Benchmark Power Density of 5130 W/in3 with GaN FETs Powers Artificial Intelligence and Advanced Computing Applications

2023-09-15 EPC News

EL SEGUNDO, Calif.— September 2023 — EPC announces the availability of the EPC9159, a 48 V / 12 V, LLC converter designed for high-density 48 V server power and DC-DC converters. This reference design can deliver 1 kW of power in a tiny 17.5 mm x 22.8 mm footprint for a power density of 5130 W/cm3. This is achieved by employing gallium nitride (GaN) power switches operating at high switching frequencies in both the primary and secondary circuits.



The power supply topology used in the design of the EPC9159 is based on the LLC topology. The implemented LLC consists of a primary side full bridge, a fixed ratio planar transformer, and a center tab synchronous rectifier for the secondary side.  The primary full bridge uses four EPC2619, 80 V-rated 3.3 mΩ GaN transistors, and the secondary uses six EPC2067, 40 V-rated 1.3 mΩ GaN transistors.


The EPC9159 achieves a power stage efficiency of 98% at 25 A and a full-load efficiency of 96.2% at 83 A into 12 V.  This design is ideal for high-density computing applications such as artificial intelligence and advanced gaming.


“eGaN® FETs and ICs provide the fast switching, small size, and high efficiency needed to provide the highest power density solutions for advanced computing applications,” said Alex Lidow, CEO of EPC. “The EPC9159 is the ideal solution to address the growing power needs of artificial intelligence and to support the transition to 48 V input for the new high density and high efficiency servers required for these advanced computing applications.”



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本文由星晴123转载自EPC News,原文标题为:Benchmark Power Density of 5130 W/in3 with GaN FETs Powers Artificial Intelligence and Advanced Computing Applications,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。

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【元件】EPC推出EPC9159演示板,功率可达1kW,实现5130W/in3的功率密度,为先进计算应用提供最高功率密度解决方案

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