What Is A Power Semiconductor Device?
Power semiconductor components are semiconductor components used for power control belonging to analog semiconductors, usually called power devices, including rectifier diodes, power transistors (power MOSFET, insulated gate bipolar transistors (IGBT)), thyristors, and gates. About turn-off thyristors (GTOs), triacs, etc. An element that enables current to flow without a loss (ideally) in one direction regardless of whether energization control is possible is called a "valve device", and a power semiconductor element belongs to the valve, and is called a "semiconductor valve device".
With the advancement of semiconductor technology, the response speed of handling high-power components has increased year by year, contributing to the miniaturization of the entire power control device. At the same time, from the standpoint of energy saving and low calorific value, the low-loss performance is improved, and the range of applications is expanded.
Fig.1
The power module and the control circuit and the drive circuit and the protection circuit that pay multiple components in one package are also modularized, including an intelligent power module (IPM) also.
In high-voltage applications, high-speed responsiveness is required while increasing resistance to electromagnetic noise and insulation performance, so semiconductor devices that use optical signals as trigger sources, such as optically triggered thyristors, are also used.
Future Development
In recent years, the application field of power semiconductor devices has expanded from industrial control and consumer electronics to new energy, rail transit, smart grid, frequency conversion home appliances, and many other markets, and the market scale has shown a steady growth trend. Judging from the current market demand, silicon-based MOSFET, silicon-based IGBT, and silicon carbide are the main products of power semiconductor discrete devices.
China is the world's most important consumer of power devices, and the main products of power device segments rank first in China's market share. Although major international manufacturers currently occupy the main market, their high-end products are too expensive to meet the rapidly exploding domestic market demand. As domestic enterprises gradually break through the technical bottleneck of high-end products in the industry, my country's dependence on imports of power semiconductor devices will be further weakened, and the import substitution effect will be significantly enhanced. Domestic enterprises are expected to deeply benefit from the domestic substitution process. With the rapid development of emerging industries, the scale of the power semiconductor market is accelerating.
Fig.2
