New FET-Jet Calculator™: An Online Power Design Tool Helps Engineers Identify Optimal SiC FET Design Solutions
UnitedSiC, a leading manufacturer of silicon carbide (SiC) power semiconductors, has launched the FET-Jet Calculator, a simple, registration-free online tool that facilitates selection and performance comparison in different power applications and topologies. This new tool allows engineers to make design decisions quickly and with confidence.
In order to identify the optimal UnitedSiC device for their power design, users select their application function and topology, enter their design parameter details, and the tool automatically calculates switch current, efficiency, and losses, categorized by conduction, turn-on, and turn-off contributions. Operating temperature and heatsink rating are included as inputs, to show expected operating junction temperatures.
Users can explore the effect of changing conduction modes in the various topologies by varying storage inductors and switching frequency values. Additionally, single or paralleled devices can be selected to show the relative overall performance of devices with various current ratings.
The tool warns if a selection is not appropriate, such as when voltage rating is insufficient for the conditions and topology chosen, helping the user to rapidly arrive at a viable solution.
All UnitedSiC FETs and Schottky diodes can be selected from sortable tables, which include devices in TO-220, TO-247, TO-247/4L, DFN8x8 packages, and the recently launched Gen 4 750V devices.
Anup Bhalla, VP Engineering at UnitedSiC, comments: “Selecting the right device in the right power topology shouldn't be a barrier to power designers considering the switch to SiC. This is why we built the FET-Jet Calculator. For engineers working with SiC for the first time, or those looking for the best SiC device to fit evolving designs, the calculator is a quick and easy way to evaluate UnitedSiC FETs in a variety of power topologies – speeding up R&D by avoiding any wasted time creating advanced simulations for inappropriate devices. Just a few clicks put you on the right heading to arrive at an optimum design”.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由董慧转载自UnitedSiC,原文标题为:UnitedSiC launches new FET-Jet Calculator™,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
UnitedSiC提供1200V第四代SiC FET,具有出色的热能力,可助力找到您的高压功率设计的亮点
UnitedSiC(现名Qorvo)提供了1200V第四代器件,它们具有一系列导通电阻额定值,可满足通常使用800V总线的各种应用的需要。欢迎用新的1200V第四代SiC FET找到您的高压功率设计的亮点。
原厂动态 发布时间 : 2022-05-25
UnitedSiC‘s FET-Jet Calculator Taking The Guesswork out of SiC FET Selection
UnitedSiC‘s new FET-Jet CalculatorTM is free-to-use without any registration and enables a designer to select an application, topology, electrical design parameters and ambient temperature, and quickly try a device from UnitedSiC‘s range of SiC FETs and diodes with a chosen heatsink rating. Critical performance results are instantly calculated, including overall efficiency, with component losses separated out into dynamic and conduction contributions, along with junction temperatures and current stress levels. If a resulting voltage is above the rating of the selected part, a warning is given.
原厂动态 发布时间 : 2021-07-11
UnitedSiC Rediscovers The Perfect Switch with SiC FETs
Cascading silicon MOSFET and a SiC JFET is dubbed a ‘SiC FET‘ by the manufacturer and technology champion UnitedSiC. It has better figures of merit for overall losses than SiC MOSFETs or GaN HEMT cells.
原厂动态 发布时间 : 2021-07-17
【经验】SiC FET关断时VDS尖峰和振荡问题的解决方法
UnitedSiC的SiC FET能直接替代Si MOSFET,但其高开关速度也可能会使关断VDS电压产生尖峰和震荡,使系统的EMI变差。关断时的VDS尖峰和振荡产生的根本原因是高速开关过程中di/dt在杂散电感上产生了较高的感应电压。本文将给出并对比几种解决方案。
设计经验 发布时间 : 2020-11-02
UnitedSiC SiC FET/SiC JFET/SiC肖特基二极管选型指南
目录- Product introduction SiC FETs SiC JFETs SiC Schottky Diodes
