Novusem SiC MOSFET Product with High Cost Performance and High Reliability, Meeting the Application Needs of New Energy Vehicles
On September 27, Novus Semiconductors Co., Ltd. (NOVUSEM) held an online product launch event. At the event, the company rolled out the first generation of NovuSiC® MOSFET (G1) and announced the mass production schedule of the second generation (G2). Dr. Gao Wei, Deputy General Manager of Novusem, delivered a keynote speech on product performance with the theme of "accumulating strength and continuing innovation." He also made a detailed introduction to the development milestones, design concept, and unique advantages of silicon carbide (SiC) MOSFETs. Wang Deqiang, an application engineer, demonstrated the application fields, application scenarios, and solutions around product application, reflecting Novusem's independent R&D strengths and its determination to compete in the automotive chip market.
Novusem, an Up-and-Coming Company Devoted to Blazing a New Trail
The world semiconductor industry started in the 1950s. Since the end of the 1970s, planar and trench power MOSFETs and IGBTs have come out one after another. As society's electrification level advances, power MOSFETs have evolved through process advancement, technology improvement, and material iteration. The breakthroughs of SiC in material preparation have greatly promoted the commercialization of SiC devices.
As a third-generation semiconductor material, SiC boasts outstanding physical properties like wide bandgap, high breakdown electric field strength, high thermal conductivity, and high electron saturation rate. This allows SiC power semiconductor devices to have remarkable advantages, such as high voltage resistance, high temperature resistance, fast switching speed, and low loss. With these advantages, SiC power devices can reduce circuit board space and lower system costs and energy loss, thus significantly improving power density and system efficiency. The Chinese domestic SiC MOSFET market relies mainly on imports due to its complex technology and process. With the rapidly increasing application and demand for new technologies in new energy vehicles, industrial power supplies, PV inverters, etc., there is a vast space for localization.
Established in December 2019, Novusem is the first high-tech enterprise in Sichuan Province dedicated to the design and development of wide-bandgap semiconductor SiC power devices. After more than 900 days of R&D, improvements, devotion, and strength accumulation, Novusem released NovuSiC® 1200V/75mΩ MOSFET G1 at this launch event, a follow-up to its self-developed SiC NovuSiC® EJBS™ (Enhanced Junction Barrier Schottky) diode series launched at the end of June 2022.
NovuSiC® 1200V/75mΩ MOSFET, A SiC Product with High Cost Performance and High Reliability
NovuSiC® 1200V/75mΩ MOSFET performs excellently in new energy vehicles, DC charging piles, PV systems, and other application scenarios, as it drastically reduces static and dynamic losses, increases system power density, and lowers the total system cost.
In the development of SiC MOSFETs, Novusem adopted a balanced and optimized approach to electrical performance, robustness, and reliability based on application scenarios. That is to say, Novusem improves the devices' robustness and long-term reliability by adopting measures such as using lower gate voltage drives, optimizing the gate oxide process and the electric field intensity of the gate oxide, and reducing the curvature effect of the junction terminal while taking into account the specific on-resistance (Ron,sp) and the electric field of the gate oxide.
In terms of electrical performance and robustness, NovuSiC® 1200V/75mΩ MOSFETs can achieve an on-resistance (Ron) of 75 mΩ and a Ron,sp of 4.6 when VGS is 20V, ranking among the best in the Chinese domestic market. When the withstand voltage is 1200V, the electric field strength of the gate oxide in the JFET region is far less than the conventional limit of 4.0 MV/cm, and the short-circuit withstand time is longer than 3μs under the condition where VDD is 800V. NovuSiC® 1200V/75mΩ MOSFET reduces the effective area of the JFET region while increasing the channel density, and optimizes the dynamic characteristics by reducing Cgd. Its gate charge (Qg) is comparable to that of international competitors, with a figure of merit (FOM) above the industry average, and it will reach the most advanced international technical standard from G2 (1Q '23), demonstrating Novusem's commitment to innovation and quality.
