UMS 8.5-10.5GHz 2 stage X-band High Power Amplifier CHA8710-99F with High power up to 25W, Excellent PAE to 44%
UMS has introduced the CHA8710-99F, a 8.5-10.5GHz 2 stage X-band High Power Amplifier.
The circuit features:
High power: 25W
Excellent PAE: 44%
High gain: 28.5dB
This product is designed for a wide range of applications from Defense to radar and commercial communication systems.
Summary:
Frequency range: 8.5-10.5GHz
Ouput power: 25W
PAE: 44%
Linear gain: 28.5dB
DC bias: 25V@0.75A
Chip size: 5.1x4.2x0.1mm
- |
- +1 赞 0
- 收藏
- 评论 0
本文由洛希转载自UMS News,原文标题为:The CHA8710-99F a X-Band HPA,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关推荐
CHA8611-99F GaN based 18W X-band High Power Amplifier Featuring a High PAE of 43% at Psat
The CHA8611-99F is a GaN based 18W X-band High Power Amplifier, featuring a high PAE of 43% at Psat. This circuit is designed for a wide range of applications including defense and commercial communication systems. This product is supplied as a bare die.
产品 发布时间 : 2023-09-28
CHA8610-99F, a 8.5-11GHz X-band High Power Amplifier Featuring a 15 to 18W Output Power with a High PAE of 40% at Psat
UMS is enlarging its GaN offer with the new CHA8610-99F 8.5-11GHz X-band High Power Amplifier, featuring a 15 to 18W output power with a high PAE of 40% at Psat.The product is supplied as a bare die.
产品 发布时间 : 2023-09-09
CHA8054-99F GaN X-band High Power Amplifier Optimized for Space Applications , Operating Between 7.7 and 8.6GHz
The CHA8054-99F is a new GaN X-band High Power Amplifier operating between 7.7 and 8.6GHz. This circuit, optimized for space applications, is designed to obtain an excellent PAE of 50% and a typical high saturated output power of 23W @28V drain supply voltage. It exhibits a typical 27dB linear gain.
产品 发布时间 : 2023-09-02
ASB GaAs,GaN CATV放大器/功率放大器/低噪声放大器/增益模块放大器选型指南
目录- GaAs/GaN CATV Amplifier GaAs/GaN Power Amplifier Low Noise Amplifier Gain Block Amplifier
型号- ASL55T8,ASF143,AWB519,ASF140,ASL51T8,ASL362,AHB5414S4,ASL360,ABU25XX,AAT2074B2,AWB512,AWB517,AWG0123E,ASL912,AHX5406DS6,ABX0618Q,ABU2513,ABU2518,ASF150,ABU2516,ASL5543,ASF153,AAT2075B2,ASX201,AGN0942D,ASX1436,ASW234,ABB15XX,ASX1437,ASW114,ASX1037,AWG1023E,ASL59D4,ASX601,ASX1037HG,ASX602,ASL882,ASL920,AWG0015E,ASL425,ABU1513,AWG0117E,ABU1516,AWG3023,AWG3020,AWG1020E,ABU1510,ASL380,AHB5411S4,ASA307,AWG0317,AAT2073B2,AWB578,AWB459,ASL09C,AWG0313,ABU1526,ASL552,ASL551,ASL550,ASX621,ASX620,ASL390,AGN140,AWB51D2,AWG1017E,AHX-SERIES,ASX501,AGN1540,AWB51D9,ABU1519,AWB589,AWG3015,ASA306B,AHL5218T8,AWB51D7,AWG3017,AGT0510,AWG0115E,ASL41S9,ASL53T8,AGT0515,ASL51S59,AHX5607ST6,ASW320,ABB25XX,ASL560,AWG2716,ASL31C,AWG2719,ASW204,ASX415,AWB312,AWB319