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本文由三年不鸣转载自Yint News,原文标题为:What Is A Power Semiconductor Device?,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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FMOSP30P06,FMOSB3205,FMOSU06N90,FMOSU07N70B,FMOSP03N65,FMOSP3025A,FMOSPF10N90,FMOSP03N60,FMOSU07N70A,FMOSP40N10,FMOSU410,FMOSPFA05N60,FMOSP40N15,FMOSP03N70,FMOSAJ2352,FMOSU05N60KA,FMOSP04N60KA,FMOSU002NM65,FMOSU413,FMOSP04N60KB,FMOSP04N60KC,FMOSU08N50B,FMOSPFA05N65,FMOSP10N65K,FMOSUA09NM65,FMOSPFA02N65KA,FMOSP15N60,FMOSU830KA,FMOSU830KB,FMOSAC50P04,FMOSPF10N80,FMOSU21P04A,FMOSD36N10,FMOSAJ2340,FMOSU420,FMOSD630A,FMOSAC60N03,FMOSAC60N06,FMOSAC60N05,FMOSPFA05N50,FMOSP02N40K,FMOSU012N60Q,FMOSU03N25Z,FMOSB20N06,FMOSD02N30Z,FMOSP12N25V,FMOST01NM65,FMOSB09P10,FMOST01NM60,FMOSD08N40K,FMOSPX23N50E,FMOSU90N03A,FMOSPFA05N80,FMOSAC08NM65B,FMOSU80N06,FMOSP17N50K,FMOSU9435,FMOSA01N70,FMOSPF10N65,FMOSU01N60Q,FMOSAG03N25Z,FMOSPF10N60,FMOSU45P03,FMOST01NM70,FMOST16N15,FMOSU408,FMOSPFA03N60K,FMOSU01N60Z,FMOSQ07N10A,FMOSU80N10,FMOSPFA05N70,FMOSU02N40K,FMOSU08NM70A,FMOSU01N60A,FMOSAJ2305A,FMOSAJ4502,FMOSAJ2321,FMOSU405,FMOSU55N03,FMOSAC25P10,FMOSU01N60K,FMOSQ30N10,FMOSAC03N06,FMOSU06N50,FMOSU454,FMOSK05P04M,FMOSD24N06,FMOSAJ2312,FMOSAC03N10,FMOSAJ2316,FMOSU21P04,FMOSD03N100,FMOSU452,FMOSG1333,FMOSL654,FMOSQ30N04,FMOSU43N03,FMOSU18N25,FMOSA05N10,FMOSU10N65C,FMOSL8205,FMOSU06N65,FMOSPW60N10M,FMOSU09NM50A,FMOSU06N60,FMOST005N65,FMOSPFA05N90,FMOSPW33N25,FMOSP06N65KA,FMOSP03N40KA,FMOSD12N10,FMOSAJ2302,FMOSAJ2301,FMOSAG12NP03,FMOSAJ2304,FMOSAG05P04M,FMOSAJ2306,FMOSQ30N06,FMOSAJ2305,FMOSAJ2308,FMOSPF24NM65,FMOSQ4509,FMOST04N20,FMOSAJ2309,FMOSU06N70,FMOSPX60NM60,FMOSB07N70,FMOST04N03,FMOSPFA10N60Z,FMOSAJ015N10,FMOSAJ9435HZ,FMOSA05N06,FMOST02N60Q,FMOSPX60NM65,FMOSP64N04,FMOSU05NL70,FMOSB76N15,FMOSK02P06,FMOSU436,FMOSD01N50A,FMOSAG16N15,FMOST02N60K,FMOSPFA10N60K,FMOSD01N50K,FMOSUA3004,FMOSAG16N10,FMOST02N60D,FMOSU06N80,FMOSK302,FMOSU12N25V,FMOSPFA730K,FMOSB07N65,FMOSPW90N10,FMOSAG04N30,FMOSPFA10N60A,FMOST04N20Z,FMOSAC2003,FMOSAC5504,FMOSU02NM50A,FMOS1013T,FMOSPF08N40K,2N7002E,FMOSD28N03,FMOSU06N10,FMOSB540,FMOSU05N25Z,FMOSPF10N90B,2N7002T,FMOSD18P06,FMOS001P20,FMOSAC80N03,FMOSAC80N06,FMOSK351,FMOSU60N10M,2N7002K,FMOSPFA05N65A,FMOSP50P10,FMOS1012T,FMOSAG28N03,FMOSP08N100,FMOSPFA05N65K,FMOSAI2158,FMOSAC80N09M,FMOSPFA01N90,FMOSK04N10,FMOSU09N70A,FMOSD16N10,FMOSU03N65A,FMOSP60N10,FMOSU03N65B,FMOSU03N65C,FMOS002P06E,FMOSAJ6302,FMOSL606P,FMOST005N25,FMOSPFA10N65Z,FMOS001P10,FMOSP3025,FMOSD04N40,FMOSP03N06,FMOSAG3404,FMOS047N03,FMOSQ4953A,FMOSAG3400,FMOSPFA10N65A,FMOSPFA10N65K,FMOSU04NM60A,FMOSPX60N10,FMOSAG3409,FMOSU75N03,FMOSP60N03,FMOSP740A,FMOSAC2054,FMOSP60N05,FMOSP60N06,FMOSU08P03,FMOSP60N08,FMOSPWA24NM65,FMOSUC50P10,FMOSPWA24NM60,FMOS001P03,FMOSU18N20,FMOSP5210,FMOSPFA02N40K,FMOST02P50,FMOSAI0015N03,FMOSAP410,FMOSQ80N09M,FMOSP50P06,FMOSK9435H,FMOSD75P03,FMOSPFA50N06,FMOSU06N40,2N7002Z,FMOSAC80N07A,2N7002W,FMOSAJ4101,FMOSD04N60,FMOSAC45P03,FMOSAM7401,FMOSAC80N10,FMOSU484,FMOSPX80N06,FMOSA01N60,FMOSA01N65,FMOSAC23N15,FMOSAC55N06,FMOSAC6401,FMOSAC6402,FMOSU02N90,FMOSAM351,FMOSP15N06,FMOSM2311,FMOSB8010,FMOSAM3055,FMOSP06N90Z,FMOST005NM70,FMOSQ02NM65A,FMOSB15N65,FMOSQ10N10,FMOSU07NL70,FMOSAJ035N10,FMOSAC2305A,FMOSPFA17N50K,2N7002DW1,FMOSD40N025,FMOST005NM65,FMOST005NM60,FMOSM2305,FMOSH008N02Z,FMOSD03N50K,FMOST02P40,FMOSP15N10,FMOSAG2513,FMOSD02N70A,FMOSAC108N03,FMOSD02N70K,FMOSPFA03N65K,FMOST01N40A,FMOSHBSS84ZT,FMOSP15N25,FMOSB30P06,FMOSP15N20,FMOSAM001P03,FMOSPFA04N100A,FMOSU01N65Q,FMOSAG2502,FMOSAM02N10,FMOSU06NM60A,FMOSPX24NM60,FMOSU04NM65A,FMOST12N10,FMOSAJBSS139Z,FMOSPX11N80,FMOSACBSS84Z,FMOSP17P10,FMOSQ09N10,FMOSP17P12,