In response to risks such as FN tunneling, trap-assisted tunneling, and the degradation and failure of the gate oxide caused by external defects, Novusem proposed a targeted optimization strategy of "controlling the electric field of the gate oxide and improving the quality of the gate oxide/screening out gate oxide defects" to further improve the reliability of the gate oxide.
In planar SiC MOSFETs, the high electric fields of the gate oxide are mainly concentrated in the channel and the gate oxide center in the JEFT region.
For the electric fields at the channel: ensures the long-term reliability of the gate oxide by using a lower working gate voltage.
For the gate oxide center in the JEFT region: designed with a lower electric field intensity at the rated blocking voltage of 1200V than the conventional limit of 4.0 MV/cm in order to reduce the electric field intensity.
WLTBI (Wafer-Level Test & Burn-In) is introduced in the wafer testing stage to screen out any potential degradation/failure of the gate oxide in the product life cycle.
In addition to a detailed introduction to NovuSiC® 1200V/75mΩ MOSFET G1, Dr. Gao Wei also gave a preview of the development progress and performance advantages of G2.
NovuSiC® MOSFET G2 is manufactured based on a more advanced and innovative design and process, thus significantly improving static and dynamic performance: reducing the Ron,sp by 24% and Qg by 25%. This renders the second generation of NovuSiC® MOSFETs with the performance strengths of high efficiency, high switching frequency, and high power density.
Meeting the Application Needs of New Energy Vehicles and Promoting Vehicle Electrification in China
It is a major trend to apply SiC power devices to new energy vehicles, charging piles, electric drive control systems, and other fields since they can improve vehicle efficiency and increase mileage. Given China's enormous market, there is a great demand for the industry. Novusem has launched the cost-effective NovuSiC® series and the highly-reliable DuraSiC® series for different application scenarios, among which the DuraSiC® series is mainly used in on-board chargers (OBCs) and vehicle-mounted DC-DC.
Currently, with the increasing demand for fast charging and bidirectional charging/discharging, the OBC input voltage has been raised to 380VAC, and the battery voltage has been raised to 800V. Using 1200V SiC devices can simplify the system topology to meet the requirements of high voltage applications. The main topology adopts the three-phase full-bridge PFC and the bidirectional resonant DC-DC topology of all-SiC MOSFETs to implement bidirectional charging and discharging. This helps increase the power to over 11 kW, lower losses by more than 50% thus increasing the peak efficiency by more than 97%, and reduce the size of magnetic devices by more than 70%.
In the field of DC charging piles, there is a clear trend of high-voltage, intelligent, and diversified development. In terms of the main topology of the DC charging module, Novusem's NovuSiC® solution provides various advantages such as a simple DC-DC system design, ease of control, low switching loss, and obvious efficiency improvements, which can help release more control resources.
In the application of 10kW PV inverters, compared to silicon-based IGBT solutions, the NovuSiC® solution can reduce the total loss by 50% and improve the efficiency by 2% at a switching frequency of 20 kHz, or it can double the switching frequency and reduce the system volume by more than 60% at the same total loss.
To help customers evaluate the feasibility of solutions in the early stages of product development, Novusem specially developed the "EVAL-MAIN" evaluation board. With this evaluation board, customers can perform single-pulse and double-pulse tests to assess the dynamic performance of switch transistors.
This evaluation board consists of a mother board and a flexible driver daughter board and provides two isolation solutions: capacitive isolation and magnetic isolation. It is applicable to TO247-3 and TO247-4 packaged SiC MOSFETs and is compatible with various driver chips for testing and evaluation.
