UMS Has Introduced 2 GaN Power Bars CHK9013-99F and CHK9014-99F Featuring Wide Band Capability up to 13GHz max
UMS has introduced 2 GaN power bars, the CHK9013-99F and the CHK9014-99F.
They exhibit:
High power
High efficiency
Wide band capability
Compatibility with pulsed and CW operating modes
These transistor devices can be optimized in systems according to specific requirements: PAE, power, robustness…
To fine-tune the overall performance, UMS ULRC technology, is open in foundry mode to design the needed matching elements.
UMS power bars are also available assembled in hermetic, plastic, or flange packages.
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本文由洛希转载自UMS News，原文标题为:CHK9013-99F and CHK9014-99F transistors，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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UMS氮化镓（GaN）功率晶体管选型:Glin(dB) @ Freq(GHz):12-23.5，Saturated Power(W)：14-180，Bias(mA)：0.1-1300，Bias(V)：30-50.
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产品型号
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品类
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Glin(dB) @ Freq(GHz)
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Operating Frequency(GHz)
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Saturated Power(W)
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PAE(%) @ Freq(GHz)
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Bias(mA)
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Bias(V)
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Case
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CHKA011aSXA
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氮化镓功率晶体管
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23.5 @ 0.44
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Up to 1.5
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130
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75 @ 0.44
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640
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50
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Ceramic Metal Flange
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选型表 - UMS 立即选型
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