WAYON‘s 500V-1500V, Current Covering 2A~40A VDMOSFET for More Power Control
VDMOSFET is known as Vertical Double-diffused Metal Oxide Semiconductor Field Effect Transistor. It has the advantages of high input impedance, fast switching speed, and good thermal stability. At the same time, VDMOSFETs have a positive temperature coefficient and good current self-regulation ability. They are widely used in various fields such as adapters, LED driver power supplies, TV power supplies, industrial control, motor speed control, audio amplification, high-frequency oscillators, uninterruptible power supplies, energy saving lamps, inverters, etc.
In the design of VDMOSFETs, WAYON focuses on optimizing the conflict between voltage withstand and on-resistance, namely improving voltage withstand combined with low on-resistance while reducing Qg and switching losses. WAYON's VDMOSFETs are designed to improve avalanche tolerance, broaden the safe operating area, and thus increase versatility and durability. For high-reliability applications such as industrial control, WAYON has developed a high-quality silicon nitride passivation layer process that significantly improves device reliability.
VDMOSFET Structure Diagram
Because of the larger chip size, the avalanche capability and ESD capability are more prominent and the EMI characteristics are better. Also, due to the maximum withstand voltage of 1700V, VDMOS is suitable for applications that do not pursue power density and are sensitive to system cost, such as LED power supplies, TV power supplies, charger adapters, industrial auxiliary power supplies, etc.
Characteristics and Voltage Range of MOSFETs with Different Structures
WAYON VDMOSFET Application Characteristics Test
1. For the LED power supply industry's high surge immunity requirements and the characteristics of electrolytic capacitor-free circuits, WAYON 650V VDMOFET is tested to meet IEC61000-4-5, ±4KV 1.2/50us test standards.
Single-stage PFC LED power supply surge protection circuit and 4KV surge test waveform
(Yellow Vgs, Green Vds, Blue Id)
2. ESD characteristics can simultaneously meet HBM ≥ 2KV, CDM ≥ 1KV, MM ≥ 200V.
800V VDMOSFET-ESD Third Party Test Report
WMJ3N150D1 with which of competitive products from abroad, RthJ-C of WAYON VDMOSFET (0.94K/W) is 16% smaller than the RthJ-C of competitive products (1.12K/W) under the same condition.
Thermal resistance test values of WMJ3N150D1 and competitive products (double interface method)
WAYON 500V-1500V VDMOSFET Product Series
Relying on the mature customer base of power and industrial control, WAYON has developed VDMOSFET products from 500V-1500V, with current covering 2A~40A and packages covering TO-251, TO-252, TO-262, TO-220/F, TO-247, TO-3PF. The products are tested for reliability according to industrial requirements and 100% EAS testing.
Power semiconductors as an important part of the power system, are one of the decisive factors to enhance energy efficiency. In the future, WAYON will develop more VDMOFET specifications and packages based on customer applications, eg. high voltage 800V, 1A specifications. To provide customers with more options to achieve the best combination of efficiency, power density, and reliability in high-performance efficiency conversion and high-reliability applications.
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本文由飞猫警长转载自WAYON News，原文标题为:WAYON's VDMOSFET Is Coming for More Power Control，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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Preferred Power Solution: Wayon VDMOS Offers High Versatility and Durability
In VDMOSFET design, Wayon focuses on optimizing the contradiction between breakdown voltage and on-resistance, enhancing breakdown voltage while maintaining low on-resistance, and reducing Qg and switching losses. For high-reliability applications such as industrial control, Wayon developed a high-quality silicon nitride passivation layer process that significantly improves device reliability.
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Wayon公司简介
WAYON公司成立于1996年，专注于电路保护、功率半导体和IC产品。公司拥有超过1000名员工，研发团队超过200人，其中包括6名博士。公司销售额在过去几年中稳步增长，2022年达到200百万美金。WAYON在PPTC市场占有率全球第三，拥有超低钳位电压的ESD和EOS国际领先技术。公司产品涵盖电路保护、功率半导体和IC产品，广泛应用于多个行业。公司在中国拥有多个研发中心，并在全球设有销售和服务中心。
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WAYON N沟道功率MOSFET选型表
WAYON 提供N沟道功率MOSFET选型：VGS(V)：30，RDS(on)(Ω)@VGS=10V(max.) ：0.05-11.5，ID(A)@TA=25℃：1-69，BVDSS（V）：250-1500.
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产品型号
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品类
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Description
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Package
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BVDSS（V）
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RDS(on) (Ω) @VGS=10V(max.)
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ID (A) @TA=25℃
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VGS (V)
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VGS(th) (V) (Typ.)