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本文由上山打老虎转载自NOVUSEM News，原文标题为:NovuSiC® MOSFET Officially Released，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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目录- Company Profile Nomenclature of MOSFETs Automotive-grade MOSFETs Industrial-grade MOSFETs High-voltage MOSFETs APPLICATIONS OF AUTO-GRADE POWER SEMICONDUCTORS LEADING MOSFET PRODUCT INTRODUCTION MOSFET SYSTEM CERTIFICATION MOSFET PACKING INFORMATION
型号- JMTK130P04A,JMTL3404A,JMSH0805PK,JMSH1507PC,SMAJ6.0CA,JMGK540P10A,JMSH1507PE,JMTG055N04A,JEU12N3,JMTE060N06A,JMSH0406AKQ,JMSL0609AUQ,JMTC3003A,JMGC540P10A,JMSH1010AKQ,JMTK3006B,JMTQ440P04A,JMSH0805PG,JMSH0805PE,JMTC60N04B,JMSH0805PC,JMPF10N80G1,JMTR3002A,JMTLB2N7002KDS,JEB12C,JMTK3005A,JMGI088V10A,JMSL0602AGQ,JMSH0601AG,JMSL0612AKQ,JMTE035N04A,JMSL0406AGDQ,JMTC4004A,JMTQ075N03D,JMTL3407A,JMTK58N06B,JMTG080P03A,JMTK3005L,JMSL1013AGD,JMGC044V10D,JMTK3004A,JMSL0603BGQ,JMSH0601BG,JMTQ11DN10A,JMH65R290ACFP,SMBJ22CA-AU,JMTL3406A,JMTK320N10A,JMTC320N10A,JMTL3400A,5.0SMDJ12CA,JMTK3003A,10BJ26CA-AU,JMSL0604AGQ,JMTM3415KL,JMTQ200P03A,JMTL2310A,JMTY11DN10A,JMTI50N06B,JMTL3400L,JMTV075N03A,JEB03CX,JMSL0302DG,JMTK3002B,JMTE018N03A,JMSL1008AKQ,JMSH1510AG,JMTG062N04D,JMSH1002AEQ,JMTK4006A,JMTG080N04D,JMSH1004BGWQ,JMSH0603AK,15BJ33A-AU,JMTL3402A,JMSL0302BU,JMTG170N06A,JMTL2312A,JMTK500N10A,JMTG100P03A,JMTK4005A,SM8S24CA-AL,JMSL0302BG,JMTL3401B,JMTL3401A,15BJ22A-AU,JMTC3005A,JMSL0315APD,JMSL0302AU,JMSH0601AGQ,SM8S33CA-AL,JMSL0302AK,JMPL0648AGQ,JMTC6888A,JMTK4004A,JMPF9N65G1,JMSL0302AG,JMGM14DV10A,SMBJ22A-AU,JMTJ250P02A,JMTV3010A,15BJ30A-AU,JMSL0601BGQ,JMTL3415KL,JMSL0315ARD,JMSH0401CGQ,JMPL0622AK,JMH65R430AK,JMSL1070APD,JMSH1516AC,JMTLB3134K,JMTI10N10A,JMSH1516AE,JMH65R430AF,JMSH1516AG,JMPK9N65G1,JMH65R430AE,JECR3006SL,JMTP130P04A,JMSH1004ACR,JMSL1008AGQ,JMSH1507AEQ,JMSL0620AGDEQ,JMPL0648AUQ,JMH65R190ACFP,JMH65R980APLN,JMSH1565AUS,JMSL0609AKQ,JMSL0315AUD,JMSL0610