Novusem SiC MOSFET Product with High Cost Performance and High Reliability, Meeting the Application Needs of New Energy Vehicles

2023-09-13 NOVUSEM News

On September 27, Novus Semiconductors Co., Ltd. (NOVUSEM) held an online product launch event. At the event, the company rolled out the first generation of NovuSiC® MOSFET (G1) and announced the mass production schedule of the second generation (G2). Dr. Gao Wei, Deputy General Manager of Novusem, delivered a keynote speech on product performance with the theme of "accumulating strength and continuing innovation." He also made a detailed introduction to the development milestones, design concept, and unique advantages of silicon carbide (SiC) MOSFETs. Wang Deqiang, an application engineer, demonstrated the application fields, application scenarios, and solutions around product application, reflecting Novusem's independent R&D strengths and its determination to compete in the automotive chip market.


Novusem, an Up-and-Coming Company Devoted to Blazing a New Trail

The world semiconductor industry started in the 1950s. Since the end of the 1970s, planar and trench power MOSFETs and IGBTs have come out one after another. As society's electrification level advances, power MOSFETs have evolved through process advancement, technology improvement, and material iteration. The breakthroughs of SiC in material preparation have greatly promoted the commercialization of SiC devices.


As a third-generation semiconductor material, SiC boasts outstanding physical properties like wide bandgap, high breakdown electric field strength, high thermal conductivity, and high electron saturation rate. This allows SiC power semiconductor devices to have remarkable advantages, such as high voltage resistance, high temperature resistance, fast switching speed, and low loss. With these advantages, SiC power devices can reduce circuit board space and lower system costs and energy loss, thus significantly improving power density and system efficiency. The Chinese domestic SiC MOSFET market relies mainly on imports due to its complex technology and process. With the rapidly increasing application and demand for new technologies in new energy vehicles, industrial power supplies, PV inverters, etc., there is a vast space for localization.


Established in December 2019, Novusem is the first high-tech enterprise in Sichuan Province dedicated to the design and development of wide-bandgap semiconductor SiC power devices. After more than 900 days of R&D, improvements, devotion, and strength accumulation, Novusem released NovuSiC® 1200V/75mΩ MOSFET G1 at this launch event, a follow-up to its self-developed SiC NovuSiC® EJBS™ (Enhanced Junction Barrier Schottky) diode series launched at the end of June 2022.


NovuSiC® 1200V/75mΩ MOSFET, A SiC Product with High Cost Performance and High Reliability

NovuSiC® 1200V/75mΩ MOSFET performs excellently in new energy vehicles, DC charging piles, PV systems, and other application scenarios, as it drastically reduces static and dynamic losses, increases system power density, and lowers the total system cost.


In the development of SiC MOSFETs, Novusem adopted a balanced and optimized approach to electrical performance, robustness, and reliability based on application scenarios. That is to say, Novusem improves the devices' robustness and long-term reliability by adopting measures such as using lower gate voltage drives, optimizing the gate oxide process and the electric field intensity of the gate oxide, and reducing the curvature effect of the junction terminal while taking into account the specific on-resistance (Ron,sp) and the electric field of the gate oxide.


In terms of electrical performance and robustness, NovuSiC® 1200V/75mΩ MOSFETs can achieve an on-resistance (Ron) of 75 mΩ and a Ron,sp of 4.6 when VGS is 20V, ranking among the best in the Chinese domestic market. When the withstand voltage is 1200V, the electric field strength of the gate oxide in the JFET region is far less than the conventional limit of 4.0 MV/cm, and the short-circuit withstand time is longer than 3μs under the condition where VDD is 800V. NovuSiC® 1200V/75mΩ MOSFET reduces the effective area of the JFET region while increasing the channel density, and optimizes the dynamic characteristics by reducing Cgd. Its gate charge (Qg) is comparable to that of international competitors, with a figure of merit (FOM) above the industry average, and it will reach the most advanced international technical standard from G2 (1Q '23), demonstrating Novusem's commitment to innovation and quality.


In response to risks such as FN tunneling, trap-assisted tunneling, and the degradation and failure of the gate oxide caused by external defects, Novusem proposed a targeted optimization strategy of "controlling the electric field of the gate oxide and improving the quality of the gate oxide/screening out gate oxide defects" to further improve the reliability of the gate oxide.


