东海半导体授权世强硬创,代理IGBT单管/模块、SiC二极管/MOS
2023年8与15日,江苏东海半导体有限公司(下称“东海半导体”,英文名:WXDH ELECTRONICS)与世强先进(深圳)科技股份有限公司(下称“世强先进”)正式签署协议。
根据战略合作框架协议,依托世强硬创平台将平面MOS、Trench MOS、SGT MOS、Cool MOS、SJ MOS、SIC MOS、肖特基二极管、LOW-VF肖特基二极管、SIC二极管等产品高效触达至下游终端应用市场。
据悉,东海半导体位于江苏省,占地面积15000平方米,现有员工200+人,拥有一条年产5亿只功率器件的生产线。
该公司致力于先进功率器件的设计研发、封装制造和应用方案研究,聚焦在太阳能光伏、新能源汽车、锂电储能、轻型电动车、电动工具等高端和新兴市场应用。
东海半导体拥有国内一流的8+12寸晶圆代工厂,主要封装分别有TO-3P、TO-247、TO-92、TO-126、TO-251、TO-252、TO-263、TO-220、TO-220F、SOT、QFN系列。并设有器件特性测试、可靠性测试、应用测试和失效分析四个实验室。
其主要产品类别有IGBT单管/模块、SiC二极管/MOS、SGT MOS、TrenchMOS、超结MOS、三端稳压器、FRD、SBD、SCR等。
据悉,东海半导体IGBT产品涵盖650V/1200V、20A-75A等多个规格。
其中,650V FS IGBT采用FS沟槽技术,可提供卓越的开关性能,具备高雪崩耐用性、易于并联操作;而40A 1200V TRENCHSTOP IGBT采用先进的沟槽和场截止技术设计,不仅能提供优异的VCEsat和开关速度、低栅极电荷,还拥有卓越的开关速度,VCEsat中的正温度系数带来轻松并联的能力。
另一方面,东海半导体额定电压为30~150V的功率MOSFET采用先进的分栅沟槽技术,符合RoHS标准。拥有低导通电阻、低栅极电荷、快速切换、低反向传输电容、100%单脉冲雪崩能量测试等性能及特点。
同时东海半导体也拥有650-1700V的碳化硅MOS管,以及150-200V齐全的中低压MOSFET技术平台(Trench+SGT),技术水平先进,产品系列丰富。
自2004年成立以来,东海半导体全线产品已深度应用于工业、消费、汽车、光伏新能源、风机、伺服电机、PLC、电动车控制器、电动工具无刷电机、充电器、开关电源、车灯、座椅控制、360影像、逆变器、储能、大型工商业等领域客户,并获得TTI、Philips、 欧普照明、小米等知名合作伙伴的一致好评。
世强硬创表示,“作为领先的ToB一站式创新研发及供应服务平台,基于平台O2O技术分销服务促使双方达成战略合作,未来将凭借自身优势助力东海半导体的优势产品覆盖至光伏逆变器、汽车电子、工业等领域客户群体,共同提供优质产品及一站式服务。”
江苏东海半导体科技有限公司是一家从事半导体分立器件和集成电路的开发设计、封装测试和销售的高新技术企业。公司研发团队来自国际大厂意法半导体,以创新为动力,不断开发新产品,集产、学、研于一身,已拥有各项专利近百项。江苏东海配有先进的全自动生产设备。主要封装TO-3P、TO-247、TO-92、TO-126、TO-251、TO-252、TO-263、TO-220、TO-220F、SOT、QFN系列。主要产品有:快恢复二极管、IGBT、通用晶体管、MOSFET、肖特基二极管、可控硅和三端稳压,广泛应用于汽车电子、电焊机、电动工具等相关领域。 查看更多
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型号- AKG40N025G
AKG40N013G-T 40V 1.3mOhm N沟道SGT MOSFET
描述- 该资料为AKG40N013G-T型N沟道SGT MOSFET的数据手册。介绍了其设计用于超低导通电阻和高效率电源管理应用的特性,包括高速度平滑切换、优化的栅极电荷乘以导通电阻(FOM)、极低的导通电阻等。
型号- AKG40N013G-T
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加工精度:精密平面磨床正负0.002;铣床正负0.02,ZNC放电正负0.01。CNC加工材料:铝、钢、聚合物等材料。专注于半导体行业、医疗器械、汽车行业、新能源行业、信息技术行业零部件加工。
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定制液冷板尺寸5mm*5mm~3m*1.8m,厚度2mm-100mm,单相液冷板散热能力最高300W/cm²。
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