A GaN 15W L-Band (1.2-1.4GHz) Input Matched Packaged Transistor CHZ015A-QEG in SMD Package Based on Quasi-MMIC Technology

时间： 2023-10-09 来源：UMS News

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The CHZ015A-QEG is a GaN 15W L-Band (1.2-1.4GHz) input matched packaged transistor. It is based on Quasi-MMIC technology.

The circuit operates in pulsed mode and features an output power of 18W with more than 13dB associated gain and a high PAE, of up to 55%.

It allows broadband solutions for a variety of RF power applications in L-band. This circuit is particularly well suited for pulsed radar applications.

The CHZ015A-QEG is manufactured on a 0.5µm gate length GaN HEMT process. It is supplied in a low-cost SMD package 24L-QFN 4×5.

Main features:

Frequency range: 1.2-1.4GHz
Small signal gain: 19.5dB
Power: >15W
Associated gain: >13dB
PAE: Up to 55%
Saturated drain current: 650mA
DC bias: VDS 45V @ ID_Q 100mA

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本文由洛希转载自UMS News，原文标题为:CHZ015A-QEG a GaN Quasi-MMIC device in SMD package，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。

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