In planar SiC MOSFETs, the high electric fields of the gate oxide are mainly concentrated in the channel and the gate oxide center in the JEFT region.



For the electric fields at the channel: ensures the long-term reliability of the gate oxide by using a lower working gate voltage.



For the gate oxide center in the JEFT region: designed with a lower electric field intensity at the rated blocking voltage of 1200V than the conventional limit of 4.0 MV/cm in order to reduce the electric field intensity.


WLTBI (Wafer-Level Test & Burn-In) is introduced in the wafer testing stage to screen out any potential degradation/failure of the gate oxide in the product life cycle.


In addition to a detailed introduction to NovuSiC® 1200V/75mΩ MOSFET G1, Dr. Gao Wei also gave a preview of the development progress and performance advantages of G2.


NovuSiC® MOSFET G2 is manufactured based on a more advanced and innovative design and process, thus significantly improving static and dynamic performance: reducing the Ron,sp by 24% and Qg by 25%. This renders the second generation of NovuSiC® MOSFETs with the performance strengths of high efficiency, high switching frequency, and high power density.


Meeting the Application Needs of New Energy Vehicles and Promoting Vehicle Electrification in China

It is a major trend to apply SiC power devices to new energy vehicles, charging piles, electric drive control systems, and other fields since they can improve vehicle efficiency and increase mileage. Given China's enormous market, there is a great demand for the industry. Novusem has launched the cost-effective NovuSiC® series and the highly-reliable DuraSiC® series for different application scenarios, among which the DuraSiC® series is mainly used in on-board chargers (OBCs) and vehicle-mounted DC-DC.


Currently, with the increasing demand for fast charging and bidirectional charging/discharging, the OBC input voltage has been raised to 380VAC, and the battery voltage has been raised to 800V. Using 1200V SiC devices can simplify the system topology to meet the requirements of high voltage applications. The main topology adopts the three-phase full-bridge PFC and the bidirectional resonant DC-DC topology of all-SiC MOSFETs to implement bidirectional charging and discharging. This helps increase the power to over 11 kW, lower losses by more than 50% thus increasing the peak efficiency by more than 97%, and reduce the size of magnetic devices by more than 70%.


In the field of DC charging piles, there is a clear trend of high-voltage, intelligent, and diversified development. In terms of the main topology of the DC charging module, Novusem's NovuSiC® solution provides various advantages such as a simple DC-DC system design, ease of control, low switching loss, and obvious efficiency improvements, which can help release more control resources.


In the application of 10kW PV inverters, compared to silicon-based IGBT solutions, the NovuSiC® solution can reduce the total loss by 50% and improve the efficiency by 2% at a switching frequency of 20 kHz, or it can double the switching frequency and reduce the system volume by more than 60% at the same total loss.


To help customers evaluate the feasibility of solutions in the early stages of product development, Novusem specially developed the "EVAL-MAIN" evaluation board. With this evaluation board, customers can perform single-pulse and double-pulse tests to assess the dynamic performance of switch transistors.


This evaluation board consists of a mother board and a flexible driver daughter board and provides two isolation solutions: capacitive isolation and magnetic isolation. It is applicable to TO247-3 and TO247-4 packaged SiC MOSFETs and is compatible with various driver chips for testing and evaluation.

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本文由上山打老虎转载自NOVUSEM News,原文标题为:NovuSiC® MOSFET Officially Released,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

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捷捷微电(JieJie Microelectronics)金属氧化场效应晶体管(MOSFET)选型指南(英文)

目录- Company Profile    Nomenclature of MOSFETs    Automotive-grade MOSFETs    Industrial-grade MOSFETs    High-voltage MOSFETs    APPLICATIONS OF AUTO-GRADE POWER SEMICONDUCTORS    LEADING MOSFET PRODUCT INTRODUCTION    MOSFET SYSTEM CERTIFICATION    MOSFET PACKING INFORMATION   

