【产品】4Mx36&8Mx18&16Mx9 bit四同步流水线突发SRAM,,采用高性能6T CMOS技术
S7T4436T2M、S7T4418T2M和S7T4409T2M是NETSOL推出的150,994,944bit四同步流水线突发SRAM,S7T4436T2M为36位,4,194,304个字;S7T4418T2M,为18位,8,388,608个字;S7T4409T2M为9位,16,777,216个字。
在同一周期内通过独立的数据输出和输入端口支持DDR读写操作,可以实现四重操作。由于数据可以在K和K#的每个上升沿传送到SRAM中和从SRAM中传送出来,存储器的带宽得到了最大限度的提高,完全独立的读写端口消除了对高速总线周转的需要。读写地址在输入时钟K的交替上升沿锁存。数据输入和输出以及所有控制信号与输入时钟(K或K#)同步。读取数据参考回显时钟(CQ或CQ#)输出。
S7T4436T2M、S7T4418T2M和S7T4409T2M支持数据输入、输入时钟(K、K#)和BWx#的芯片端接(ODT)。芯片端接可以减少系统板上的电阻元件数量和复杂布线。因此,系统设计可以更简单且成本更低。公共地址总线用于访问地址以进行读写操作。对于读取和写入操作,内部突发计数器固定为2位。
同步流水线读取和提前写入可实现高速操作。通过使用R#和W#进行端口选择来完成简单的深度扩展。x18(x36)器件的BW0#和BW1#(BW2#和BW3#)引脚支持字节写操作,x9器件仅支持BW#引脚。
IEEE1149.1串行边界扫描(JTAG)简化了监控封装焊盘与系统的连接状态。
S7T4436T2M、S7T4418T2M和S7T4409T2M采用Netsol的高性能6T CMOS技术实现,并提供165pin的FBGA封装。多个电源和接地引脚可最大限度地减少地弹效应。
特性
• 采用1.8V+0.1V/-0.1V电源
• 用于宽输出数据有效窗口和频率扩展的DLL电路
• I/O 供电电压 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/ -0.1V for 1.8V I/O
• 独立的读写数据端口,可并发读写操作
• HSTL类型IO接口
• 完整的数据一致性,保证提供最新数据
• 同步流水线读取和自定时的提前写入机制
• 读延迟:2 个时钟周期
• 具有寄存器地址、控制和数据输入/输出
• 读写端口采用双数据率(DDR)接口
• 固定的2位突发读写操作
• 时钟可停止,可以减少电流
• 两个仅用于时钟上升沿的精确DDR时序输入时钟(K 和K#)
• 两个回显时钟(CQ 和CQ#),增强输出数据的可追溯性
• 支持数据有效引脚(QVLD)
• 数据输入,K、K 和 BWx 具有片上端接 (ODT)
• 单地址总线
• 具有字节写入(x9、x18、x36)功能
• 独立的读/写控制引脚(R 和 W)
• 简单的深度扩展,无数据竞争
• 可编程输出阻抗(ZQ)
• JTAG 1149.1 兼容的测试端口
• 165FBGA(11x15 球栅阵列 FBGA),封装尺寸为 13x15mm,无铅
关键参数
* -E(F)C(I)
E(F) [封装类型]: E-Pb Free, F-Pb
C(I) [工作温度]:C-商用,I-工业
逻辑框图
4Mx36
8Mx18
16Mx9
典型应用电路
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本文由深蓝的鱼翻译自NETSOL,版权归世强硬创平台所有,非经授权,任何媒体、网站或个人不得转载,授权转载时须注明“来源:世强硬创平台”。
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型号- S7K1618U2M,S6L8016W2M,S6R8008C1A,S6LXXXXXXX-PTSS,S7R320982M,S7K6418U2M,S6RXXXXXXX-PTSS,S7B163635M,S7M323635M,S6R3216W1M,S7R161882M,S6R2008C1A,S6R1608W1M,S7S6418U4M,S6L8016W1M,S7A641830M,S7M803635M,S7L3218U2M,S7S1618U4M,S7Q163664M,S7R163682M,S6L2016W1M,S7N321831M,S7R641884M,S6R1616C1M,S7S6436U4M,S6R1016C1A,S7M401835M,S7R320984M,S6L8008C2M,S6R8016W1A,S7Q161864M,S7R161884M,S7M801835M,S7S1636U4M,S7A161830M,S7S4436T4M,S7K6418T2M,S7N801831M,S7K1636U2M,S7I321882M,S6L1008C2M,S7J161882M,S6L2016W2M,S7S6418T4M,S7B643635M,S7A403630M,S6L2008C2M,S6R4008V1A,S7K6436U2M,S7S6436U2M,S7J641882M,S7S1618T4M,S7Q163662M,S7R641882