UMS 8.5-10.5GHz 2 stage X-band High Power Amplifier CHA8710-99F with High power up to 25W, Excellent PAE to 44%
UMS has introduced the CHA8710-99F, a 8.5-10.5GHz 2 stage X-band High Power Amplifier.
The circuit features:
High power: 25W
Excellent PAE: 44%
High gain: 28.5dB
This product is designed for a wide range of applications from Defense to radar and commercial communication systems.
Summary:
Frequency range: 8.5-10.5GHz
Ouput power: 25W
PAE: 44%
Linear gain: 28.5dB
DC bias: 25V@0.75A
Chip size: 5.1x4.2x0.1mm
- |
- +1 赞 0
- 收藏
- 评论 0
本文由洛希转载自UMS News，原文标题为:The CHA8710-99F a X-Band HPA，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
相关推荐
CHA8611-99F GaN based 18W X-band High Power Amplifier Featuring a High PAE of 43% at Psat
The CHA8611-99F is a GaN based 18W X-band High Power Amplifier, featuring a high PAE of 43% at Psat. This circuit is designed for a wide range of applications including defense and commercial communication systems. This product is supplied as a bare die.
CHA8054-99F GaN X-band High Power Amplifier Optimized for Space Applications , Operating Between 7.7 and 8.6GHz
The CHA8054-99F is a new GaN X-band High Power Amplifier operating between 7.7 and 8.6GHz. This circuit, optimized for space applications, is designed to obtain an excellent PAE of 50% and a typical high saturated output power of 23W @28V drain supply voltage. It exhibits a typical 27dB linear gain.
CHA8610-99F, a 8.5-11GHz X-band High Power Amplifier Featuring a 15 to 18W Output Power with a High PAE of 40% at Psat
UMS is enlarging its GaN offer with the new CHA8610-99F 8.5-11GHz X-band High Power Amplifier, featuring a 15 to 18W output power with a high PAE of 40% at Psat.The product is supplied as a bare die.
X-Band High Power Amplifier with 8.5-11.5GHz Frequency Range and 25W Output Power | UMS
UMS published a very versatile new GaN HPA. The CHA8212-99F is a 8.5-11.5GHz 25W output power X-Band High Power Amplifier. It features a 44dBm Pout with a high PAE of 36% at Psat (@Pin=20dBm). This circuit is supplied in bare die. The CHA8212-99F is dedicated to defence applications and a wide range of microwave applications and systems.
CHA8312-99F 17W X-Band High Power Amplifier GaN Monolithic Microwave IC data sheet
型号- CHA8312-99F/00,CHA8312-99F
CHA8612-QDB 18W X-Band High Power Amplifier GaN Monolithic Microwave IC in SMD leadless package
型号- CHA8612-QDB/XY,CHA8612-QDB,CHA8612-QDB/21,CHA8612-QDB/20
X-BAND AESA CHIPSET GaN & GaAs solutions for Multipurpose Phased Array Radar
型号- CHA6005-QEG (2),CHS8618-99F,CHA8710-99F,CHT3029-QEG (1)(2),CHT4016-QEG (1)(2),CHA6710-99F,CHS5100-99F,CHA8611-99F,CHA5115-QDG (2),CHA7215-99F,CHA1010-99F,CHS7012-99F,CHC3014-99F(*)(1)),CHA7114-99F,CHA8100-99F (1),CHA2110-QDG (2),CHP3015-QDG (1)(2),CHA8610-99F
HIGH POWER GaN RF
型号- CHS7012-99F,CHS8618-99F,CHA8710-99F,CHK8015-99F,CHK9014-99F,CHA6710-99F,CHK9013-99F,CHA8610-QYG,CHA8611-99F,CHZ8012-QJA,CHZ9012-QFA
【产品】8.5GHz~10.5GHz两级增益功率放大器，输出功率高达25W
UMS推出的高功率放大器（HPA）CHA8710-99F，PAE可达44％，线性增益为28.5dB，可用于大多数军事以及商业通信系统。
CHA8710a99F 25W X-Band High Power Amplifier GaN Monolithic Microwave IC
型号- CHA8710A99F,CHA8710A99F/00
UMS CHA8710a99F 25W X波段大功率放大器数据手册
描述- CHA8710a99F 25W X-Band High Power Amplifier GaN Monolithic Microwave IC.
型号- CHA8710A99F,CHA8710A99F/00
UMS Lannched the CHA8612-QDB，a New State-of-the-art X-Band 7.9-11GHz QFN Plastic Packaged HPA
The CHA8612-QDB is an X-Band 7.9-11GHz new HPA designed by UMS to serve commercial and defense communications systems and your radar applications. This product features a high output power of 15W and a high PAE of 37% @ Pin 26dBm. It exhibits a high gain of 26dB.
CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC
型号- CHA7215,CHA7215-99F/00
电子商城
品牌：UMS
品类：GaAs Monolithic Microwave IC
价格：￥169.1086
现货： 1,503
授权代理品牌：集成电路
授权代理品牌：分立元件
授权代理品牌：接插件及结构件
授权代理品牌：部件、组件及配件
授权代理品牌：电源及模块
授权代理品牌：电子材料
授权代理品牌：仪器仪表及测试配组件
授权代理品牌：电工工具及材料
授权代理品牌：机械电子元件
授权代理品牌：加工与定制
我要提问
登录 | 立即注册
提交评论