型号- JMTK130P04A,JMTL3404A,JMSH0805PK,JMSH1507PC,SMAJ6.0CA,JMGK540P10A,JMSH1507PE,JMTG055N04A,JEU12N3,JMTE060N06A,JMSH0406AKQ,JMSL0609AUQ,JMTC3003A,JMGC540P10A,JMSH1010AKQ,JMTK3006B,JMTQ440P04A,JMSH0805PG,JMSH0805PE,JMTC60N04B,JMSH0805PC,JMPF10N80G1,JMTR3002A,JMTLB2N7002KDS,JEB12C,JMTK3005A,JMGI088V10A,JMSL0602AGQ,JMSH0601AG,JMSL0612AKQ,JMTE035N04A,JMSL0406AGDQ,JMTC4004A,JMTQ075N03D,JMTL3407A,JMTK58N06B,JMTG080P03A,JMTK3005L,JMSL1013AGD,JMGC044V10D,JMTK3004A,JMSL0603BGQ,JMSH0601BG,JMTQ11DN10A,JMH65R290ACFP,SMBJ22CA-AU,JMTL3406A,JMTK320N10A,JMTC320N10A,JMTL3400A,5.0SMDJ12CA,JMTK3003A,10BJ26CA-AU,JMSL0604AGQ,JMTM3415KL,JMTQ200P03A,JMTL2310A,JMTY11DN10A,JMTI50N06B,JMTL3400L,JMTV075N03A,JEB03CX,JMSL0302DG,JMTK3002B,JMTE018N03A,JMSL1008AKQ,JMSH1510AG,JMTG062N04D,JMSH1002AEQ,JMTK4006A,JMTG080N04D,JMSH1004BGWQ,JMSH0603AK,15BJ33A-AU,JMTL3402A,JMSL0302BU,JMTG170N06A,JMTL2312A,JMTK500N10A,JMTG100P03A,JMTK4005A,SM8S24CA-AL,JMSL0302BG,JMTL3401B,JMTL3401A,15BJ22A-AU,JMTC3005A,JMSL0315APD,JMSL0302AU,JMSH0601AGQ,SM8S33CA-AL,JMSL0302AK,JMPL0648AGQ,JMTC6888A,JMTK4004A,JMPF9N65G1,JMSL0302AG,JMGM14DV10A,SMBJ22A-AU,JMTJ250P02A,JMTV3010A,15BJ30A-AU,JMSL0601BGQ,JMTL3415KL,JMSL0315ARD,JMSH0401CGQ,JMPL0622AK,JMH65R430AK,JMSL1070APD,JMSH1516AC,JMTLB3134K,JMTI10N10A,JMSH1516AE,JMH65R430AF,JMSH1516AG,JMPK9N65G1,JMH65R430AE,JECR3006SL,JMTP130P04A,JMSH1004ACR,JMSL1008AGQ,JMSH1507AEQ,JMSL0620AGDEQ,JMPL0648AUQ,JMH65R190ACFP,JMH65R980APLN,JMSH1565AUS,JMSL0609AKQ,JMSL0315AUD,JMSL0610AGDQ,JMPK840G1,JMSH0801AG,JMPF20N65G1,JMTV210P02A,JMTL850P04A,JMPK2N65G1,SMBJ5.0A,JMTK2007A,JMTP4435A,JMTC035N06D,JMTC085P04A,JMTP230C04D,JMTK018N03A,SMAJ5.0CA,JMSL0620AUE,JMTG60N04B,JMTK2006A,JMTP380N03D,JEU12T2BL,JMPFP7N65G1,JMTN11DN10A,JMTK90N02A,JMSH0401AGQ,RS1MAF,SMDJ5.0A,JMGK088V10A,15BJ24A-AU,JMTK110N06A,JMTC035N04A,JMTL2N7002KS,JMH65R040ASFDQ,JMSL0612AGQ,JMSH1207AG,JMSH1207AE,JMSH1207AC,JMSL0609APD,SMBJ30CA-AU,JMSL1040AGD,JMSH0803AG,US5M,JMSL0609AG,15BJ26CA-AU,JMSH1305AC,JMH65R490AFFD,JMSL0609AK,JMSH1305AE,JMSL0403AGQ,JMTP130N04A,JMTI320N10A,JMSL1006AGQ,JMSL0609AP,JMSH1004AEQ,JMSL0609AU,JMSL1040AGQ,SMBJ5.0CA,JMSH0803AGS,JMTG060N06A,JMSL0615AUD,JMTE6888A,JMSH2010BC,JMSH2010BE,JMTP045N03A,JMH65R110ACFD,JMTC80N06A,JMTE3003A,JMSL0307AV,JMSH1565APS,SM6P36A,10BJ24A-AU,JMSL1008AE,SM6P36C,JMTK060N06A,JMSL1008AC,JMSH1004BG,JMSL1008AG,JMSH1001ATL,JMSL1008AK,JMSL1008AP,JMSL0307AG,JMPL1050APD,JMTV080N02A,JMTE3002B,JMSL1018AGD,JMPF9N90G1,JMSH0606AKQ,JMTK060P03A,JMSL1018AGQ,JMSL0403AG,JMSL0403AU,JMSH0402BGQ,JMSH1004BE,JMSH1507AC,JMSL0402BGQ,JMSL1010PG,JMSH1004BC,JMSH1507AE,JMSL0620AGE,SM8S30A-AL,JMSH2010BS,SMBJ24A-AU,JMTJ2302C,JMSL040SAG,JMSH0401CG,JMTQ130P04A,JMTT8810KS,JMTL3134K,JMSH1004AE,JMSH1004AC,JMH65R190APLNFD,5.0SMDJ11A,JMSH1504ATL,JMSH1003ATL,JMSH041AGQ,JMH65R110AEFD,JMTQ240N03D,JEB24T2BH,JMSH1504ASQ,JMTQ040N03A,JMTG018N03A,JMSL0401AGQ,JMTG060P03A,JMSL0401AG,JMSH0606AGQ,JMTC170N10A,JMSL1018AKQ,JMTQ130N04D,JMSH1006AG,JMSH1006AE,JMSH1006AK,15BJ26A-AU,JMH65R980ACFP,JMSH1508AEQ,JMTE025N04D,JMSH0801ATL,JMTK170N10A,JMTQ240N03A,JMTY2310A,JMPK7N65G1,15BJ33CA-AU,JMTI290N06A,JMSL0401BG,JMTI3005A,JMTG90N02A,JMSL0606AGWQ,SMBJ24CA-AU,5.0SMDJ12A,JMSL0610AGD,JMSL0609AGQ,JMSH1535AGQ,JMTQ055N04A,JMTQ240C03D,JMSH1006AC,JMSH0403AGQ,JMSH1001ATLQ,JMPL1050AK,JMTE070N07A,JMPL1050AP,JMSH0403BG,JMTP250P03A,JMSH040SAG,10BJ26A-AU,JMPL1050AU,JMTL3134KT5,JMSL030SAG,JMPL1050AY,SMAJ6.0A,JMPL0622AKQ,JMSL0406AUQ,JMTQ100P03A,JMPF7N65BJ,JMTL3134KT7,JMSH1565AGS,JMPK1N60G1,JMTK80N06A,JMSH0401ATL,JMTG070N06A,JMSH0403AG,JMSL0303AU,JMSL0303AG,JMTV100N02A,JMGL3V10A,JMSL0303AK,JMPL1050AGQ,JMSH0406AGDQ,JMPL1050AG,JMPL1050AE,JMSL1004BG,JMSL0603BG,JMTV070N02A,SMBJ26A-AU,JMTC025N04D,JMTK050P03A,JMSL0605AGD,JMTK290N06A,JMTP120C03D,JMGP10V10A,JMSL0603AK,JMTM8810KS,JMSL1009BUQ,JMSH0403AKQ,JMTG100N06A,JMTG100N06D,SM6P30A,SM6P30C,JMTG170C04D,JMTP850P04A,JMTL400N04A,JMSL0315AGD,JMSL1008AUN,JMSH0830AG,JMSH1565AKS,SM6P33A,SM6P33C,JMTQ100N04A,JMSH0401BG,JMTG030P02A,15BJ30CA-AU,JMGK10V10A,JMTG100N03A,JMH65R430AKQ,JMGK020V04A,JMPL1050AKQ,JMSL1006AG,JMSL1006AK,JMTQ100N03A,JEU05T2B,JMSH0401AG,JMTV200P03A,JMSH1010AGQ,JMTP11DN10A,JMSH1504NTL,JMSH1002CE,JMSL1020AGDQ,JMTD2N7002KS,JMSH1002CC,JMTG100N04A,JMSL1070AK,JMTV2333A,JMSH1002AS,JMSH0602AKQ,JMTQ55P02A,JMTG200C03D,JMPF8N60G1,JMSL0612AG,JMSL1070AY,JMSL0601BG,JMSL0630AGD,JMTK120N03A,JMTG016N04A,JMSL0612AK,JMGC088V10A,JMSH1002BC,JMSL0612AU,JMSH1002BE,JMSH1509AC,JMSH1509AE,JMSH1509AG,JMTLA3134K,JMSL10130AK,JMSL10130AL,JMSL10130AM,JMTG100C03D,JMSL10130AP,SM8S30CA-AL,JMSH1506ASQ,JMSL0601AG,SMCJ5.0A,JMSL10130AY,JMTV3400A,JMSH1002AC,JMTK035N04L,JMTQ170C04D,JMSL0615APD,JMSH1002AE,JMSL1018AUQ,JMTG130P04A,JMTQ320N10A,JMSH0605AGDQ,JMSH0602AK,JMPK2N60G1,JMSH0804NK,JMSH0602AC,JMSL0310AU,JMSH0602AG,JMSL0615AGDQ,JMSH0602AE,JMSH1511AC,JEU24P3,JMTL2302B,JMTL2302C,JMGG031V06A,JMTK080P03A,JMSL0406AKQ,JMH65R110AEFDQ,JMGG540P10A,JMSL1023AY,JMSL1010AKQ,JMTG3005A,JMTG120C03D,JMSH1535AG,JMSH1001AE7,JMH70R430AK,JECR6006SL,SMBJ26CA-AU,JMSH0804NG,JMTP170C04D,JMSH0804NE,JMH70R430AF,JMSH0804NC,5.0SM