M,S6L4016C2M,S7I643684M,S7T6436T4M,S7R441884M,S7L3236T2M,S7T1636T4M,S7S4436U4M,S7K3236T2M,S7N323631M,S6L1016W1M,S7I161884M,S7Q161862M,S7S3236T4M,S7T3236U4M,S7S4418T4M,S6R1008W1A,S6R2016C1A,S7M641835M,S7T3218T4M,S7M161835M,S7J323682M,S7I163684M,S6R4008W1A,S7R323682M,S7XXXXXXXX-ETSS,S7I643682M,S6L4008W1M,S7B641835M,S7K1618T2M,S7R441882M,S6R2008V1A,S6L8016C1M,S7L3236U2M,S7S4436U2M,S7XXXXXXXX-PTSS,S7S6418U2M,S6R1608V1M,S7A803630M,S7N803631M,S6R1008V1A,S7S4418U4M,S7B161835M,S7I641884M,S7A323630M,S6R4016C1A,S7L3218T2M,S7T3218U4M,S7R323684M,S7I163682M,S7B323635M,S6R2008W1A,S7B803635M,S7N403631M,S7L6418U2M,S6R1616V1M,S6R8008W1A,S7R321882M,S7S3236U2M,S7S4418U2M,S7R640982M,S6L8016C2M,S6R3208W1M,S7M643635M,S6R1608C1M,S7A801830M,S7L6436U2M,S7I641882M,S7S3218U4M,S7L1618U2M,S7A321830M,S7T6436T2M,S7T6436U4M,S7J321882M,S6R1016W1A,S7K3236U2M,S7T1636U4M,S6L2008W2M,S7T4436T4M,S6R8016C1A,S6R1616W1M,S7N641831M,S7R321884M,S7I161882M,S7B401835M,S7S3236U4M,S6L4016C1M,S7T3236T4M,S7M163635M,S6L1008W2M,S6L2008W1M,S6L8008W2M,S7L6436T2M,S7S3218T4M,S7N161831M,S6R1008C1A,S7S6436T4M,S7B403635M,S7R443682M,S7I321884M,S7M403635M,S7S1636T4M,S7T4436T2M,S7T4436U4M,S6R1016V1A,S6L4016W1M,S7R643684M,S7K1636T2M,S7N163631M,S7L1636T2M,S7T4418U4M,S7T6418T4M,S6R4008C1A,S7T4418T2M,S6R4016V1A,S6L4008C1M,S6L2016C1M,S7K6436T2M,S6L4016W2M,S7K3218T2M,S7I323684M,S7T1618T4M,S7J163682M,S6R2016W1A,S7J643682M,S7M321835M,S7R443684M,S7B801835M,S7L6418T2M,S7A643630M,S7A401830M,S7L1636U2M,S7R643682M,S7A163630M,S7T6418T2M,S7T4418T4M,S7T6418U4M,S7B321835M,S6L1016C1M,S6R4016W1A,S7N643631M,S7R163684M,S7T1618U4M,S7S3218U2M,S7N401831M,S7L1618T2M,S7K3218U2M,S7I323682M,S6R2016V1A,S7R440982M
Applications of MRAM? I work in a specific field and it's not easy to match the given applications with mine. How can I check Netsol's MRAM is suitable for my application?
The given applications of Netsol’s homepage is just several examples verified by Netsol and Netsol’s customers. Netsol’s STT-MRAM has advantages of low power consumption, various density, fast read/write speed and price competitiveness. With those advantages, Netsol’s STT-MRAM can be applied to any applications with which other memories like MRAM/FeRAM/SRAM/NOR flash/nvSRAM are currently used.