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WMO3N25D1
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N沟道功率MOSFET
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N-Channel VDMOS D1
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TO-252
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250
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2.1
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3
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30
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1.5
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选型表 - WAYON 立即选型
WML3N150D1 WMK3N150D1 WMX3N150d1 WMJ3N150 D1 1500V 3A 5.7ΩN沟道功率MOSFET
本资料介绍了Wayon公司生产的WMx3N150D1系列1500V 3A 5.7Ω N-ch Power MOSFET。该系列产品具有低导通电阻和超低栅极电荷，适用于高功率密度和高效率的应用，同时符合RoHS标准。
WAYON - N-CH功率MOSFET,N-CH POWER MOSFET,WMX3N150D1,WMJ3N150D1,WML3N150D1,WMK3N150D1,开关模式电源,充电器,SMPS,CHARGER
维安从整体系统出发，为客户打造出高效可靠完的系统级智慧新能源充电桩解决方案
维安在布局充电桩行业时，结合新能源电动汽车行业标准和充电桩运营商的功能需求，设计了智能充电桩物联网模块保护防护方案和交直流充电桩整体电路解决方案。
WML3N150D1 WMK3N150D1 WMX3N150D1 WMJ3N150D1 WMM3N150D1 1500V 3A 5.8ΩN沟道功率MOSFET
本资料介绍了Wayon公司生产的1500V 3A 5.8Ω N-ch Power MOSFET系列产品，包括其特性、电气参数、热特性、动态特性、开关特性和体二极管特性。该系列MOSFET适用于SMPS、充电器和DC-DC转换器等领域。
WAYON - N-CH功率MOSFET,N-CH POWER MOSFET,VDMOS,WMX3N150D1,WMJ3N150D1,WML3N150D1,WMK3N150D1,WMM3N150D1,DC-DC,直流-直流,开关模式电源,充电器,SMPS,CHARGER
WMM20N65D1B WMJ20N65D1B WML20N65D1B WMK20N65D1B 650V 20A 0.37ΩN沟道功率MOSFET
这份资料详细介绍了Wayon公司生产的WMx20N65D1B系列650V 20A N-通道功率MOSFET。资料中包含了产品的特性、电气特性、动态特性、开关特性、典型特性曲线、机械尺寸、订购信息和产品规格声明。
WAYON - N-CH功率MOSFET,N-CH POWER MOSFET,WMJ20N65D1B,WMK,WMK20N65D1B,WMJ,WMM,WML,WMM20N65D1B,WML20N65D1B,DC-DC,直流-直流,开关模式电源,充电器,SMPS,CHARGER
WMJ20N65D1B WML20N65D1B WMK20N65D1B 650V 20A 0.37ΩN沟道功率MOSFET
本资料介绍了Wayon公司生产的WMx20N65D1B系列650V 20A N沟道功率MOSFET。该系列产品采用第一代VDMOS技术，具有低导通电阻和超低栅极电荷，适用于高功率密度和高效率的应用。产品符合RoHS标准，并通过了雪崩测试。
WAYON - N-CH功率MOSFET,N-CH POWER MOSFET,VDMOS,WMJ20N65D1B,WMK20N65D1B,WML20N65D1B,DC-DC,直流-直流,开关模式电源,充电器,SMPS,CHARGER
加码功率控制，维安VDMOSFET重磅来袭！优化设计提高耐压并兼顾低导通电阻，同时降低Qg及开关损耗
WAYON重点优化VDMOSFET的耐压和导通电阻的矛盾，提高耐压并兼顾低导通电阻；同时降低Qg及开关损耗。通过优化设计提高雪崩耐量、拓宽安全工作区进而提高通用性和耐用性。针对工业控制等高可靠应用场景，开发高质量的氮化硅钝化层工艺，显著提高器件的可靠性。
WMK6N90D1B WML6N90D1B WMM6N90D1B 900V 6A 2ΩN沟道功率MOSFET
本资料介绍了Wayon公司生产的WMx6N90D1B系列MOSFET器件。该系列产品采用VDMOS技术，具有低导通电阻和超低栅极电荷，适用于高功率密度和高效率的应用。产品符合RoHS标准，并经过100%雪崩测试。
WAYON - N-CH功率MOSFET,N-CH POWER MOSFET,VDMOS,WMK6N90D1B,WMM6N90D1B,WML6N90D1B,DC-DC,直流-直流,开关模式电源,充电器,SMPS,CHARGER
WMK6N90D1 WML6N90D1 WMM6N90D1900V 6A 1.7ΩN沟道功率MOSFET
本资料介绍了Wayon公司生产的WMx6N90D1系列MOSFET器件。该系列产品采用VDMOS技术，具有低导通电阻和超低栅极电荷，适用于高功率密度和高效率的应用。产品符合RoHS标准，经过雪崩测试，并提供了详细的电气特性、热特性和开关特性数据。
WAYON - N-CH功率MOSFET,N-CH POWER MOSFET,VDMOS,WML6N90D1,WMM6N90D1,WMK6N90D1,DC-DC,直流-直流,开关模式电源,CHARGE,充电,SMPS
WM14N90D1 WMK4N90D1 WMM4N90D1 900V 4A 2.9ΩN沟道功率MOSFET
本资料介绍了Wayon公司生产的WMx4N90D1系列900V 4A 2.9Ω N-ch Power MOSFET。该产品具有低导通电阻、超低栅极电荷，适用于高功率密度和高效率的应用。产品符合RoHS标准，经过雪崩测试，广泛应用于SMPS、充电器和DC-DC转换器等领域。
WAYON - N-CH功率MOSFET,N-CH POWER MOSFET,VDMOS,WMK4N90D1,WML4N90D1,WMM4N90D1,DC-DC,直流-直流,开关模式电源,充电器,SMPS,CHARGER
WMJ9N90D1B WML9N90D1B WMK9N90D1B 900V 9A 0.88ΩN沟道功率MOSFET
本资料介绍了Wayon公司生产的WMx9N90D1B系列MOSFET器件。该系列产品采用VDMOS技术，具有低导通电阻和超低栅极电荷，适用于高功率密度和高效率的应用。产品符合RoHS标准，经过雪崩测试，并提供了详细的电气特性和热特性数据。
WAYON - N-CH功率MOSFET,N-CH POWER MOSFET,VDMOS,WML9N90D1B,WMJ9N90D1B,WMK9N90D1B,DC-DC,直流-直流,开关模式电源,充电器,SMPS,CHARGER
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