GaN Power Devices Achieve a High-Efficiency 48V, 1.2kW LLC Resonant Converter in a ⅛th Brick Size
There is increasing demand for extracting more power from standard 48V bus converters for server applications' ever-increasing power requirements. GaN Power Devices allow a designer to achieve a converter's goals: high efficiency, small size & high current handling, ease, and high reliability. To whet your appetite, EPC designed a 1.2kW resonant converter demo board (EPC9174) in a 1/8th brick form factor that achieves an impressive 97.3% peak efficiency.
The LLC resonant topology of the EPC9174 consists of a full-bridge primary side and a center-tapped secondary side with parallel-connected synchronous rectifiers to reduce the conduction loss. A series-connected 2 × 2:1:1 matrix transformer integrated into a single core is designed. The high output current is distributed among multiple secondary stages, ensuring low interconnect inductance between the transformer and the synchronous rectifiers and reducing winding loss.
eGaN FETs are well suited for soft-switching LLC resonant converters mainly due to the very low gate charge (Qg), the 5V gate operation, and low output capacitance of the FETs. The EPC9174 uses the 100V rated 2.2mΩ EPC2071, and 40V rated 1mΩ EPC2066 for the primary and secondary-side power devices, respectively.
The overall power loss and efficiency at 48V input and 12V output, including the housekeeping power consumption, is shown in the measured graph below:
The EPC9174 is a 48V input, 1.2kW output, 4:1 conversion ratio, LLC resonant converter in the ⅛th power brick size designed with GaN FETs to help jump-start your next design.
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本文由董慧转载自EPC,原文标题为:GaN Power Devices Achieve a High-Efficiency 48 V, 1.2 kW LLC Resonant Converter in a ⅛th Brick Size,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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EPC提供增强型氮化镓半桥功率晶体管/增强型功率晶体管/功率晶体管的选型:配置:Dual Common Source、Dual with Sync Boot、Half Bridge、Half Bridge Driver IC、HS FET + Driver + Level Shift、Single、Single - AEC Q101、Single – Rad Hard、Single with Gate Diode、Single with Gate Diode – AEC-Q101、Dual Common Source - AEC Q101,VDS最大值(V):15~350V;VGS最大值(V):5.75~7V
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Configuration
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VDSmax(V)
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VGSmax(V)
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Max RDS(on) (mΩ)
@ 5 VGS
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QG typ(nC)
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QGS typ (nC)
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QGD typ (nC)
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QOSS typ (nC)
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QRR(nC)
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CISS (pF)
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COSS (pF)
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CRSS (pF)
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ID(A)
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Pulsed ID (A)
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Max TJ (°C)
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Package(mm)
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Launch Date
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Enhancement Mode Power Transistor
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Single
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15
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6
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30
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0.745
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0.23
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0.14
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0.42
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0
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86
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67
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20
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3.4
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28
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150
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BGA 0.85 x 1.2
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Apr, 2017
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Synchronous, Buck or Boost, digital controller
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