技术问答 发布时间 : 2024-05-28
NETSOL MRAM产品选型表
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型号- S3A1004R0M-HI1A,S3A8004R0M-JI1A,S3R4016V1M-UI70,S3A4004V0M-HI1A,S3A2004V0M-AI1A,S3R1016V1M-XI70,S3A1604V0M-AI1A,S3A8004V0M-JI1A,S3A4004R0M-HI1A,S3A1004V0M-HI1A,S3A2004R0M-AI1A,S3A8004V0M-AI1A,S3A1004V0M-AI1A,S3A2004V0M-JI1A,S3R2016V1M-UI70,S3A1604V0M-HI1A,S3A1604R0M-AI1A,S3A1604R0M-HI1A,S3A1004R0M-AI1A,S3A2004R0M-JI1A,S3R1016V1M-UI70,S3A8004R0M-AI1A,S3R2016V1M-XI70,S3A8004R0M-HI1A,S3A1004R0M-JI1A,S3R1608V1M-UI70,S3R1616V1M-XI70,S3R4008V1M-XI70,S3A4004V0M-JI1A,S3A4004R0M-JI1A,S3R1616V1M-PI70,S3R8016V1M-XI70,S3R8008V1M-UI70,S3A1004V0M-JI1A,S3A8004V0M-HI1A,S3R8016V1M-PI70,S3A1604V0M-JI1A,S3R1608V1M-XI70,S3R4008V1M-UI70,S3R1008V1M-UI70,S3R4016V1M-XI70,S3A2004V0M-HI1A,S3R2008V1M-XI70,S3A2004R0M-HI1A,S3R8008V1M-XI70,S3A4004R0M-AI1A,S3R1008V1M-XI70,S3R2008V1M-UI70,S3A1604R0M-JI1A,S3A4004V0M-AI1A
S3A1004V0M S3A2004V0M S3A4004V0M S3A8004V0M S3A1604V0M S3A1004R0M S3A2004R0M S3A4004R0M S3A8004R0M S3A1604R0M 1Mb ~ 16Mb SPI MRAM
型号- S3A8004V0M-AI1AT00,S3A1604R0M-JI1AT00,S3A4004R0M-AC1AT00,S3A1004R0M-JC1AT00,S3A4004V0M-JI1A000,S3A1004R0M-JI1AT00,S3A8004V0M-AC1AT00,S3A1604V0M-JI1AT00,S3A1004V0M-JC1AT00,S3A1604V0M-JC1AT00,S3A4004V0M-AI1AT00,S3A1004V0M-JI1AT00,S3A4004V0M-JC1A000,S3A4004V0M-AC1AT00,S3A2004V0M-AI1AT00,S3A8004R0M-JC1A000,S3A2004R0M-JI1AT00,S3A1604R0M-JC1A000,S3A1604R0M-JI1A000,S3A2004R0M-JC1AT00,S3A8004V0M-JC1A000,S3A8004R0M-JI1A000,S3A8004V0M-JI1A000,S3A2004V0M-JC1AT00,S3A1004R0M-AC1AT00,S3A2004R0M-AI1AT00,S3A4004R0M-JC1A000,S3A4004R0M-JI1A000,S3A1004V0M-AI1AT00,S3A2004V0M-JI1AT00,S3A2004R0M-JC1A000,S3A1004V0M-AC1AT00,S3A8004R0M-JI1AT00,S3A1604V0M-AC1AT00,S3A2004R0M-JI1A000,S3A4004R0M,S3A8004V0M-JC1AT00,S3A1004R0M-AI1AT00,S3A1604V0M-AI1AT00,S3A2004V0M-JC1A000,S3A1604R0M-AI1AT00,S3A2004R0M-AC1AT00,S3A8004V0M-JI1AT00,S3A4004R0M-JC1AT00,S3A2004V0M-JI1A000,S3A1604V0M-JI1A000,S3A1004R0M-JI1A000,S3A1604R0M,S3A1004V0M,S3A4004V0M,S3A4004R0M-JI1AT00,S3A1604V0M,S3A8004R0M-JC1AT00,S3A1604R0M-AC1AT00,S3A1004R0M,S3A4004V0M-JC1AT00,S3A4004V0M-JI1AT00,S3A2004V0M-AC1AT00,S3A1004R0M-JC1A000,S3A2004V0M,S3A8004R0M-AI1AT00,S3A1604V0M-JC1A000,S3A8004R0M,S3A8004R0M-AC1AT00,S3A8004V0M,S3A2004R0M,S3A1004V0M-JC1A000,S3AXXXXXXX-XXXXXXX,S3A1604R0M-JC1AT00,S3A4004R0M-AI1AT00,S3A1004V0M-JI1A000
Compatibility of MRAM? I'm using a memory now and how I can figure out my current memory is compatible with which Netsol's MRAM?
Netsol’s MRAM supports Serial Peripheral Interface and Parallel Peripheral Interface with package type of 8WSON, 8SOP, 48FBGA, 44TSOP2 and 54TSOP2. Netsol’s SPI MRAM is compatible with SPI FeRAM, SPI NOR flash, SPI nvSRAM and other vendors’ MRAM because of the same footprint with them. Netsol’s PPI MRAM with 48FBGA, 44TSOP2, and 54TSOP2 packages is compatible with PPI FeRAM, Low-power SRAM, and PPI nvSRAM.
技术问答 发布时间 : 2024-05-28
Magnetic field environment? My product can be exposed to various magnetic field environment conditions. Where can I check with which condition Netsol's MRAM can be operated properly?
Netsol tested Netsol’s MRAM in a 300-Gauss environment to ensure that there is no abnormality in its operability.
