GaN Power Devices Achieve a High-Efficiency 48V, 1.2kW LLC Resonant Converter in a ⅛th Brick Size

时间： 2022-07-27 来源：EPC

技术问答

There is increasing demand for extracting more power from standard 48V bus converters for server applications' ever-increasing power requirements. GaN Power Devices allow a designer to achieve a converter's goals: high efficiency, small size & high current handling, ease, and high reliability. To whet your appetite, EPC designed a 1.2kW resonant converter demo board (EPC9174) in a 1/8th brick form factor that achieves an impressive 97.3% peak efficiency.

The LLC resonant topology of the EPC9174 consists of a full-bridge primary side and a center-tapped secondary side with parallel-connected synchronous rectifiers to reduce the conduction loss. A series-connected 2 × 2:1:1 matrix transformer integrated into a single core is designed. The high output current is distributed among multiple secondary stages, ensuring low interconnect inductance between the transformer and the synchronous rectifiers and reducing winding loss.

eGaN FETs are well suited for soft-switching LLC resonant converters mainly due to the very low gate charge (Q_g), the 5V gate operation, and low output capacitance of the FETs. The EPC9174 uses the 100V rated 2.2mΩ EPC2071, and 40V rated 1mΩ EPC2066 for the primary and secondary-side power devices, respectively.

The overall power loss and efficiency at 48V input and 12V output, including the housekeeping power consumption, is shown in the measured graph below:

The EPC9174 is a 48V input, 1.2kW output, 4:1 conversion ratio, LLC resonant converter in the ⅛th power brick size designed with GaN FETs to help jump-start your next design.

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本文由董慧转载自EPC，原文标题为:GaN Power Devices Achieve a High-Efficiency 48 V, 1.2 kW LLC Resonant Converter in a ⅛th Brick Size，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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EPC eGaN® FET Automotive Qualification Report EPC2252

型号- EPC2218A,EPC2204A,EPC2252

测试报告 - EPC - 2023/4/13 PDF 英文下载

Lidar Demonstration Board Drives Lasers with Currents up to 220A with Under 3-ns Pulses Using eGaN FETs

March 2021 — Efficient Power Conversion (EPC) announces the availability of the EPC9150, a 200V, high current, pulsed-laser diode driver demonstration board. In a lidar system, used to create 3-D maps for autonomous vehicle applications, speed and accuracy of object detection is critical. As demonstrated by this board, the rapid transition capability of the EPC2034C eGaN FETs provide power pulses to drive the laser diodes, VCSELs or LEDs up to ten times faster than an equivalent MOSFET.

新产品发布时间 : 2021-04-17

The Growing Ecosystem for eGaN®FET Power Conversion

型号- EPC2036,EPC2101,EPC2001C,LMG5200,FBS-GAM02-P-R50,EPC2106,EPC2016C,EPC9144,EPC2152,EPC2045,EPC2111,EPC8010,EPC9081,FBS-GAM01P-C-PSE,FBS-GAM02P-C-PSE

应用笔记或设计指南 - EPC - 2022/5/24 PDF 英文下载

Using GaN FETs with Controllers and Gate Drivers Designed for Silicon MOSFETs

技术文档 - EPC - February 2024 PDF 英文下载

The Power and Evolution of GaN: Bringing Precision Control to Surgical Robots with eGaN FETs and IC

Robotic surgical systems require a motor with high efficiency, minimal vibration, and precision control. eGaN FETs and ICs are ideal devices for sinusoidally modulated motor drives given their higher efficiency and higher operating frequency. eGaN FETs and ICs used in the motor control circuit yield higher precision and result in a more compact drive for the motors. This combination allows designers to design surgical robots that are more compact and with superior dexterity over MOSFET equivalent solutions.

应用方案发布时间 : 2020-07-06

【应用】基于eGaN FETs的150W/8Ω D类音频放大器应用案例

与MOSFETs相比，eGaN FETs的特性将使系统性能得到改善，显着提高了D类放大器的整体声音性能。EPC公司推出的EPC2016是高开关速度增强型GaN（eGaN）FET，与MOSFET相比具有更低的传导损耗，更快的开关速度和零反向恢复损耗，其应用于D类音频放大器时具有超高的音质和更高的经济效益。

应用方案发布时间 : 2018-06-06