UnitedSiC Announces 6 New SiC FETs, Available in 30/40/80/150mΩ Versions

时间： 2021-06-08 来源：UnitedSiC

May 20th, 2021, Princeton, New Jersey: UnitedSiC, a leading manufacturer of silicon carbide (SiC) power semiconductors, continues to expand its FET portfolio with the introduction of six new 650V and 1200V options, all housed in the industry-standard D2PAK-7L surface mount package. Available in 30, 40, 80, and 150mΩ versions, these latest SiC FETs represent another step forward in accelerating migration to SiC across applications such as server and telecom power supplies, industrial battery chargers, and power supplies, EV onboard chargers, and DC-DC converters.

The D2PAK-7L SiC FETs support significantly heightened switching speeds, with a Kelvin source connection improving gate drive return performance, as well as offering industry-leading thermal capabilities. Through the utilization of Ag Sintering, die attachments can be done on conventional PCBs as well as complex insulated metal substrate (IMS) arrangements. In addition, they exhibit excellent creepage and clearance figures of 6.7mm and 6.1mm respectively – meaning the highest degrees of operational safety can be assured even at elevated voltages.

“Through the fast switching capabilities of these latest FETs, alongside the superior thermal performance resulting from Ag sintering, we continue to bring performance, reliability, size and layout benefits to the power designer,” states Anup Bhalla, VP Engineering at UnitedSiC.

The new D2PAK-7L devices are fully supported by UnitedSiC’s FET-Jet Calculator™. Utilizing this free online resource, engineers can assess the different operational parameters needed for their application, carry out detailed performance comparisons and then identify which is the best SiC solution for their design requirements quickly and with confidence.

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本文由星晴123转载自UnitedSiC，原文标题为:UnitedSiC announces six new D2PAK-7L SiC FETs，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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