EPC Announces New eGaN Transistors and Integrated Circuits for Demanding Space Applications
EL SEGUNDO, Calif.— June 2021 — EPC announces the introduction of a new family of radiation-hardened gallium nitride transistors and integrated circuits. With higher breakdown strength, faster-switching speed, higher thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices. The lower resistance and gate charge enable faster power supply switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. Gallium nitride is also inherently radiation tolerant, making GaN-based devices a reliable, higher-performing power transistor option for space applications.
Applications benefiting from the performance and fast deployment of these products include power supplies for satellites and mission equipment, light detection and ranging (lidar) for robotics and autonomous navigation and rendezvous docking, motor drives for robotics and instrumentation, and ion thrusters for satellite orientation and positioning, as well as interplanetary propulsion of low-mass robotic vehicles.
The EPC7014, a 60 V, 340 mΩ, 4 APulsed, rad-hard eGaN® FET in a tiny 0.81 mm2 footprint, is the first in what will be a wide-range family of rad-hard transistors and integrated circuits. The EPC7014 has a total dose rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). These devices are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.
"EPC's GaN technology enables a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before," said Alex Lidow, CEO, and co-founder of EPC, "We are excited about this technology's ability to provide mission-critical components space and high-reliability markets."
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本文由董慧转载自EPC，原文标题为:EPC Announces New Family of Radiation-Hardened Enhancement-Mode Gallium Nitride (eGaN) Transistors and Integrated Circuits for Demanding Space Applications，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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EPC eGaN®FET/晶体管选型表
EPC提供增强型氮化镓半桥功率晶体管/增强型功率晶体管/功率晶体管的选型：配置：Dual Common Source、Dual with Sync Boot、Half Bridge、Half Bridge Driver IC、HS FET + Driver + Level Shift、Single、Single - AEC Q101、Single – Rad Hard、Single with Gate Diode、Single with Gate Diode – AEC-Q101、Dual Common Source - AEC Q101，VDS最大值（V）：15~350V；VGS最大值（V）：5.75~7V
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品类
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Configuration
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VDSmax(V)
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VGSmax(V)
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Max RDS(on) (mΩ)
@ 5 VGS
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QG typ(nC)
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QGS typ (nC)
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QGD typ (nC)
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QOSS typ (nC)
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QRR(nC)
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CISS (pF)
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COSS (pF)
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CRSS (pF)
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ID(A)
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Pulsed ID (A)
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Max TJ (°C)
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Package(mm)
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Launch Date
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EPC2040
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Enhancement Mode Power Transistor
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Single
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15
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6
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30
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0.745
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0.23
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0.14
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0.42
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0
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86
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67
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20
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3.4
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28
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150
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BGA 0.85 x 1.2
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Apr, 2017
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选型表 - EPC 立即选型
How2GaN | 如何设计具有最佳布局的eGaN® FET功率级
eGaN FET的开关速度比硅基MOSFET更快，因此需要更仔细地考虑印刷电路板（PCB）布局设计以最小化寄生电感。寄生电感会导致过冲电压更高，同时减慢开关速度。本篇笔记将会探讨使用eGaN FET设计最佳功率级布局的关键步骤，来避免上述不良影响并最大化转换器性能。
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面向DC/DC轉換的eGaN® FET及積體電路應用簡介
型号- EPC2059,EPC9003C,EPC2215,EPC2218,EPC2016C,EPC2052,EPC2051,EPC2053,EPC2055,EPC90153,EPC2101,EPC2106,EPC2105,EPC9137,EPC90151,EPC2065,EPC90152,EPC2067,EPC2100,EPC9014,EPC2066,EPC90150,EPC9097,EPC90145,EPC90142,EPC9098,EPC90143,EPC9099,EPC9092,EPC90148,EPC90146,EPC90147,EPC9091,EPC2619,EPC2014C,EPC2030,EPC2032,EPC2152,EPC2031,EPC2033,EPC9060,EPC9061,EPC9062,EPC2308,EPC2307,EPC9005C,EPC2204,EPC2207,EPC2206,EPC2019,EPC9166,EPC2252,EPC9047,EPC9162,EPC9041,EPC9163,EPC9165,EPC9160,EPC2302,EPC2304,EPC2306,EPC9010C,EPC2305,EPC9177,EPC2020,EPC2023,EPC9179,EPC9174,EPC9055,EPC9170,EPC9006C,EPC2010C,EPC9148,EPC23101,EPC2071,EPC23102,EPC23103,EPC23104,EPC90140,EPC9143,EPC90132,EPC90137,EPC90138,EPC90135,EPC9159,EPC2007C,EPC9157,EPC9036,EPC9158,EPC2088,EPC9037,EPC9151,EPC90122,EPC9031,EPC90123,EPC9153,EPC90120,EPC9033,EPC90124
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