Unitedsic Expands Schottky Diode Portfolio To Set New Benchmark in SiC Surge Current Robustness
October 26th 2020,Princeton, New Jersey: UnitedSiC, a leading manufacturer of silicon carbide (SiC) power semiconductors, has announced four new Junction Barrier Schottky (JBS) diodes to complement its FET and JFET transistor products. With the industry’s best surge current performance, the UJ3D 1200V and 1700V devices are part of the company’s 3rd generation of SiC Merged-PiN-Schottky (MPS) diodes.
Possessing a VF x Qc figure of merit (FoM) that is at least 12-15% better than what diodes from other manufacturers can achieve, these SiC SB diodes are highly optimized for power system designs requiring elevated efficiency levels and ultra-fast switching speeds. Having a >8.8mm clearance between the anode and the cathode means they are better at coping with high pollution environments where voltage transients are likely to be present. In high current situations, the novel PN junction arrangement featured enables the injection of additional charge carriers. Thanks to this, the diodes can withstand much higher surge currents than competing devices (up to 12x the rated current).
There is a 1700V 25A-rated option, plus three 1200V devices in 10A, 20A and 50A-rated options. Fully compliant with the AEC-Q101 automotive standard, all SiC diodes come in a compact TO247-2L package format and in die form. Applications that will benefit most from these new SiC diodes include fast-charge electric vehicle (EV) charging access points, industrial motor drives and solar energy inverters.
As Anup Bhalla, VP Engineering at UnitedSiC, explains: "Through the unique characteristics of the UJ3D1725K2, we can provide our customers with reliable, space-saving, cost-effective SiC diodes that have substantially better performance levels and assured quality, supported by high volume manufacturing."
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本文由青莲居士转载自UnitedSiC，原文标题为:UnitedSiC Expands Schottky Diode Portfolio，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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UnitedSiC 公司及产品介绍
描述- UnitedSiC Company & Product Introduction
型号- UF3C065040T3S,UF3C120080K3S,IPW65R045C7,TK39A60W,UF3SC065030D8S,UF3C065040B3,IPZ65R065C7,UF3N090350,UJ3D06520,STB43N65M5,UJ3C065080B3,UF3C SERIES,TK040Z65Z,UJ3C120040K3S,UF3C120040B7S,SCT3030ALGC11,UJ3N1701K2,UJ3N065025K3S,UJ3N065080K3S,UFS3C120040B7S,UF3SC120016K3S,STW69N65M5,UF3N170400,UF3C065030K4S,SCT3080ALGC11,STF42N65M5,UF3N120140,IPZA60R024P7,UJ3C065030B3,UF3SC065007K4S,UJ3D06516,CPM3-1200-0016A,UJ3D06510,UJ3D06512,UF3SC120040B75,UJ3D06508,UJ3C120150K3S,UF3C065080B7S,UF3SC120035,STB38N65M5,UF3C065080T3S,S5X,UJ3D06504,UF3C065040K3S,UJ3C120080K3S,IPP65R045C7,UJ3D06506,STW88N65M54,IPW65R095C7,STW38N65M54,UF3C120080K4S,UF3N090800,CPM3-1200-0010A,UF3SC065030B7S,TK35A65W5,UJC06505K,UJ3D1250,STF57N65M5,UJ3N120035,IPW60R037P7,SCTW35N65G2V,IPP65R095C7,UF3N06S600,UF3SC120016K4S,STW45N65M5,UF3C1201S0B7S,UJ3C065080T3S,UJ3D1205,UJ3N120035K3S,IPZ65R045C7XKSA1,UJ3D1202,UF3SC065040D8S,UJ3C065030K3S,UF3C065080B3,TK35N65W5,UJ3N065080,IPB65R045C7,UJ3N120070K3S,IPB65R099C6ATMA1,UJ3D06560,UF3C065030T3S,UF3SC120008Z,STW77N65M5,UFSC065007,SCTW90N65G2V,UJSC065007,UF3C120040K4S,UF3C065030B3,UF3C120150B7S,UJ3C SERIES,UF3C065040K4S,STW70N60M24,UJ3C065030T3S,UF3C065030K3S,UJC06505,UJ3D1220,S1F,UF3SC120009K4S,IPP60R040C7,UJ3N065025,UF3C120080B7S,UF3C120040K3S,UF3C120150K4S,S1F UF3C065040K4S,UJ3C065080K3S,TK040N65Z,SCT3017AL,TK31Z60X,UJ3C,UF3SC120008,UF3C,C2M0025120D,UJ3D1210,UF3N,UJ3N120070,UF3M06S300,SCT3022KL,UJ3D06530,IMZ120R030M1H,UJ3N,UF3C120150K3S,UJ3D SERIES,UF3SC065040B7S,CPM3-0900-0010A,UF3C065080K4S
UJ2D1210T xR SiC Series 10A - 1200V SiC Schottky Diode
描述- 本资料介绍了United Silicon Carbide, Inc.（USCi）生产的xR系列10A - 1200V碳化硅肖特基二极管UJ2D1210T。该二极管具有零反向恢复电荷和175°C的最大结温，适用于高频和高效率的电力系统，具有最低的冷却需求。
型号- XR SERIES,UJ2D1210T
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授权代理品牌：集成电路
授权代理品牌：分立元件
授权代理品牌：接插件及结构件
授权代理品牌：部件、组件及配件
授权代理品牌：电源及模块
授权代理品牌：电子材料
授权代理品牌：仪器仪表及测试配组件
授权代理品牌：电工工具及材料
授权代理品牌：机械电子元件
授权代理品牌：加工与定制
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