【产品】30V/16A的N沟道增强型功率MOSFET SW055R03VLT,具有低导通电阻、低栅极电荷等特性
SW055R03VLT是芯派科技推出的一款基于先进的SAMWIN技术生产的N沟道增强型功率MOSFET,采用SOP-8封装,得益于该技术,器件具有更好的特性,包括快速开关时间、低导通电阻、低栅极电荷、特别是出色的雪崩特性。
特点:
高强度
低RDS(ON):
9.8mΩ(典型值)@VGS=4.5V
6.4mΩ(典型值)@VGS=10V
低栅极电荷(典型值32nC)
改进的dv/dt能力
100%雪崩测试
应用:
同步整流
锂电池保护板
逆变器
绝对最大额定值参数
*.漏极电流受结温限制
电气参数(TJ=25℃,除非特别说明)
注:
1.重复额定值:脉冲宽度受最大结温限制
2.L=0.5mH,IAS=14A,VDD=50V,RG=25Ω,起始TJ=25℃
3.ISD≤15A,di/dt=100A/μs,VDD≤BVDSS,起始TJ=25℃
4.脉冲测试:脉冲宽度≤300μs,占空比≤2%
5.基本上与工作温度无关
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本文由Vicky翻译自芯派科技,版权归世强硬创平台所有,非经授权,任何媒体、网站或个人不得转载,授权转载时须注明“来源:世强硬创平台”。
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SW068R68E7T N-channel Enhanced mode TO-220/TO-263 MOSFET
型号- SW068R68E7T,SW P 068R68E7T,SW B 068R68E7T
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电子商城
服务
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可定制位移传感器量程范围10~600mm,该YWD型位移传感器表面有带刻度的透明窗☐,每毫米的变化量误差不超过3ue/mm,可在静态、准静态和低频动态下工作。主要指标:非线性<0.2%;供桥电压<10v;测试精度:0.01mm。
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