技术问答 发布时间 : 2024-05-28
S6R4016WEB S6R4008WEB 4Mb Async. FAST SRAM B-die Asynchronous FAST SRAM with ECC 1.65V ~ 3.6V Datasheet
型号- S6R4008WEB-UI10,S6R4016WEB-XI08,S6R4016WEB-UI10,S6R4008WEB-UI08,S6R40XXWEB,S6R4016WEB-XI10,S6R4008WEB,S6R4016WEB-UI08,S6R4016WEB
NETSOL Product List
型号- S7B323635M,S6R1008C1A,S6L8016W2M,S6R8008C1A,S3R2008V1M,S7B403635M,S6R2008W1A,S7B803635M,S7M403635M,S7N323631M,S7B163635M,S7N403631M,S6R1016V1A,S7M323635M,S6L1016W1M,S6L4016W1M,S6R1616V1M,S6R8008W1A,S6R2008C1A,S7N163631M,S6L8016W1M,S3R8016V1M,S6R1008W1A,S6R2016C1A,S6R4008C1A,S7M803635M,S6R4016V1A,S3R1008V1M,S7A801830M,S7M161835M,S3R3208V1M,S6L4016W2M,S3R1608V1M,S6R2016W1A,S6R4008W1A,S3A3204R0M,S3R4008V1M,S7A321830M,S6L2016W1M,S3R2016V1M,S7N321831M,S6R1616C1M,S3A3204V0M,S6R1016C1A,S3A4004R0M,S7M321835M,S7M401835M,S6R8016W1A,S7B801835M,S6R2008V1A,S6R1016W1A,S7M801835M,S7A161830M,S6R8016C1A,S3R8008V1M,S3A1604R0M,S7N801831M,S6R1616W1M,S7A401830M,S3A1004V0M,S3A4004V0M,S3A1604V0M,S3A1004R0M,S7B401835M,S6L2016W2M,S3R1616V1M,S3R1016V1M,S7A803630M,S7A163630M,S7N803631M,S7M163635M,S6R1008V1A,S7B321835M,S3A2004V0M,S6R4016W1A,S7A403630M,S3R3216V1M,S3A8004R0M,S6L8008W2M,S3R4016V1M,S7B161835M,S3A2004R0M,S3A8004V0M,S6R4008V1A,S7A323630M,S7N401831M,S6R4016C1A,S7N161831M,S6R2016V1A
Magnetic shielding of MRAM? Does Netsol take measures such as shielding the MRAM chip or package? Do I have to consider any extra shielding in my product?
Netsol does nothing about the shielding because it’s not required. So you don’t have to take any extra effort for shielding issue.
技术问答 发布时间 : 2024-05-28
NETSOL STT-MRAM选型表
Netsol的Serial STT-MRAM具有非易失特性和几乎无限的耐用性。对于需要使用最少数量的引脚来快速存储、检索数据和程序的应用程序而言,是最为理想的存储器。适用于工业设备中的代码存储、数据记录、备份和工作存储器。可替代 Flash、FeRAM 、nvSRAM等,具有卓越的性能和非易失特性。容量从1Mb~16Mb,电源供应 :1.8V(1.71V~1.98V)或3.3V(2.7V~3.6V),具有SDR和DDR串行接口兼容性的单线、双线和四线SPI,数据保存期 :10年,写入耐力 : 10的14次方,工业标准引脚及封装 :8WSON、8SOP。
产品型号
|
品类
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Density(Mb)
|
Interfaces
|
Vcc(V)
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Frequency(MHz)
|
Package
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S3A1004R0M-AI1AT00
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SPI MRAM
|
1Mb
|
QSPI
|
1.8V
|
108MHz
|
SOP
|
选型表 - NETSOL 立即选型
NETSOL product 停产通知
型号- S6R8016W1A-UI10,S6R1616W1M-XI10,S6R1016W1A-UI10,S6R1016V1A-UI10,S6L1016W1M-UI55,S6L4008C1M-LI55,S6R2016W1A-UI10,S6R4008W1A-UI10,S6R2016V1A-UI10,S6L8008C2M-UI55,S6R4008V1A-UI10,S6L8016W1M-UI55,S6R4016W1A-XI10,S6R1008V1A-LI10,S6R1616V1M-YI10,S6L4016W1M-UI55,S6R1616W1M-YI10,S6L2008W2M-LI55,S6L4008W1M-LI55,S6R4008C1A-UI10,S6L1008C2M-LI55,S6R3216W1M-XI10,S6R4016W1A-UI10,S6R4016V1A-UI10,S6R2008W1A-UI10,S6L2016W1M-UI55
电子商城
服务
可定制电感最大电流100A,尺寸最小7 x 7 x 3.0mm到最大35 x 34 x 15.5 mm,工作频率100KHZ ~ 2MHZ,感值范围:0.15 ~ 100uh;支持大功率电感,扁平线电感,大电流电感,高频电感,汽车电感器,车规电感,一体成型电感等定制。
最小起订量: 5000 提交需求>
可定制ATA TE Cooler的冷却功率范围:35~800W;控温精度:≦±0.1℃;尺寸:冷面:20*20到500*300;热面:60*60到540*400 (长*宽;单位mm)。
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