AGDQ,JMPK840G1,JMSH0801AG,JMPF20N65G1,JMTV210P02A,JMTL850P04A,JMPK2N65G1,SMBJ5.0A,JMTK2007A,JMTP4435A,JMTC035N06D,JMTC085P04A,JMTP230C04D,JMTK018N03A,SMAJ5.0CA,JMSL0620AUE,JMTG60N04B,JMTK2006A,JMTP380N03D,JEU12T2BL,JMPFP7N65G1,JMTN11DN10A,JMTK90N02A,JMSH0401AGQ,RS1MAF,SMDJ5.0A,JMGK088V10A,15BJ24A-AU,JMTK110N06A,JMTC035N04A,JMTL2N7002KS,JMH65R040ASFDQ,JMSL0612AGQ,JMSH1207AG,JMSH1207AE,JMSH1207AC,JMSL0609APD,SMBJ30CA-AU,JMSL1040AGD,JMSH0803AG,US5M,JMSL0609AG,15BJ26CA-AU,JMSH1305AC,JMH65R490AFFD,JMSL0609AK,JMSH1305AE,JMSL0403AGQ,JMTP130N04A,JMTI320N10A,JMSL1006AGQ,JMSL0609AP,JMSH1004AEQ,JMSL0609AU,JMSL1040AGQ,SMBJ5.0CA,JMSH0803AGS,JMTG060N06A,JMSL0615AUD,JMTE6888A,JMSH2010BC,JMSH2010BE,JMTP045N03A,JMH65R110ACFD,JMTC80N06A,JMTE3003A,JMSL0307AV,JMSH1565APS,SM6P36A,10BJ24A-AU,JMSL1008AE,SM6P36C,JMTK060N06A,JMSL1008AC,JMSH1004BG,JMSL1008AG,JMSH1001ATL,JMSL1008AK,JMSL1008AP,JMSL0307AG,JMPL1050APD,JMTV080N02A,JMTE3002B,JMSL1018AGD,JMPF9N90G1,JMSH0606AKQ,JMTK060P03A,JMSL1018AGQ,JMSL0403AG,JMSL0403AU,JMSH0402BGQ,JMSH1004BE,JMSH1507AC,JMSL0402BGQ,JMSL1010PG,JMSH1004BC,JMSH1507AE,JMSL0620AGE,SM8S30A-AL,JMSH2010BS,SMBJ24A-AU,JMTJ2302C,JMSL040SAG,JMSH0401CG,JMTQ130P04A,JMTT8810KS,JMTL3134K,JMSH1004AE,JMSH1004AC,JMH65R190APLNFD,5.0SMDJ11A,JMSH1504ATL,JMSH1003ATL,JMSH041AGQ,JMH65R110AEFD,JMTQ240N03D,JEB24T2BH,JMSH1504ASQ,JMTQ040N03A,JMTG018N03A,JMSL0401AGQ,JMTG060P03A,JMSL0401AG,JMSH0606AGQ,JMTC170N10A,JMSL1018AKQ,JMTQ130N04D,JMSH1006AG,JMSH1006AE,JMSH1006AK,15BJ26A-AU,JMH65R980ACFP,JMSH1508AEQ,JMTE025N04D,JMSH0801ATL,JMTK170N10A,JMTQ240N03A,JMTY2310A,JMPK7N65G1,15BJ33CA-AU,JMTI290N06A,JMSL0401BG,JMTI3005A,JMTG90N02A,JMSL0606AGWQ,SMBJ24CA-AU,5.0SMDJ12A,JMSL0610AGD,JMSL0609AGQ,JMSH1535AGQ,JMTQ055N04A,JMTQ240C03D,JMSH1006AC,JMSH0403AGQ,JMSH1001ATLQ,JMPL1050AK,JMTE070N07A,JMPL1050AP,JMSH0403BG,JMTP250P03A,JMSH040SAG,10BJ26A-AU,JMPL1050AU,JMTL3134KT5,JMSL030SAG,JMPL1050AY,SMAJ6.0A,JMPL0622AKQ,JMSL0406AUQ,JMTQ100P03A,JMPF7N65BJ,JMTL3134KT7,