选型指南  -  捷捷微电  - V1.0a  - 2023/7/7 PDF 英文 下载

【视频】蓉矽高可靠性SiC功率器件在光储充与新能源汽车上的应用

型号- NCD30S40TTD,NC1M120C12HT,NC1M120C12W,NC1D120C10AT,NCD30S20TTD,NC1D120C20KT,NC1D120C30KT,NC1M120C40HT,NC1M120C75HT

商品及供应商介绍  -  NOVUSEM PPTX 中文 下载

数据手册  -  方舟微  - Rev. 0.1  - Feb. 2024 PDF 英文 下载

纳芯微电子(NOVOSENSE)信号感知芯片/隔离与接口芯片/驱动与采样芯片选型指南(英文)

描述- NOVOSENSE Microelectronics (NOVOSENSE, SSE Stock Code 688052) is a highly robust & reliable analog and mixed signal Chip company. Since its establishment in 2013, the company has been focusing on sensor, signal chain, and power management, providing comprehensive semiconductor products and solutions, which are widely used in automotive, industrial, information communication and consumer electronic

型号- NSI6602NA-DLAR,NSL21924-Q1,NCA1051,NSI6602VC-Q1SWR,NSI6622NB-Q1SWKR,NCA1051N-Q1SPR,NSM2017,NSI6602NC-Q1SWR,NSM2019,NSM211X,NSI6602A-Q1SWKR,NSM2013,NIRS485,NSIP83086,NSI6622VB-Q1SPOR,NSM2015,NSM2016,NSC9260X,NSHT30-CLAR,NSD1624-Q1SPR,NSM2011,NSM2012,NSI8231,NSI8230,NSD2621C-DQAGR,NSR33XXX,NSC9262,NSC9260,NSI6801LC-DDBR,NSI6602VD-Q1SWKR,NSC9264,NSP1830,NSG65N15K-DQAFR,NST112X,NCA1042C-Q1DNR,NCA1042,NCA1042A-Q1DNHR,NSI8220NX,NSI6622A-DSWKR,NSI6801TB-DDBR,NSD1624-DSPKR,NSP1833,NST7719,NSP1831,NSP1832,NSM1052,NSM1053,NSI8222,NSA2860X,NSI8221,NSI8220,NSE5701 SERIES,NSI6642C-DSPNR,NSM1051,NSI822XC,NSIP8921W1-DSWR,NSI6602MNF-Q1SWTR,NSD11416-Q1STBR,NSI6602VB-Q1SPNR,NCA3491,NSI6642A-DLAR,NSI6602NB-Q1SWKR,NSA2860_TSSOP,NSD1026V,NSI8221CX-DSWR,NSE34050,NCA1043B-Q1DNKR,NCA1044N-Q1SPR,NSIP8944W1-DSWR,NSL21912-Q1,NSM201X,NSI6622A-Q1SPNR,NCA1051N-Q1,NSM2031,NSI6602MNB-Q1SWTR,NSD7310A-DHSPR,NSM2032,NCA1145-Q1SPKR,NSM2033,NSI8210,NSM2034,NST112-DSTR,NSI6601MB-DSPR,NSD1015T,NSI8266CX-DSWR,NSI6602VD-DSWKR,NSI8222CX-DSPR,NSM105X SERIES,NSD1015MT-DSPR,NSC2860X_DQNR,NCA1021S-Q1SPR,NSI8262CX-DSWR,NSPGS2,NCA34XX,NCA3485,NCA1051C,NSI68011C-DSWAR,NSI8221NX,NSI6602NC-DLAMR,NST1002,NSPGS5,NSM211X