Exploit GaAs Advantages with UMS EC2612 Small GaAs Transistor

时间： 2021-10-28 来源：UMS

技术问答

UMS EC2612-99F is an ideal small GaAs transistor for low noise application and a switch up to very high frequencies.

The EC2612-99F is a very small high-frequency transistor exhibiting very high gain and very low noise figures from DC to millimeter-wave frequencies.

Fig.1

0.8dB Noise Figure with 12dB associated gain at 18GHz or 1.5dB Noise Figure with 9.5dB associated gain at 40GHz are typical figures of merit.

Such GaAs 0.15µm pHEMT transistor, typically biased at 2 to 3 Volts when used for very low noise amplification, may also be used as a source grounded ideal switch with extremely low parasitics and very wideband capability, the typical pinch-off voltage is -0.7Volt.

This small and compact GaAs transistor is then ideal for many mm-wave applications requiring high-performance low noise amplification and switching small signals up to very high frequencies.

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【产品】关断电压为-0.7伏的GaAs晶体管EC2612-99F，适用于低噪声应用和极高频率的开关

UMS的EC2612-99F是一种理想的小晶体管，从直流到毫米波频率都具有非常高的增益和非常低的噪声系数，适用于低噪声应用和极高频率的开关。

新产品发布时间 : 2021-11-24

【产品】赝配高电子迁移率晶体管，噪声系数低至1.5dB

EC2612-99F采用0.15μm PHEMT技术，增益9.5dB，可在+175℃环境下连续工作。

新产品发布时间 : 2017-06-03

New 3 stage LNA with Variable Gain Control——the UMS CHA2352-98F

The UMS CHA2352-98F is a 3 stage LNA covering 46 to 52 GHz，exhibits a high Gain of 21dB with 20dB Gain Control and a Low Noise Figure of 3.5dB with a high Output P1dB of 12dBm.

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UMS 射频MMIC芯片选型指南

描述- UMS has a comprehensive offer based on the supply of either ASIC or catalogue products, in the main based on the Company’s internal III-V technologies and through the provision of a comprehensive foundry service, allowing customers to directly create their own product solutions.

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产品型号	品类	Type	Loss(dB)	RF Bandwidth (GHz)min	RF Bandwidth (GHz)max	Isolation(dB)
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