A New Powerful 17.3-20.3GHz GaN High Power Amplifier for Space Ka Downlink Satcom Applications

时间： 2022-01-10 来源：UMS

技术问答

The UMS CHA8252-99F is a 3 stage 17.3-20.3GHz GaN High Power Amplifier（GaN HPA）.

This product exhibits 10W output power with a high PAE of more than 35% @ 16dBm input Power.

This circuit also features an excellent linear gain of 31dB.

Fig.1 The CHA8252-99F is a 3 stage 17.3-20.3GHz GaN High Power Amplifier

The CHA8252-99F is dedicated to Ka-Band Downlink Satcom applications, compatible with space constraints due to biasing @ 18V.

It is designed on a 0.15µm GaN HEMT proprietary technology.

Fig.2

Main features:

●Frequency range: 17.3-20.3GHz

●PAE: > 35% @ 16dBm Input Power

●Linear Gain: 31dB

●Pout: 40.5dBm @ 16dBm Input Power

●Return losses:Input 9dB / Output 7dB

●DC bias: 18V@300mA

●Chip size: 5x4x0.07mm

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