SERIES,NSI6602VC-DLAMR,NST1001,NCA1042C-Q1,NSI6602A-DLAR,NSI6602ND-DSWKR,NSM105X,NSD16241-Q1SPR,NSI1303M0X,NSM3011,NSPAS3M SERIES,NSI8240CX-DSPR,NSD7312-Q1,NSM3013,NSM3012,NSA2860_SSOP16,NSA2862X,NSI6642B-DSWKR,NSM1071,NSM1072,NSI823XC,NSI6642A-DLAMR,NSD5604N,NSI319X,NSI6642D-DLAR,NSI8100NC,NSI6602B-Q1SWR,NSI6622ND-DSPNR,NSI6601B-DSPR,NSA2860X-QQNR,NSI8210NX,NSI6642D-DSWKR,NSI6602MF-DSWTR,NSD5604E,NIRSP31,NSI6602MNB-DSWTR,NST175,NST1075,NSI6602A-DSPNR,NCA9617A SERIES,NSI68010B-Q1SWAR,NSI1312D,NSI6642B-DSWR,NSI8222NX,NSI6601C-DSPR,NSI6622NB-DLAR,NSIP8841W1-DSWR,NSP1631,NSI8221CX-DSWVR,NSP1632,NSP1630,NSD56008-Q1HTSPR,NSI6622C-DLAR,NSM301X,NSM107X,NSI824XC,NSI6602VA-Q1SPNR,NSI6602ND-DLAR,NSI6801C-DSWFR,NSD3604-Q1,NCA3176,NSI6801MB-DSWVR,NSD3608-Q1QAJR,NSI1312S,NSI6622VB-Q1SWR,NSI6622B-Q1SPNR,NSD5604N-DHTSPR,NSD1624-DLAJR,NSI68011C-Q1SWAR,NSI6602VA-DLAMR,NSI6602NA-DLAMR,NSI6602NB-DSWR,NSD5604E-DHTSTR,NSR35XXX,NSI6622NB-Q1SWR,NSD5604N-Q1HTSPR,NSD1224X,NSI6602C-Q1SPNR,NSI8100W,NSI6622NA-DSPNR,NSIP8844W1-DSWR,NSI6622NB-DSWKR,NSE5702,NSE5701,NSI8100N,NSP183X,NCA1044-Q1DNR,NSI6622NC-DLAR,NCA1021S-Q1DNR,NSI6622VB-Q1SPNR,NCA1044N-Q1DNR,NSD16241-DSPKR,NSI3190,NSI6602VD-DSWR,NPC060N120A-QTOOT,NSI6622NA-Q1SWKR,NSE34050Q,NSD1224LA-DAFR,NSI8241SX,NSI6622NA-Q1SWR,NSI6622NC-Q1SPNR,NSI8231CX-DSWR,NSI1052-DSWR,NSPGL1 SERIES,NSI6622VA-Q1SPOR,NSA2860X_QQNR,NSI6801B-DSWFR,NSI6602B-Q1SPNR,NSI6601WC-DSWVR,NSI6651ASC-Q1SWR,NSC6272,NSI8263CX-DSWR,NSD8310-Q1HTSXR,NSC6273,NSREF31XX,NSI6622ND-DSWR,NSI6622NC-DSPNR,NSI6602NB-DLAR,NSI6602NB-DSPNR,NSA5312,NSI6622VC-Q1SWKR,NSPGL1,NSI6602A-Q1SWR,NSI6622NC-Q1SPOR,NSPGS2 SERIES,NSI6642C-DLAMR,NSR7808,NSI8220WX,NSI8266WX,NSD56008-Q1,NSD5604NE,NSI6622VA-Q1SPNR,NSI6602VB-DSWKR,NSL2161X-Q1,NCA1042BN-Q1SPR,NCA1057-Q1SPR,NCA1043B-Q1,NCA9511,NSI6602A-DSWR,NSC6280,NSI6602NA-Q1SWKR,NSD8308-Q1,NSI6602NC-DSWR,NSI6801TC-DDBR,NSI8242SX,NSI68515AC-DSWR,NSI6602B-DSWKR,NSI6602VD-DLAMR,NPCO60N120A-QTOIT,NSI8220CX-DSWVR,NSI6622NB-DSWR,NST235,NST117,NSI6602VC-DSWKR,NSI6602VC-Q1SWKR,NSI6602MB-DSWDR,NST118,NCA954X