SiC MOSFET以其工作频率高、低导通、开关损耗低等优点,在感应加热电源中广泛应用
感应加热是通过电磁感应加热导电物体(通常是金属)的过程,通过物体内部的涡流产生热量。感应加热器由电磁铁和电子振荡器组成,电子振荡器产生的高频交流电流通过电磁铁绕组。快速的交变磁场穿过金属体,在导体内部产生电流,称为涡流。涡流流过导体的电阻,做功产生热量。
在铁磁性材料,如铁,热也可能由磁滞损失而产生。使用的电流频率取决于物体大小、材料类型、耦合(工作线圈和被加热物体之间)和穿透深度。
感应加热的功率可以从几百瓦到几十千瓦,取决于工件的尺寸。中频加热和高频加热的谐振频率分别在5~30kHz和100~450kHz之间。中频加热通常用于需要较深穿透深度的大型工件(如直径>50mm)。高频加热适用于小尺寸或薄件。
SiC MOSFET在感应加热中的优点
SiC MOSFET以其工作频率高、低导通、开关损耗低等优点,是感应加热电源最有前途的半导体器件。
高压SiC MOSFET可以运行在更高的开关频率,并减少线圈的铜使用量,为新一代产品的设计提供一个简洁的解决方案。更重要的是,由于功耗的降低,成本降低,同时也提高了电器的可靠性。
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本文由Vicky转载自HI-SEMICON公众号,原文标题为:SiC MOSFET感应加热领域应用,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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型号- SCF60R190C,SGM066R5T,SFF16N50,SFP9N20,SFF50N06,SFP3018T,SC3D06065A,SGP103R0T,SFP18N20,SCF65R170C,HGN042N10A,SGM042R1T,XNP40N60TH,SCF65R190TF,SFF13N50,IXFH22N65,SCW65R090CF,SGM6008T,SGM105R5T,SGS10HR11T,SGM107R7T,SFP6005T,SFM4010T,SCW65R090C,SC3D20065A,SFF20N50,MUR1660CT,SCW65R099TF,SCP65R090CF,SCF60R160C,SC3D10065A,SGM105R0T,SFF33N10,SGP105R0T,SFM10008T,SGM109R5T,SFM6008T,SFM6005ST,SFF18N50,MUR1560G,SFF20N65,SFP110N55,SFF16N65,SFP50N06,SC3D08065A,SC3D12065I,SCF60R125C,SFP59N10,SGM10HR14T,SC3D06065I,SCF65R240C,SGM042R4T,SFP6007T
HI-SEMICON 产品充电桩行业分享
型号- SCP65R090CF,SFS3401,SC3D40065D,SC3D40120D,SFS3400,SC3D40065I,SC3D40065H,SC3D15120H,SC3D40065G,SGP104R5T,SFS2N7002,SFS3407,SC3D10120H,SCW65R075CF,S3M040120K3,SCW65R050CF,SFD3009T,SGA104R5T,SC3D40065A,SFA10015T,SFS2301,SC3D30065I,SFS3415,SCW65R090CF,SC3D30065G,SFD50N06,SC3D30065H,SC3D30120H,SGD105R5T,SGP104R0T,SC3D30065D,SC3D30120D,SC3D30065A,SFD6008T,SCW65R041CF,S3M075120K3,SC3D20065I,SC3D20065H,SC3D20120H,SC3D20065A,SGA105R5T,SGA104R0T,SC3D20065D,SC3D20065G,SC3D20120D
HI-SEMICON 产品电机行业分享
型号- SGX10HR10T,SGM066R5T,SGM105R0T,SFN3009T,SGM031R7T,SGP104R5T,SFN3003T,MUR1660T,SGM109R5T,SFN3002PT,SFN3003PT,SFD6003PT,SGM041R8T,SFP6008T,SCX65R380C,SFD6005PT,SGM042R1T,SFN4006T5,SGP105R5T,SCF65R640C,MUR1560T,SCF65R540T,SGM107R7T,SC3D08060A,SFS4010T,SGM031R1T,SFDP12N65,SCF65R240C,SFN4009T,SFM3012T,SGM041R3T
【技术】探究碳化硅SiC MOSFET器件的UIS可靠性
近年来,SiC器件的发展取得了重大进展,尤其是在其可靠性方面,这使得SiC基器件已成为硅基功率器件的可行替代品。本文中HI-SEMICON将与大家一起探讨碳化硅SiC MOSFET器件的UIS可靠性。
技术探讨 发布时间 : 2023-08-19
HI-SEMICON深鸿盛公司介绍 以奋斗者为本,争做半导体功率器件领航者
型号- SFM0420T4,SFN3009T,SFS0407T4,SGD15N10,SFN3006PT,SFS300T12,SFD2006T,SGM6008T,SFM0320T4,SGD10HR20T,SFD6008T,SGS6001T4,SFN3003PT,SFQ0320T4,SFQ0420T4,SGM041R8T,SFM4009T,SFM041R1T,SFS4525T
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