JMSH1565AGS,JMPK1N60G1,JMTK80N06A,JMSH0401ATL,JMTG070N06A,JMSH0403AG,JMSL0303AU,JMSL0303AG,JMTV100N02A,JMGL3V10A,JMSL0303AK,JMPL1050AGQ,JMSH0406AGDQ,JMPL1050AG,JMPL1050AE,JMSL1004BG,JMSL0603BG,JMTV070N02A,SMBJ26A-AU,JMTC025N04D,JMTK050P03A,JMSL0605AGD,JMTK290N06A,JMTP120C03D,JMGP10V10A,JMSL0603AK,JMTM8810KS,JMSL1009BUQ,JMSH0403AKQ,JMTG100N06A,JMTG100N06D,SM6P30A,SM6P30C,JMTG170C04D,JMTP850P04A,JMTL400N04A,JMSL0315AGD,JMSL1008AUN,JMSH0830AG,JMSH1565AKS,SM6P33A,SM6P33C,JMTQ100N04A,JMSH0401BG,JMTG030P02A,15BJ30CA-AU,JMGK10V10A,JMTG100N03A,JMH65R430AKQ,JMGK020V04A,JMPL1050AKQ,JMSL1006AG,JMSL1006AK,JMTQ100N03A,JEU05T2B,JMSH0401AG,JMTV200P03A,JMSH1010AGQ,JMTP11DN10A,JMSH1504NTL,JMSH1002CE,JMSL1020AGDQ,JMTD2N7002KS,JMSH1002CC,JMTG100N04A,JMSL1070AK,JMTV2333A,JMSH1002AS,JMSH0602AKQ,JMTQ55P02A,JMTG200C03D,JMPF8N60G1,JMSL0612AG,JMSL1070AY,JMSL0601BG,JMSL0630AGD,JMTK120N03A,JMTG016N04A,JMSL0612AK,JMGC088V10A,JMSH1002BC,JMSL0612AU,JMSH1002BE,JMSH1509AC,JMSH1509AE,JMSH1509AG,JMTLA3134K,JMSL10130AK,JMSL10130AL,JMSL10130AM,JMTG100C03D,JMSL10130AP,SM8S30CA-AL,JMSH1506ASQ,JMSL0601AG,SMCJ5.0A,JMSL10130AY,JMTV3400A,JMSH1002AC,JMTK035N04L,JMTQ170C04D,JMSL0615APD,JMSH1002AE,JMSL1018AUQ,JMTG130P04A,JMTQ320N10A,JMSH0605AGDQ,JMSH0602AK,JMPK2N60G1,JMSH0804NK,JMSH0602AC,JMSL0310AU,JMSH0602AG,JMSL0615AGDQ,JMSH0602AE,JMSH1511AC,JEU24P3,JMTL2302B,JMTL2302C,JMGG031V06A,JMTK080P03A,JMSL0406AKQ,JMH65R110AEFDQ,JMGG540P10A,JMSL1023AY,JMSL1010AKQ,JMTG3005A,JMTG120C03D,JMSH1535AG,JMSH1001AE7,JMH70R430AK,JECR6006SL,SMBJ26CA-AU,JMSH0804NG,JMTP170C04D,JMSH0804NE,JMH70R430AF,JMSH0804NC,5.0SM
【视频】蓉矽高可靠性SiC功率器件在光储充与新能源汽车上的应用
型号- NCD30S40TTD,NC1M120C12HT,NC1M120C12W,NC1D120C10AT,NCD30S20TTD,NC1D120C20KT,NC1D120C30KT,NC1M120C40HT,NC1M120C75HT
DMZ20C15EA 150V N沟道耗尽型功率MOSFET临时数据手册
描述- 本资料为DMZ20C15EA型150V N-Channel Depletion-Mode Power MOSFET的初步数据手册。资料详细介绍了该产品的特性、电气特性、热特性、封装尺寸等信息，适用于新能源车辆、工业自动化、浪涌保护、非隔离线性电源、常开开关、线性放大器、恒流源等应用领域。
型号- DMZ20C15EA
东方产品手册