SERIES,NSD16242-Q1SPR,NCA9306 SERIES,NCA1044-Q1SPR,NSI6651,NSI6642B-DLAMR,NSI6602C-DSWKR,NSI8240NX,NSE34050 SERIES,NCA1057N-Q1DNR,NSP163X,NSI6602NC-DSPNR,NCA1042BN-Q1,NSI8221WX,NSI66X2,NSI6631ASC-Q1SWR,NSI6602MNC-DSWTR,NCA1042B-Q1DNR,NSI6642,NSI6601C-DSWVR,NIRS2X,NSI6601MB-DSWR,NSI8266SX,NSI6602NB-Q1SPOR,NCA34XX SERIES,NSI6602NC-Q1SPOR,NSD7310A,NSD8306-Q1,NSI6622ND-DLAMR,NSG65N15K,NSD12409-Q1SPR,NSE4250 SERIES,NCA1042CN-DSPR,NSI6602VA-DSWKR,NSI6642D-DLAMR,NCA1051N,NSI6642A-DSWKR,NIRS20N1-DSPR,NIRS21N1-DSPR,NSI6622NA-DLAR,NSC2860X-DQNR,NSI1042-DSWVR,NCA1042C-Q1SPR,NSI6602C-DSWR,NCA1057-Q1DNR,NSI8221CX-DSPR,NPD010N120A-DTOGT,NSI6602VB-Q1SWR,NSI8210CX-DSPR,NSD1026V-QISPR,NSD12416‒Q1,NSI1050-DDBR,NSI8241NX,NSI6602NC-Q1SPNR,NCA1042BN-Q1DNR,NSR10AXX SERIES,NST461,NSD2621X,NCA1042A-Q1,NSI8222WX,NST103,NSI1303D0X,NSI1303E2X,NSI6622A-Q1SWKR,NSI6602VC-DLAR,NSR31 SERIES,NSD16242-DSPR,NCA9555,NSI1052,NSC6360,NSC6362,NSI6622NB-DLAMR,NSI6651ALC-DSWR,NSC6364,NSI6602NA-DSPNR,NSI6622A-DLAR,NSI6622C-Q1SPNR,NCA1042C,NSI8220CX-DSWR,NSI6622C-DSPNR,NSA3166,NCA1042A-Q1SPR,NSIP8941W0-DSWR,NSI6642B-DLAR,NCA1042B-Q1,NSPGD1M,NSPAS3 SERIES,NSD1624-DSPR,NSI6602VA-Q1SWR,NSD1026V-Q1HMSR,NSI8242CX-DSWR,NSI6602MNC-Q1SWTR,NSL2163X-Q1,NST20,NIRS31,NSREF30XX,NCA9545,NSI6622NA-DLAMR,NSI1042,NSI6611,NCA9546,NSI6622B-DSPNR,NCA9306,NCA9548,NSD12416-Q1SPR,NSI6602MC-Q1SWTR,NSI8242NX,NSD8381-Q1QAIR,NSD8308-Q1HTSXR,NCA9617A,NST1001HA,NSI6602VA-DSWR,NSI1303D2X,NSI1050,NSI6601B-DSWVR,NSD7310-DHSPR,NSI6601,NSD731X-Q1,NCA1057N-Q1SPR,NSR7808GXX,NSD7312-Q1HSPR,NSI6602VB-DLAMR,NSI6602MNF-DSWTR,NSD1026V-DHMSR,NSA3300,NSI6602C-Q1SWKR,NSC2860X,NSD11416‒Q1,NSI6622NB-Q1SPNR,NCA1051N-DSPR,NSI6611ASC-DSWR,NSI22C11,NSI8230CX-DSWR,NSI6801B-DSPR,NSI6622A-DSPNR,NSD12409‒Q1,NSD5604NE-DHTSTR,NSPDSX SERI

