SHIKUES Showcased GaN FET Products and Silicon Carbide Schottky Diodes at Shenzhen Electronic Components and Materials Procurement Exhibition

On October 11, 2023, the three-day Shenzhen Electronic Components and Materials Procurement Exhibition opened at the Shenzhen International Convention and Exhibition Center (Bao’an). This exhibition aims to comprehensively showcase various electronic components and material products required for the design and manufacturing of electronic products, providing a unique procurement platform for professionals from the electronic product production field.

SHIKUES, as a strategic partner of global engineers, presented efficient solutions in popular areas such as fast charging, energy storage, and photovoltaics at this exhibition (located in Hall 3, booth number 3G15). On the first day of the exhibition, SHIKUES attracted the interest of numerous domestic and international engineers who came to consult, exchange ideas and place orders.

At the exhibition, SHIKUES showcased GaN FET products, including SKGM18N65-N8 and SKGM18N65-T, which use a Cascode structure, are easy to use, compatible with standard gate drivers, and feature low QRR, no need for free-wheeling diodes, and low switching losses. These products are widely used in the computer, power adapter, and consumer electronics fields and offer the following advantages:

High Efficiency and Energy Savings: GaN’s unique polarization characteristics and low on-resistance, along with fast switching, significantly reduce device conduction losses and switching losses.

Compact, Lightweight, and Cost-Effective: GaN devices can operate in higher-temperature environments due to their wide bandgap properties, enabling smaller and lighter power electronic devices, and reducing system manufacturing costs.

High Output Power Density and Strong Driving Force: GaN devices have high voltage tolerance and current density, enabling greater power density.

In addition, silicon carbide Schottky diodes (Q-SSCxxxx series) were also displayed on-site, attracting the attention of many engineers and procurement professionals. These products feature negligible reverse recovery, high-speed switching, insensitivity to temperature, low heat dissipation requirements, and high reliability, mainly used in inverters, uninterruptible power supplies, HID lighting, motor drives, and high-power equipment.

Advantages of silicon carbide diodes Include:

Fast switching speed and no reverse recovery current, reducing system losses, enhancing flexibility in system operating frequency, particularly suitable for solar inverters.

High efficiency, insensitivity to temperature, suitable for switch-mode power supplies, improving efficiency and reducing losses.

In electric vehicle charging stations, silicon carbide diodes offer high-frequency, high-efficiency characteristics, which can enhance efficiency and charging speed.

Join hands with SHIKUES in driving the development of the electronic technology field, including third-generation semiconductors like SiC and Gallium Nitride.