CHA8611-99F GaN based 18W X-band High Power Amplifier Featuring a High PAE of 43% at Psat
The CHA8611-99F is a GaN based 18W X-band High Power Amplifier, featuring a high PAE of 43% at Psat.
This circuit is designed for a wide range of applications including defense and commercial communication systems. This product is supplied as a bare die.
It is manufactured using UMS proprietary 0.25µm gate length GaN pHEMT process.
Main features:
Frequency range: 8.5-11GHz
PAE: 43% @ Psat
Linear gain: 24dB
Psat: 18W
Biasing: 25V@0.8A (quiescent)
Chip size: 4.36×2.57×0.10mm
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本文由洛希转载自UMS News，原文标题为:The CHA8611-99F a new GaN X-band HPA，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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UMS功率放大器（PA）选型表
UMS提供以下品类和技术指标的放大器产品，频率最高可达105GHz，带宽超过20GHz，Gain(dB)：10-38.5，Bias(mA)：30-2300，Bias(V）：2.5-30.
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品类
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RF Bandwidth (GHz)min
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RF Bandwidth (GHz)max
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Gain(dB)
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IP3(dBm)
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P-1dB OUT(dBm)
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Sat. Output Power(dBm)
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PAE(%)
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Bias(mA)
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Bias(V)
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Case
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CHA1008-99F
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低噪声放大器
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80
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105
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17
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DC
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5
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DC
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DC
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115
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2.5
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Die
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品牌：UMS
品类：GaAs Monolithic Microwave IC
价格：￥169.1086
现货： 1,503
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授权代理品牌：接插件及结构件
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