63763S-VA,BA4560FJ,BM2P053F,SML-D13FW,BU46KXX4G,ML62Q1335,ML62Q1333,ML62Q1334,BU7264SF,BM63563S-VC,RFNL20TJ6S,BRCG016GWZ-3,RBR3L30B,BM63563S-VA,RBR3L30A,LBP-602MA2,BA3259HFP,BD00FA1WEFJ,LM339FJ,BU7266F/FV/FVM,RBQ30NS45B,BM2P054F,BD7691FJ,RBQ30NS45A,ML610482P,SCS308AHG,ML62Q1346,ML62Q1347,TLR341G,ML62Q1345,BRCB008GWZ-3,BA2115FVM,BD48LXXG,SML-D13DA,BU1S12S1AG-LB,RBR40NS60A,SCT3105KL,LMR324F/FJ/FV/FVJ,MR45V064B,RB058LAM-60,RFUH20NS6S,RB168LAM-60,SML-D13DW,LMR324FJ,RESD1CAN,ML62Q1432,ML62Q1430,BD35395FJ-M,ML62Q1431,SCS308AJ,BU7421SG,SCS308AM,BHXXRB1WGUT,BA4558RFV,BA4558RFJ,LMR324FV,BM6101FV-C,MMBZ20VAL,RBS1LAM40A,BD7690FJ,BD7684FJ-LB,MD60Y1G160A-XXLAP7AL,RFN10BM6S,BU97931FV-LB,ML62Q1441,ML62Q1442,SCT3060AL,VS11VUA1LAM,SML-D14DA,ML62Q1440,RGTH60TS65D,PML1632,RBQ10NS45A,SML-E12DW,BA4510FVM,RFN10T2D,SCS312AHG,RB088T-60,SML-D14DW,RB168L100,RGW80TS65,BD1HC500HFN-C,BD95601MUV-LB,LTR1632,RF2001NS3D,LM2903F/FJ/FV/FVJ/FVM/FVT,BU21077MUV,BA3474RFV,LM358F/FJ/FV/FVJ/FVM/FVT,LMR358F/FJ/FV/FVJ/FVM/FVT,BM1P067FJ,LAP-401DD/DN,BD71L3SHFV,BU6652NUX,RF2001NS2D,LM2904FVJ,RGS80TSX2DHR,SML-D12P8W,ML610Q360,RB088BM150,LM2904FVM,RB088LAM100,SCS210KG,RGPZ10BM40FH,ML610Q422P,BM2P091F,BUXXSA5WGWZ,RB088T-40,LM2904FVT,BD37A19FVM,SML-D15U2W,BA2904YF-M/YFV-M/YFVM-M,RFNL15TJ6S,SCT2450KE,LM4559FVM,RSX201LAM30,BD7562SFVM,LM4559FVJ,LMR341G,BA33D15HFP,BM60056FV-C,LM4559FVT,RB088T-30,BM2P092F,RB160LAM-90,RB168MM-60,RF1001T2D,PSR500/15,LTR2550,ML62Q1225A,BV1LC105FJ-C,ML62Q1225E,BA2902YF-C,RB168L150,BU7266SFV,BD9G341AEFJ-LB,BR25G640,BA2902YF-M,BM2P093F,RBR1L30A,RF301BM2S,RGS50TSX2DHR,LMR342F,RFNL5BGE6S,RGTV00TS65D,BD47XXG,RBR15BM30A,RB168MM-30,LM393FVT,BU42XXF,ML62Q1224A,SCS208AGHR,BU42XXG,LM393FVM,RGPR30BM40HR,CSL1001YT,BD7562FVM,ML62Q1224E,MSM56V16160NP,BD99A41F,BU7262FVM,LBP-602VK2,LM393FVJ,BA4558YF-M,BM2P094F,MD56V62161M-XXTAP,RGTH40TS65D,BD49KXXG,BA2901YF-M/YFV-M,PV2105,BDXXHC0WEFJ,BD6538G-LB,RB168MM-40,ML62Q1223A,BAXXCC0,SMLEN3WBC8W,ML62Q1223E,LM4559FV,LM4559FJ,RBR10BM40A,BDXXHA5MEFJ-M,BA3474YFV-C,BU7232SFVM,BD7561SG,SMLP13WBC9W,BA4560YFVM-M,BM2P095F,BU7421G,RBR1MM40A,LMR822FVJ,BDXXGA5MEFJ-LB,SCS206AJ,BA2902YF-C/YFV-C,LMR822FVM,LBP-602MK2,RB078BM30S,BA8391G,SCS206AG,BD7542F/FVM,BU45LXX2G,SCS304AM,BD45XX2G,SCT2H12NY,BA2903YF-M/YFV-M/YFVM-M,SCT2H12NZ,BD48EXXG,LMR822FVT,RB088LAM150,BD4XXM5W,SML-P15DA,BU7462F,BU7244F,BU7465HFV,BD7562SF/SFVM,SML-P15DT,MD56V82161A-XXTALQ2X,BU7487FV,SCT2080KE,RB168LAM100,SCS215AJHR,RB238NS-60,RBR5LAM30A,BD4XXM2W,LM2901F,RBS3LAM40B,MMBZ9V1AL,RBR20BM60A,RBS3LAM40C,BU45LXX4G,RBS3LAM40A,RGW00TK65D,RB088T150,BU7464F,SML-D12Y1W,BU
BASiC Semiconductor Launched Pcore™2 - Automotive Half-bridge SiC MOSFET Modules for Large-scale Vehicle Applications
The Automotive Half-bridge SiC MOSFET Module Pcore™2 is developed and launched by BASiC Semiconductor specially as power devices in the main traction drives, it features high power density and long service life in large-scale vehicle applications, such as electric cars.
新产品 发布时间 : 2023-04-12
电子商城
现货市场
服务
可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
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