,AWB317,AGN0944Q,ABU15XX,ABB2518,AGN922,ABB2516,AWG2020,ABB2513,ASL331,ASX520,ASL330,ASL5463,AWG0917,AAT2077B2,ASX401,AWG1015E,ASW311,ASX521,ASW318,AWB31D1,ASX403,ASW313,ASW314,AHL3023S6,ASW316,AWB31D7,AWB688,AWG2023,AWB31D9,AWG0120E,AWB31D2,AWG0023E,ASL54T8,ABB1519,ASL226,ABB1516,ASF240,ABB1513,ASA-SERIES,ABB1510,ASX0837HG,ASL580,ASW220,AHX5406SS6,AHL5220T8,AWG0913,AHB5414T8,ABB817,ASL33C,AHX5607DT6,AWG2015,AWG0020E,AGN0942Q,AWG2017,ASF133,AGN0944M,ASF255,ASF250,AHB3612S6,ABB1526,ASF130,ASL5563,AAT2076B2,ASX420,ASX423,ASW212,ASX1536,AGN0944D,ASL590,ASL39D2,AWG1715,AWG1718,ASW335,ASW214,ASW338,AHL5216T8
ASB 微波GaAs/GaN高功率运算放大器选型指南
目录- GaAs MMIC/GaN MMIC GaN Transistor AGTO515 Application
型号- AGT0510,ABX0618Q,AGN0944M,AGT0515,ASX0837HG,ASX1436,AGN0942D,ASX1437,ASX1536,AGN0944D,ASX1037,ASX107HG,AGN0942Q,AGN0944Q
CHA8612-QDB 18W X-Band High Power Amplifier GaN Monolithic Microwave IC in SMD leadless package
型号- CHA8612-QDB/XY,CHA8612-QDB,CHA8612-QDB/21,CHA8612-QDB/20
X-Band High Power Amplifier with 8.5-11.5GHz Frequency Range and 25W Output Power | UMS
UMS published a very versatile new GaN HPA. The CHA8212-99F is a 8.5-11.5GHz 25W output power X-Band High Power Amplifier. It features a 44dBm Pout with a high PAE of 36% at Psat (@Pin=20dBm). This circuit is supplied in bare die. The CHA8212-99F is dedicated to defence applications and a wide range of microwave applications and systems.
新产品 发布时间 : 2021-02-06
X-BAND AESA CHIPSET GaN & GaAs solutions for Multipurpose Phased Array Radar
型号- CHA6005-QEG (2),CHS8618-99F,CHA8710-99F,CHT3029-QEG (1)(2),CHT4016-QEG (1)(2),CHA6710-99F,CHS5100-99F,CHA8611-99F,CHA5115-QDG (2),CHA7215-99F,CHA1010-99F,CHS7012-99F,CHC3014-99F(*)(1)),CHA7114-99F,CHA8100-99F (1),CHA2110-QDG (2),CHP3015-QDG (1)(2),CHA8610-99F
CHA8312-99F 17W X-Band High Power Amplifier GaN Monolithic Microwave IC data sheet
型号- CHA8312-99F/00,CHA8312-99F
HIGH POWER GaN RF
型号- CHS7012-99F,CHS8618-99F,CHA8710-99F,CHK8015-99F,CHK9014-99F,CHA6710-99F,CHK9013-99F,CHA8610-QYG,CHA8611-99F,CHZ8012-QJA,CHZ9012-QFA
CHA8710a99F 25W X-Band High Power Amplifier GaN Monolithic Microwave IC
型号- CHA8710A99F,CHA8710A99F/00
UMS CHA8710a99F 25W X波段大功率放大器数据手册
描述- CHA8710a99F 25W X-Band High Power Amplifier GaN Monolithic Microwave IC.
型号- CHA8710A99F,CHA8710A99F/00
UMS Lannched the CHA8612-QDB,a New State-of-the-art X-Band 7.9-11GHz QFN Plastic Packaged HPA
The CHA8612-QDB is an X-Band 7.9-11GHz new HPA designed by UMS to serve commercial and defense communications systems and your radar applications. This product features a high output power of 15W and a high PAE of 37% @ Pin 26dBm. It exhibits a high gain of 26dB.
新产品 发布时间 : 2023-01-30
电子商城
登录 | 立即注册
提交评论