BASiC Semiconductor Launched Pcore™2 - Automotive Half-bridge SiC MOSFET Modules for Large-scale Vehicle Applications
The Automotive Half-bridge SiC MOSFET Module Pcore™2 is developed and launched by BASiC Semiconductor, especially as a power device in the main traction drives, it features high power density and long service life in large-scale vehicle applications, such as electric cars.
Part Number
The product utilizes a standard ED3 package, and adopts a double-sided pressure-assisted silver sintering connection process, high-density copper wire bonding technology, and high-performance AMB-Si3N4 ceramic substrate, and can be adapted to a standard CAV application-type package. This product effectively reduces the temperature rise and power loss of power devices in the main motor drive and fuel cell energy management systems in electric vehicles.
Pcore™2 family features low switching losses, high-speed switching, reduced temperature dependence, high reliability, and operating junction temperatures up to 175℃. Thanks to the same package size as the conventional silicon-based power module, Pcore™2 can replace IGBT modules of the same package to a certain extent, thus helping customers effectively shorten the product development cycle and improve the efficiency of the design process.
Product Features
Trench-type, low RDS(on) SiC MOSFET chip
Double-sided pressure-assisted silver sintering
High-performance Si3N4AMB ceramic substrate
Nanosilver dielectric layer with high thermal conductivity
High-density copper wire bonding technology
Die Top System (DTS) technology
Copper base plate direct-cooling structure
Adapted to standard CAV application-type package
Advantages
Devices service life extended by 5 times
Low switching loss
Low on-resistance
High-speed switching
Reduced temperature dependence
Operating junction temperature up to 175℃
High reliability
Applications
Motor drive in electric vehicles
Fuel cell power systems
Electric propulsion systems in mobile platforms
Solar inverter and energy storage systems
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本文由Vicky转载自BASiC Semiconductor News，原文标题为:Product News | Pcore™2 - Automotive Half-bridge SiC MOSFET Modules for New Energy Vehicles，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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定制液冷板尺寸5mm*5mm~3m*1.8m，厚度2mm-100mm，单相液冷板散热能力最高300W/cm²。
最小起订量： 1片 提交需求>
可根据用户的MOSFET管进行参数检测出具报告，静态参数最大电压:7500V、检测最大电流6000A；动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等，具备可靠性评估及老化实验能力。
实验室地址： 西安 提交需求>
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