FMOS2302A1,FMOSAC3416A,FMOSG001P03,FMOSU15N06,FMOSD05N65K,FMOSD34,FMOSAG10P02,FMOS3418V,FMOSB36N10,FMOSU02N65KA,FMOST9971P,FMOSD05N65B,FMOSU09NM50,FMOSD05N65A,FMOSU03N10,2N7002KW,FMOSAG20N03,FMOSPFA20NM65,FMOS01P10,FMOSQ25N10,FMOSU15N10,FMOSU12N60K,FMOSPFA830,FMOSP9530,FMOSAG3458,FMOSK9435HZ,FMOSQ9930M,FMOSP13N40K,FMOSU03N30,FMOSPW08N120,FMOSQ5003Z,FMOSU03N25,FMOST02P06,FMOSAJ2035Z,FMOS2303P,FMOSPFA07N65A,FMOSP6016,2N7002KA,FMOSPFA07N65C,FMOSAG3008,FMOSAJ001P03,FMOSAG3006,FMOSB12N65,FMOSAG2158,FMOSU03N70B,FMOSU04N50Z,FMOSU03N70C,FMOSAP01N10,FMOSAC001P03,FMOSU15N25,FMOSU05P20,FMOSAM410,FMOSU03N70A,FMOSD90N02,FMOSU15NM70A,FMOSD90N03,FMOS2302T,FMOSU04N50D,FMOSQ50N03,FMOSU15N30,FMOSU17P10,FMOSU04N50B,FMOSPF05N50A,FMOS2302W,FMOSPFA05N60KA,FMOSP634,FMOSAF21NM70,FMOSAMBSS84Z,FMOSD40N03A,FMOSU03N50,FMOSU06N10Z,FMOSAC2035Z,FMOS2301T,FMOSU34,FMOSAM4414,FMOSP06N60KA,FMOSPFA05N60A,FMOSP630,FMOSQ15P03,FMOSU15N20,FMOSQ15P04,FMOSA005NM65,FMOSG7401,FMOSPFA20NM70,FMOS2301W,FMOSA005NM60,FMOSU60N10,2N7002KWAI,2N7002KWAG,FMOS2301A,2N7002KWAL,2N7002KWAM,2N7002KWAJ,FMOSU50P06,FMOSAC6006,FMOSU11NM65,2N7002KWAC,FMOSU09NM95,FMOSPFA06N40K,FMOSAJ6354,FMOSU50P04,2N7002KWAP,FMOSD04N70,FMOSPFA,2N7002KWAN,FMOSP730K,FMOSU80N075A,FMOSP12N10,FMOSU40N025,FMOST02NM65A,FMOSAC75N06,FMOSAG3416,FMOSAG3413,FMOSP05N70K,FMOSA9435HZ,FMOSAC6016,FMOSAG3419,FMOSAG3418,FMOSAC75N03,FMOSAG40N025,FMOSPX15NM65,FMOSQ4812Z,FMOSU60N06,FMOSD04N80,FMOSAG3443,FMOSU09NM70,FMOSP12N65A,FMOSP12N65B,FMOSP36N05,FMOSPW460,FMOSPFA13N65,FMOSD04N90,FMOSD06N40A,FMOSAC035N10,FMOSPF13N40K
昕感科技1200V/7mΩ SiC MOSFET,采用TO247-4PLUS封装,方便实现大电流并联
昕感科技在低导通电阻器件的开发上走在了行业的前列,于2023年推出一款1200V/7mΩ SiC MOSFET产品N2M120007PP0,使用了TO247-4PLUS封装降低器件热阻。该产品工作电流可达300A以上,具有正温度系数,可方便实现大电流并联。同时,昕感新品的漏电流极低,具备优越的高压阻断特性,方便用户使用和节省成本。
Sekorm Became an Official Authorized Distributor of PANJIT
Sekorm is an official authorized first-level distributor of PANJIT, acting as a distributor of PANJIT‘s SBD, rectifier diodes, TVS&ESD, Zener diodes, MOSFETs, etc.
PARA LIGHT Electronics Seizes New Market Opportunities of High-Performance IGBT
PARA LIGHT recently announced the launch of five 650V and 1200V IGBT discrete products aimed at applications such as servo motor drive control, photovoltaic inverters, industrial energy storage, and power factor correction (PFC) of power supplies. These new products are expected to garner significant attention from customers due to their higher performance and power density.
【经验】碳化硅的Mosfet如何更好解决静电问题?
碳化硅的MOSFET相比传统硅MOSFET具有更高的击穿电场强度和较低的漏电流。因此在一定程度上能够更好地抵御静电问题。本文音特电子将介绍碳化硅的Mosfet如何更好解决静电问题?
WAYON‘s 500V-1500V, Current Covering 2A~40A VDMOSFET for More Power Control
Relying on the mature customer base of power and industrial control, WAYON has developed VDMOSFET products from 500V-1500V, with current covering 2A~40A and packages covering TO-251, TO-252, TO-262, TO-220/F, TO-247, TO-3PF.
IGBT 50A/75A 1200V Discrete for Industrial Control New Product Announcement
型号- DGL75N120CTL1J,DGL50N120CTL0D
电子商城
现货市场
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定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。
最小起订量: 1片 提交需求>
可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
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