型号- ORD213,OACPL314W1,ORD211,ORD217,ORT007YGL,ORL-F5BL-A1,OFOD817,OR063L,OASSR1510,OR-AQV258LH,OFOD814,ORTPD2040,ORTPT3016-H1,ORTPT3016-H2,ORD205,ORD206,ORTPD2024,OAPV2121S,ORD207,OR-6N137,OR50L,OR-6N136,OR-460A,OR-6N135,OAQH1223,ORT007RD,OR-6N139,OR-6N138,OHCPL053L,ORAQV258LH,ORM425A,OR-483W,OACPLW341,OR-352,OACPLW340,OR-351,ORAQV258P5,OR-357,OR-355,OR-354,OR481W1,OHCPL0531,OHCPL0530,OR-484W,ORTPD2060,OR0611,OR-2201,OR-2200,OTLP627M,ORT302X,ORTR-8402-F-A,OR-2202,OR060L,OMCT9001,OR3H7-4,OR-260L,OR-2611,OTLP626,ORTPD20120,OR-H11AA3,OR-H11AA2,OR-H11AA4,OR-H11AA1,OAQH3213,OTLP160G,OACPL60L,ORT009YG,OHCPL2530,OHCPL2531,ORL-F3PTB-14,OTLP621,OTLP620,OTLP160J,ORL-F3PDB,ORT016IRA,OR314,OR2611,OR-IR1206LI-CA2-CTR,OR-2630,OR2601,OR-0452,ORL-F3WC-A2,OR-0213,ORAQV258L,ORTPT3118-H1,OR-0453,OR-H61L,OR-2631,ORAQV258H,ORAQV258LHP5,OR-480W,ORTPT3018-H2,OR-IR1206ZA-CA-3T,OTLP2958,OTLP2955,OR-0223,OR064L,OTLP4597G,OTLP161J,OAQH3223,OTLP161G,OR-155E,OR-481W,ORTPD2090,OASSR-1520,OR60LW1,OR-0631,OACNTH61L,OR-0630,OR-D207,OR-D206,OR-D205,OR-MOC3041,OR-MOC3043,OR-MOC3042,ORM440A,ORT007YG,OFOD3120,OR-063L,ORT012IRA,OR-D213,OR-D211,OR357,OR-D217,OR355,OR354,OR-MOC3052,OR-MOC3051,OR352,OTLP163J,OR351,OR-MOC3053,OR-MOC304X,OR60LW,ORTR-20001-T,OAQY280S,OHCPLO53L,OR-MOC3061,OAQY217GS,OR-MOC3063,OTLP360J,OR-MOC3062,OR341,OR340,OTLP166J,OR-MOC305X,OR-2601,ORTR-9608-F,OFOD3150,OTLP250H,OTLP165J,OR-MOC306X,OR0600,ORB87,OR0601,OFOD617,OAQY282S,OAQV252G3A,OR-MOC3081,ORTPD2160D,OR-MOC3083,OR-MOC3082,OR-MOC307X,OTLP168J,OR-T308X,OTLP2303,OHCPL050L,ORTPT3121-H1,ORTR-8307,OHCPL0501,OTLP361J,OR-MOC308X,OHCPL0500,OR-0600,OR-0601,OAPV1121S,OR-T3082,OR-T3081,OR-T3083,ORTPD2015,OTLP172AM,OR-060L,OAQW214,OAQW216,OAQW210,OAQW212,ORL-F3HIRC-A2,OAQH1213,ORL-F3HIRC-A4,OR-0611,ORL-F5PDB,ORTR-9606-F,OTLP363J,OAQW217,OAQY284S,OR-M484,OR-M483,OR-AQV258P5,OACPL341W,ORPC814,ORPC815,ORPC816,O60L,ORPC817,OR-IR1206LI-CA1-CT,OR-M305X,OTLP560G,OTLP560J,OR-M3082,OR-M3083,ORPC824,ORPC825,ORTPT3125