EPC‘s 100V, 35A eGaN IC EPC23102 Boosts Power Density and Simplifies Design
EPC announces the introduction of a 100V, 35A integrated circuit designed for 48V DC-DC conversion used in high-density computing applications and in 48V BLDC motor drives for e-mobility, robotics, and drones.
The EPC23102 eGaN IC is capable of a maximum withstand voltage of 100V, delivering up to 35A load current, while capable of switching speeds greater than 1MHz.
• Key features of the EPC23102 integrated circuit using EPC's proprietary GaN IC technology include integrated input logic interface, level shifting, bootstrap charging, and gate drive buffer circuits controlling 6.6mOhm RDS(on) high side and low side FETs configured as a half-bridge power stage.
• The EPC23102 features a thermally enhanced QFN package with a footprint of just 3.5mm x 5mm, offering an extremely small solution size for the highest power density applications.
When operated in a 48V to 12V buck converter, the EPC23102 delivers greater than 96% peak efficiency at 1MHz switching frequency and around 8 – 17A of continuous load current with a rated current of 35A.
"The ePower family of products makes it easy for designers to take advantage of the significant performance improvements made possible with GaN technology," said Alex Lidow, CEO and co-founder of EPC. "Integrated devices are easier to design, easier to layout, easier to assemble, save space on the PCB, and increase efficiency. Designers can use these devices to make lighter weight and more precise BLDC motor drives, higher efficiency 48V input DC-DC converters, higher fidelity class-d audio systems, and other industrial and consumer applications."
The EPC90147 development board is a 100V maximum device voltage, 35A maximum output current, and half-bridge featuring the EPC23102 ePower Stage IC. The purpose of this board is to simplify the evaluation process of the EPC23102. This 2" x 2" (50.8mm x 50.8mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
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本文由董慧转载自EPC，原文标题为:35 A GaN ePower Stage IC Boosts Power Density and Simplifies Design，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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