8 Common Kinds of Failure Causes and Solutions of MOSFETs
Avalanche failure: When the voltage is too high, it can cause a breakdown between drain sources, causing avalanche failure of components. To avoid this situation, it can be solved by reducing voltage, designing absorption circuits, or selecting appropriate gate resistors.
SOA failure: If it exceeds the safe working area, it can lead to issues such as overcurrent, overheating, and thermal breakdown, resulting in SOA failure. To avoid this situation, it is necessary to ensure power-limiting conditions, design overcurrent protection functions, and add measures such as heat sinks or fans.
Diode failure: The destruction of parasitic diodes can lead to freewheeling problems. To solve this problem, a fast body diode characteristic MOSFET or two back-to-back MOSFETs can be selected in series.
Resonance failure: The oscillation caused by parasitic parameters of the gate and circuit can lead to resonance failure issues. To avoid this situation, methods such as inserting gate resistors and using synchronous or balanced driving methods can be used.
Static electricity failure: Static electricity damage to the human body or equipment is a common cause of static electricity failure. To avoid this situation, anti-static measures need to be taken, such as adding grounding wires or metal mesh.
Gate breakdown: Excessive gate voltage can cause reverse breakdown between the gate and the substrate, resulting in gate breakdown failure. To avoid this situation, the gate voltage can be limited or a series current limiting resistor can be used to solve it.
Drain breakdown: Excessive drain voltage can cause reverse breakdown between the drain and the substrate, resulting in drain breakdown failure. To avoid this situation, methods such as limiting the drain voltage or series limiting resistors can be used.
Thermal runaway: An increase in temperature can lead to a decrease in channel resistance, forming a positive feedback loop, resulting in thermal runaway. To avoid this situation, methods such as increasing heat dissipation measures, and reducing working current and power can be used.
In short, when designing and using electronic components, it is necessary to have an understanding and understanding of various failure causes and solutions to avoid damage or safety issues. If you need help, please feel free to contact us at any time.
- |
- +1 赞 0
- 收藏
- 评论 0
本文由FY转载自HUA XUAN YANG ELECTRONIC News,原文标题为:Common Failure Causes and Solutions of MOSFETs,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
相关研发服务和供应服务
相关推荐
【经验】选择性价比高、寿命长、可靠性强、稳定性高、契合度高的MOSFET时需要考虑的5大参数因素
选择一个性价比高、寿命长、可靠性强、稳定性高、契合度高的MOSFET时,需要考虑以上几个因素和参数,并且需要确保导通电阻RDS(on)符合需求。只有在这些因素和参数都满足的情况下,才能选出最适合电路的MOSFET。为了确保电路的稳定性和可靠性,我们建议在选择MOSFET时,不要妥协任何一个因素或参数,而是要注重整体性能。
探讨如何在同步整流的应用中,提高MOSFET的稳定性和效率
MOSFET在电子设备中扮演着重要的角色,特别是在同步整流应用中。华轩阳电子建议您通过选择适当的MOSFET、优化驱动电路、实施良好的热管理、匹配负载、使用反馈回路以及进行功耗分析,您可以提高电路的稳定性和效率,从而改善产品的质量和性能。
Factors to Consider When Choosing a MOSFET
When selecting a MOSFET with high-cost performance, long life, strong reliability, high stability, and high fit, the above factors and parameters need to be considered, and it is necessary to ensure that the on-resistance RDS(on) meets the requirements.
原装替代,降低50%器件成本,高性能MOSFET厂商华轩阳电子授权世强硬创代理
MOSFET的SGT芯片工艺使寄生电容值至少降低30%,开关速度、开关损耗等参数得到显著改善;而Clip封装工艺搭配着芯片减薄技术,将RDon降低至1mR以下。
MOSFET and IGBT Working Principle and Structure
If the application is low voltage and high frequency, requiring fast switching and small switching losses, MOSFETs can be chosen. If the application is high voltage and low frequency and requires a smaller conduction resistance and greater resistance to breakdown, IGBT can be chosen.
华轩阳电子(MOSFET在微型光伏逆变器中的应用,能够有效降低光伏逆变器的功率损耗
在小功率应用中,如消费类电子产品、移动充电设备等,光伏逆变器不仅需要高效转换太阳能,还需要保持小巧轻便,以适应多样化的使用场景。在这一背景下,功率半导体分立器件MOSFET的选择变得至关重要。
【技术】MOSFET和IGBT区别及应用范围介绍
MOSFET和IGBT在不同的应用场合有着各自的优缺点。如果应用场合是低压高频的,需要快速开关和较小的开关损耗,可以选择MOSFET;如果应用场合是高压低频的,需要较小的导通电阻和较大的抗击穿能力,可以选择IGBT。
HXY MOSFET Provides A Power Device Solution for LED Backlit LCD TVs
HXY MOSFET provides a power device solution for LED backlit LCD TVs. This article will delve into how to inject powerful energy into LED backlit LCD TVs through carefully designed power device solutions, opening a new chapter in the visual feast.
电子商城
现货市场
服务
可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
实验室地址: 西安 提交需求>
登录 | 立即注册
提交评论