12V Bi-Directional TVS Diode with 1pF Low Typical Capacitance
Applied Power's AR1211D3 is a 12V bi-directional TVS diode, utilizing leading monolithic silicon technology to provide fast response time and low ESD clamping voltage, making this device an ideal solution for protecting voltage sensitive high-speed data lines. The AR1211D3 has a low capacitance with a typical value at 1pF and complies with the IEC 61000-4-2 (ESD) with ±30kV air and ±30kV contact discharge. It is assembled into a lead-free SOD-323 package. The small size, low capacitance, and high ESD surge protection make AR1211D3 an ideal choice to protect cell phones, wireless systems, and communication equipment.
Features:
· 350W peak pulse power (8/20μs)
· Ultra-low capacitance: 1pF typical
· Ultra-low leakage: nA level
· Operating voltage: 12V
· Low clamping voltage
· Protects one power line or data line
· Complies with following standards:
– IEC 61000-4-2 (ESD) immunity test
Air discharge: ±30kV
Contact discharge: ±30kV
– IEC61000-4-5 (Lightning): 14A (8/20μs)
· RoHS Compliant
Applications:
· USB Ports
· Smart Phones
· Wireless Systems
· Ethernet 10/100/1000 Base T
Mechanical Characteristics:
· Package: SOD-323
· Lead Finish: Matte Tin
· Case Material: “Green” Molding Compound
· Moisture Sensitivity: Level 3 per J-STD-020
Absolute Maximum Ratings (TA=25℃ unless otherwise specified)
Electrical Characteristics (TA=25℃ unless otherwise specified)
Ordering Information:
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本文由宝丁转载自Applied Power,原文标题为:AR1211D3 1-Line Low Capacitance Bi-directional TVS Diode,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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应能微TVS&二极管选型表
应能微提供以下技术参数的TVS选型,VRWM:1V~80V,Cj Typ:0.15pF~3700pF,IR Max:0.02μA-600μA,PPP:10W-8000W;二极管选型,VRWM(V):45V,Cj Typ(pF):90pF、25pF。
产品型号
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品类
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UNI/BI
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Line Config
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VRWM(V)
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VBR Min(V)
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Cj Typ(pF)
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IR Max(μA)
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PPP(W)
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Package
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ASK45V1RD3
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Schottky Barrier Diode
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Bi
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1-Line
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45
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40
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90
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100
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0.32
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SOD-323
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选型表 - 应能微 立即选型
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整体外形尺寸小至0.6*0.3*0.3mm (DFN0603),工作电压范围覆盖2.5V~36V,电容值低至0.2pF,浪涌能力最高可达240安培,静电等级可达空气放电、接触放电±30KV。提供免费浪涌测试仪、静电测试仪测试。
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