选型指南  -  纳芯微电子  - April 2024 PDF 英文 下载

数据手册  -  方舟微  - Rev.0.1  - Jun.2023 PDF 英文 下载

蓉矽1200V 40mΩ碳化硅产品NC1M120C40HT用于车载充电机,整体系统效率提升约为2%,峰值可达97%以上

蓉矽半导体自主研发的1200V 40mΩ SiC MOSFET NC1M120C40HT已顺利通过AEC-Q101车规级测试和HV-H3TRB加严可靠性考核,支持11kW/22kW大功率主流充电,适配目前OBC 800V高电压电池发展趋势。采用1200V SiC器件可以简化系统拓扑复杂度,总损耗可降低50%以上,磁性器件体积可降低70%以上。整体系统效率提升约为2%,峰值可达97%以上。

应用方案    发布时间 : 2024-07-17

世强硬创获蓉矽授权,代理车规级碳化硅MOSFET/EJBS/二极管等产品

蓉矽SiC MOSFET系列是采用第三代宽禁带半导体碳化硅制造的一种高耐压、低电阻、高频应用的MOSFET,分有高性价比的NovuSiC®和高可靠性的DuraSiC®系列。

签约新闻    发布时间 : 2023-09-06

How is the Performance of SLKOR Silicon Carbide MOSFET?

The silicon carbide MOS tube of Slkor has multiple performance advantages in electrical performance, switching characteristics, thermal performance, and reliability.

产品    发布时间 : 2024-10-18

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品牌:扬杰科技

品类:Mosfet

价格:¥1.0500

现货:500,000

品牌:捷捷微电

品类:MOSFET

价格:¥0.7000

现货:500,000

品牌:MCC

品类:MOSFET

价格:¥0.1627

现货:305,993

品牌:RENESAS

品类:MOSFET

价格:¥0.2360

现货:263,268

品牌:TOSHIBA

品类:MOSFET

价格:¥0.2034

现货:251,269

品牌:RENESAS

品类:MOSFET

价格:¥0.4460

现货:222,500

品牌:RENESAS

品类:MOSFET

价格:¥1.3640

现货:196,984

品牌:MCC

品类:MOSFET管

价格:¥0.3248

现货:168,278

品牌:RENESAS

品类:MOSFET

价格:¥0.2140

现货:155,504

品牌:RENESAS

品类:MOSFET

价格:¥0.1700

现货:121,731

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功率MOSFET管检测:动静态参数/热特性/高低温性能/可靠性等参数测试

可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。

实验室地址: 西安 提交需求>

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授权代理品牌:接插件及结构件

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授权代理品牌:部件、组件及配件

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授权代理品牌:电子材料

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授权代理品牌:仪器仪表及测试配组件

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授权代理品牌:电工工具及材料

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授权代理品牌:机械电子元件

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授权代理品牌:加工与定制

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