Alliance Memory Provides Low-Power SDRAMs in a Wide Range of Densities and Package Options
ALLIANCE Memory’s SDRAM portfolio now features a wide variety of components that combine low power consumption with power-saving features to extend battery life in mobile devices.
Part Numbers: Please see the table below.
Availability: Samples and production quantities of Alliance Memory’s SDR (LPSDR), double data rate (LPDDR), and DDR2 (LPDDR2) devices are available now.
Key Specifications and Benefits:
SDR (LPSDR) SDRAMs
Power consumption of 1.8V
Densities of 128Mb, 256Mb, and 512Mb
x16 and x32 organizations
54-ball and 90-ball FBGA packages
DDR (LPDDR) SDRAMs
Power consumption from 1.7V to 1.95V
Densities of 256Mb, 512Mb, 1Gb, and 2Gb
x16 and x32 organizations
60-ball and 90-ball FBGA packages
DDR2 (LPDDR2) SDRAMs
Enable ultra-slim designs
Power consumption of 1.2V/1.8V
Densities of 1Gb, 2Gb, and 4Gb
x16 and x32 organizations
134-ball FBGA package
Power-saving features:
Auto temperature-compensated self-refresh (TCSR) to minimize power consumption at lower ambient temperatures
Partial-array self-refresh (PASR) feature reduces power by only refreshing critical data
Deep power down (DPD) mode provides an ultra-low power state when data retention isn’t required
Target Applications:
Internet of Things and consumer, industrial, and medical mobile devices
The Context: With the Internet of Things and the proliferation of mobile devices in the consumer, industrial, and medical spaces, Alliance Memory has made a commitment over the last few years to solidify its offering of low-power ICs. It began with the introduction of the company’s LPSDR SDRAMs in 2014, followed by its LPDDR devices in 2016, and LPDDR2 SDRAMs in 2017. Now Alliance Memory offers a complete low-power portfolio in a wide range of densities and package options to meet the high demand for these parts.
Product Datasheets:
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本文由咪猫转载自ALLIANCE News,原文标题为:Low-Power SDRAMs in a Wide Range of Densities and Package Options,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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ALLIANCE 存储器选型表
提供存储器、存储芯片、SRAM、SDRAM、DDR1、DDR2、DDR3、DDR4选型,VCC(V):0.6-5,MSL LEVEL:0-5,CLOCK(MHz):133-1866,可支持商业级/工业级/汽车级。
产品型号
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品类
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Product Family
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DENSITY
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ORGANISATION
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VCC(V)
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TEMPERATURE RANGE(°C)
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PACKAGE
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MSL LEVEL
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AS7C164A-15JCN
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存储器
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FAST-Asynch
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64K Fast
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8K x 8
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5V
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Commercial (0 ~ 70°C)
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3
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选型表 - ALLIANCE 立即选型
8Gb LPDDR4X SDRAM
描述- 本资料介绍了8Gb LPDDR4X SDRAM的特性、功能和应用。该内存芯片采用双通道架构,支持高速数据传输,具有双向差分数据选通、可编程读写延迟、片上ECC等功能。此外,还提供了详细的引脚功能描述、初始化和掉电序列、模式寄存器定义等内容。
型号- AS4C256M32MD4V-062BAN,AS4C256M32MD4V-062BANXX
无铅/无卤素DDR3 SDRAM(工业级)可靠性鉴定报告(256M×16,25nm SDRAM AS4C256M16D3C-93BIN/-10BIN/-12BIN)
描述- 本报告为Alliance Memory Inc.生产的256M×16 DDR3 SDRAM(AS4C256M16D3C-93BIN/-10BIN/-12BIN)的可靠性测试报告。报告详细介绍了产品信息、可靠性测试方法及结果,包括寿命测试、环境测试、ESD测试和闩锁测试。测试结果表明,该产品在高温、湿度、电压等极端条件下均表现出良好的可靠性,符合行业标准和客户需求。
型号- AS4C256M16D3C-12BIN,AS4C256M16D3C-10BIN,AS4C256M16D3C-93BIN,AS4C256M16D3C-XXBIN
Alliance Memory’s Featured Products at Electronica 2022: eMMCs/DDR4 SDRAMs/1.8V Serial NOR Flash/DDR3 SDRAMs
Compliant with the JEDEC eMMC v5.1 industry standard, Alliance Memory’s eMMC solutions integrate NAND flash memory with an eMMC controller and flash transition layer (FTL) management software in a single package for solid-state storage in consumer, industrial, and networking applications.
HYD4G16V4BA-B9A商用和工业DDR4 4GB SDRAM
描述- 该资料详细介绍了HYD4G16V4BA-B9A商业和工业级DDR4 4Gb SDRAM的特性、功能和应用。它涵盖了数据完整性、信号完整性、访问带宽、同步信号、节能与效率、可靠性与错误处理等方面,并提供了编程功能和封装信息。
型号- HYD4G16V4BA-B9A
Alliance New 16Gb DDR4 SDRAM Improved Performance Over Previous-generation DDR3 SDRAMs, with Higher Speeds and Transfer Rates of 1600MHz and 3200MT/s
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低功耗SDRAM的优势及应用
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无铅/无卤素SDR SDRAM(4M×32,63nM SDRAM AS4c4M32SA-6TcN/AS4c4M32SA-7TcN)可靠性鉴定报告
描述- 本报告为AS4C4M32SA-6TCN/AS4C4M32SA-7TCN(4M×32 SDR SDRAM,无铅/卤素免费)的可靠性测试报告。报告内容包括可靠性测试总结、产品信息、可靠性测试(寿命测试、环境测试、ESD测试和闩锁测试)以及结论。测试结果表明,该产品在短期和长期可靠性方面均表现良好,符合可靠性标准。
型号- AS4C4M32SA-7TCN,AS4C4M32SA-6TCN
New 2Gb/4Gb/8Gb LPDDR4 SDRAMs with on-chip ECC Offer lower Power Consumption
Alliance Memory has expanded its offering of high-speed CMOS mobile low-power SDRAMs with new LPDDR4 devices featuring on-chip ECC. For improved performance with higher power efficiency than previous-generation LPDDR3 SDRAMs, the 2Gb AS4C128M16MD4-062BAN, 4Gb AS4C256M16MD4-062BAN and AS4C128M32MD4-062BAN, and 8Gb AS4C256M32MD4-062BAN offer lower power consumption and faster speeds in the 200-ball FBGA package.
HYD32G32P5CA-B2N工业移动LPDDR4 8GB/16GB(DDP)/32GB(QDP)SDRAM
描述- 该资料详细介绍了HYD32G32P5CA-B2N型号的工业级移动LPDDR4 SDRAM产品。资料涵盖了产品特性、应用领域、封装信息、操作频率、电压和电源要求、初始化和关断程序、模式寄存器定义以及球脚分配等内容。
型号- HYD32G32P5CA-B2N
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