-H1,OR-M3084,ORPC827,OR357PVG,OR3223,OTLP3061S,OR-357PVG,ORL-IR908-7C-F,OR-M306X,OR-840A,OTLP3062A,OR-M3053,OR-M3054,OR-M3052,OTLP598AA,OR3213,OR-M3044,ORPC844,ORPC845,OACPL340W,ORL-PT928-6C-F,OR-M3064,ORPC847,OR-M3062,OR-M3063,OR-3H5-4,OR-H11L1,OR50LW1,OTLP561G,OTLP561J,OR-406A,OR-M304X,ORPC851,ORPC852,OR-10XX,OR5211,OR-PL2835IRC,OFODM121,OTLP187,ORM460A,OTLP185,OFODM124,OTLP182,OG3VM-351,OTLP181,OTLP180,ORTR-9909,OR-50LW,OR-314W,OR-M501,O63L,OR-3150,OR-339J,OR-MOC3010,OR-MOC3012,OR-MOC3011,OVOM1271,OR-860A,ORL-F3PTB,OR-481W1,OR-MOC3021,OG3VM-62F1,OR-MOC3023,OR-MOC3022,OR-316J,OR-425A,OFOD050L,OR-MOC301X,ORM601,OACPL341W1,ORT010IRC,OMCT62,OMCT61,ORT010IRA,OR-3H7-4,OR-MOC3032,OR-MOC3031,OR-MOC3033,OR-M308X,ORL-IR908-7C,OR-MOC302X,OASSR-4118,OR253X,OASSR-4119,OMOCD211M,OR-H11A4,OR-H11A3,OACPL- M483,OTLP224GA-2,OACPL- M484,OR-333J,OR-HIR1206ZA-CA-3T,OR1213,OACPLM61M,ORL-F5WC-A0,OASSR-4110,OASSR-4111,OR-H11A2,OR-H11A1,OR-M701,OG3VM-61,OR2530,OR2531,OTLP3023,OTLP3022,OTLP223GA,OTLP3021,OHCPL4504,OHCPL4503,OHCPL4502,OR-HIR1206LI-CA2-CTR,OMCT6,OR-483W1,OMOCD213M,ORM308X,OR806A,ORTPD212650,OR-3120,OR-PL3528IRC,ORL-F5HIRC-A2,ORL-F5HIRC-A4,OASSR-4128,ORL-F3YGC-A4,OR-AQV258LHP5,OTLP798GA,OTLP3043,OTLP3042,OTLP3041,OR-640A,OR-337J,260L,OASSR-4120,OASSR-5211,OR-T350,OR-2213,OTLP3064S,OTLP292-4,OTLP3073,OR-M3024,OR-M3022,OR-M3023,OR-2223,OR-M3042,008IRC,OR-M3043,OR450X,OG3VM-61VY2,263L,ORT114IRA-L,OG3VM-61VY1,OACPLW314,OR-341W1,OR-330J,OTLP3064,ORAQV258HP5,OTLP3063,OTLP3062,OTLP3061,OR-440A,ORL-F5GG-AA,OR-M302X,OR4504,ORT007IRA,OMOCD217M,OR-331J,OR4502,OR4503,OR26XX,OTLP3062S,OR3H7,ORL-F5YGC-AA,OR3H5,OR3H4,OR-332J,OACPL60LW,OR1223,OR3H5-4,OTLP3063S,ORL-IR928-6C,OTLP3083,OR-660A,OR-PT0805Z8-B1-3T,OTLP620-4,ORL-F5PTB,OTLP620-2,OR-2531,OR-2530,OR606A,ORTPD2151,ORM302X,ORTPD2155,ORT015IRA,OTLP781,OR480W1,OHCPL2611,OACPL60LW1,OR-PL2835PTC,OR-PL2835PTB,OTLP785,OR-C79,ORTPD2160,ORTPD2143,ORTPD2140,OR-1213,OR050L,OR-M460A,ORTPD212460,OHCPL2601,OR050X,OG3VM-601,OR0500,OR0501,OR-1223,OTLP171A,OAQY284EH,OTLP170G,ORT010SRK,OAQH2223,ORL-PT928-6B,ORL-PT928-6C,OACPL50L,OTLP170A,OTLP170J,ORTPD2165,OR-4502,OR-4503,OR-4504,OAQV212,OAQV214,OAQV210,ORTPD2151D,OR60L,OAQH2213,ORT008RD,OHCPL063L,OR-340W,OTLP555,OTLP553,OFODM8801,OR06XX,OA0H1213,ORM306X,ORL-F3RR-A1,ORL-F3RR-A4,OR-HIR0805Z8-CA-3T,OTLP3910,OASSR-3220,ORT008YGK,OR-M440A,ORT010IRC-L,ORAQV258LP5,OTLP171J,OR-AQV258HP5,OASSR1218,OR053X,ORM304X,ORT108YG,ORH11L1,OHCPL0453,OHCPL2631,OHCPL2630,OTLP523,OHCPL0452,OR-806A,ORM305X,OR825A,OTLP759,OR0530,OR0531,OR-IR0603LF-CA-4T,OR-C87,ORL-F5YY-A3,ORPC-847,OR-050L,ORPC-844,ORPC-845,OR247,OR245,OR244,OTLP385,OTLP261J,OTLP383,ORL-PT908-7C,ORPC-851,ORPC-852,OR840A,ORTR-9707,ORL-F5IRC-A4,OR-606A,OAQY214EH,ORL-F5IRC-A2,OTLP260J,OTLP224G-2,ORT912IRA,OASSR-1420,OTLP2409,OR-0530,OR-0531,OTLP240D,ORL-PT908-7C-F,OTLP240A,OAQY280EH,ORT008YG,OAQY216EH,OR-825A,OR425A,ORL-PT908-7B,OG3VM-62C1,OTLP626-4,OTLP172GAM,OTLP626-2,OR-AQV258L,OR-PL2835HIRC,OR316J,OR-4N26,OR-4N27,OR-4N28,OR-4N29,OR4N38,OR4N37,OR4N36,OR-4N25,OTLP351A,OTLP3783
DMZ22C15EA 150V N沟道耗尽型功率MOSFET临时数据手册
描述- 本资料为ARK Microelectronics Co., Ltd.提供的DMZ22C15EA型150V N-Channel Depletion-Mode Power MOSFET的临时数据手册。资料详细介绍了该产品的特性、电气参数、封装尺寸和应用领域。
型号- DMZ22C15EA
蓉矽1200V 40mΩ碳化硅产品NC1M120C40HT用于车载充电机，整体系统效率提升约为2%，峰值可达97%以上
蓉矽半导体自主研发的1200V 40mΩ SiC MOSFET NC1M120C40HT已顺利通过AEC-Q101车规级测试和HV-H3TRB加严可靠性考核，支持11kW/22kW大功率主流充电，适配目前OBC 800V高电压电池发展趋势。采用1200V SiC器件可以简化系统拓扑复杂度，总损耗可降低50%以上，磁性器件体积可降低70%以上。整体系统效率提升约为2%，峰值可达97%以上。
蓉矽1200V 40/75mΩ碳化硅MOSFET用于直流充电桩，减少50%器件用量，助力800V高压快充充电桩行业发展
基于蓉矽半导体第二代1200V 40/75mΩ SiC MOSFET的两电平方案结构简单、控制方便，可简化系统拓扑，减少50%的器件用量，助力800V高压快充充电桩行业的发展。蓉矽半导体1200V 40mΩ SiC MOSFET电压等级为1200V，最大可持续电流达75A。
AKJ82C06AS 60V常开（1-Form-A）光学MOSFET继电器临时数据表
描述- 本资料为AKJ82C06AS型60V常开（1-Form-A）光MOSFET继电器的数据手册。资料详细介绍了该继电器的特性、电气特性、典型特性、封装尺寸以及订购信息，适用于电信、测量设备、工业自动化、控制设备和新能源汽车等领域。
型号- AKJ82C06AS
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