CHA8610-99F, a 8.5-11GHz X-band High Power Amplifier Featuring a 15 to 18W Output Power with a High PAE of 40% at Psat

时间： 2023-09-09 来源：UMS News

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UMS is enlarging its GaN offer with the CHA8610-99F 8.5-11GHz X-band High Power Amplifier, featuring a 15 to 18W output power with a high PAE of 40% at Psat.

The product is supplied as a bare die.

This circuit is designed for a wide range of applications including military and commercial communication systems.

This product is manufactured using a 0.25µm gate length GaN pHEMT process.

Main features:

Frequency range:8.5-11GHz
PAE: 40% @ Psat
Linear gain: 24dB
Psat: 15W
Biasing:30V@0.68A (quiescent)
Chip size: 5.08 x 2.75 x 0.10mm

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本文由洛希转载自UMS News，原文标题为:The CHA8610-99F a new GaN HPA，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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