型号- UJ3D06506TS,UJ3D1220KSD,UF3C065040T3S,UF3C120080K3S,UF3C065040B3,UJ4C075023K3S,UJ3D1210KS,UF3N090350,UF3C SERIES,UJ3C065080B3,UJ3C120040K3S,UJ3N1701K2,UF3N SERIES,UJ3N065025K3S,UJ3N065080K3S,UF3SC120016K3S,UF3C065080K3S,UJ4SC,UF3N170400,UF3C065030K4S,UF3N120140,UF3N065600,UF3N170400B7S,UJ3D06510TS,UJ3D06560KSD,SC SERIES,UJ3C065030B3,UJ3D1210K2,UF3SC065007K4S,UF3C120400K3S,UJ4SC SERIES,UF4C120053K4S,UJ3C120150K3S,UJ4C075060K4S,UJ3D1202TS,UF3C065080B7S,UJ3D1220K2,SC,UF3C065080T3S,UF3C065040K3S,UJ3C120080K3S,UF3SC,UF4C120053K3S,UF3C120080K4S,UF3N090800,UJ4C075018K3S,UJ3D1210TS,UF3SC065030B7S,UJ4C075023K4S,UJ3D06530TS,UJ4C075060K3S,UJ3N SERIES,UJ3N120035,UF4C120070K3S,UF3SC120040B7S,UF3SC120016K4S,UJ4C SERIES,UJ4C075018K4S,UJ3C065080T3S,UF4SC120030K4S,UJ3N120035K3S,UJ3D06504TS,UJ3C065030K3S,UJ3D1205TS,UF3C065080B3,UJ3N065080,UJ4SC075009K4S,UJ3N120070K3S,UJ4C075033K3S,UF3SC SERIES,UF4C120070K4S,UF3C065030T3S,UJ3D06508TS,UJ3D1210KSD,UJ3D06516TS,UJ3D06512TS,UJ3D1250K2,UJ4SC075006K4S,UF3C120040K4S,UF3C065030B3,UF3C120150B7S,UJ3C SERIES,UF3C065040K4S,UJ4C075044K3S,UJ3C065030T3S,UJ4C,UJ3C120070K3S,UF3C065030K3S,UF4C,UJ3D1250K,UJ3D06520TS,UF3SC120009K4S,UF4C SERIES,UJ3N065025,UF3C120080B7S,UF3C120040K3S,UF3C120150K4S,UJ3C065080K3S,UJ3D1725K2,UJ3N120065K3S,UJ3D,UJ4C075044K4S,UJ3C,UJ3D06520KSD,UF3N065300,UF3C,UF3N,UJ3N120070,UJ4SC075011K4S,UJ4C075033K4S,UJ3N,UF3C170400K3S,UF4SC120023K4S,UJ3D SERIES,UF3SC065040B7S,UF3C065080K4S
UnitedSiC has completed qualification of X-fab as additional 6” SiC epi wafer supplier(23-FINAL)
型号- UJ3D065200,UJ3D1205,UF3N120035P,UJ3D1202,UF3SC120016,UF3N120035Z,UF3SC065040,UJ3N065080,UF3N090350,UJ3N120140,UF3N120140Z,UF3N065006Z,UJ3D1220Z,UF3SC065007,UF3SC065030Z,UJ3D06506Z,UF3N120140,UF3N065006,UJ3D12100,UJ3D1205Z,UF3N120035PZ,UF3SC065030,UF3SC065007Z,UJ3D06510Z,UJ3D06510,UJ3D06530Z,UJ3D065200Z,UF3N120035,UJ3D06508,UJ3D1220,UJ3D1210P,UJ3D1202Z,UJ3N065025,UJ3D12100Z,UJ3D1210Z,UJ3D06504,UJ3D1250Z,UJ3D06506,UJ3N065025Z,UF3SC065040Z,UF3N090800,UJ3D06508Z,UJ3N120035Z,UF3SC120016Z,UF3SC120009,UF3N065300,UJ3D06504Z,UF3N120008Z,UF3SC120040Z,UF3N090350Z,UJ3N120140Z,UJ3D1210,UJ3N065080Z,UF3N090800Z,UJ3D1250,UF3SC120040,UJ3D06530,UJ3N120035,UJ3D1210PZ,UF3N120008,UF3SC120009Z,UF3N065300Z
The 750V Class of UnitedSiC Gen 4 SiC FETS, Responding to Positive Feedback with More Choice
Control engineers want Feedback to be negative with a decent gain and phase margin, but marketeers prefer positive,The 750V Class of UnitedSiC Gen 4 SiC FETS, Responding to Positive Feedback with More Choice.
新产品 发布时间 : 2021-11-25
【经验】电机控制应用中三种不同dv/dt控制方法的比较
在电机控制等部分应用中,放缓开关期间的dV/dt非常重要。速度过快会导致电机上出现电压峰值,从而损坏绕组绝缘层,进而缩短电动机寿命。在本文中,UnitedSiC研发高级工程师比较了三种不同的dV/dt控制方法。
设计经验 发布时间 : 2020-09-17
【产品】UnitedSiC推出新的UF4C/SC系列1200V第四代SiC FET 非常适合主流的800V总线结构
UnitedSiC宣布推出新一代1200V碳化硅(SiC)场效应晶体管(FET)系列,这些产品在导通电阻方面具备业界出众的性能表征。新的UF4C/SC系列1200V第四代SiC FET非常适合主流的800V总线结构,这种结构常见于电动车车载充电器、工业电池充电器、工业电源、直流太阳能逆变器、焊机、不间断电源等应用。
新产品 发布时间 : 2022-05-21
UnitedSiC Introduces the Industry‘s First 750V SiC FETs Based on Advanced Gen 4 Technology
December 1, 2020: UnitedSiC has launched the first four devices based on its advanced Gen 4 SiC FET technology platform. As the first and only 750V SiC FETs currently available on the market, these Gen 4 devices enable new performance levels. Available in 18 and 60 mohm options, these new SiC FETs deliver unmatched FoMs with reduced on-resistance per unit area, and low intrinsic capacitance.
新产品 发布时间 : 2021-01-11
UnitedSiC (now Qorvo) Announces 1200V Gen 4 SiC FETs with Industry-best Figures of Merit
UnitedSiC announced the new 1200V Gen 4 SiC FETs with industry-leading figures of merit in on-resistance.
新产品 发布时间 : 2022-05-19
UnitedSiC Signs an Authorized Distribution Agreement with Sekorm
UnitedSiC(United Silicon Carbide) is a professional silicon carbide (SiC) power semiconductor manufacturer in the United States. It is the only SiC FET manufacturer in the world that is compatible with both SiC and Si drivers.
公司动态 发布时间 : 2021-12-07
现货市场
登录 | 立即注册
提交评论