40V/170A N-Channel Super Trench Power MOSFET NCEP40T17AG Ideal for High-frequency Switching and Synchronous Rectification
NCE NCEP40T17AG N-Channel Super Trench Power MOSFET uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
General Features
● VDS=40V, ID=170A
RDS(ON)=1.4mΩ (typical) @VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150℃ operating temperature
● Pb-free lead plating
● 100% UIS tested
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification
Absolute Maximum Ratings (TC=25℃ unless otherwise noted)
Electrical Characteristics (TC=25°C unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t≤10 sec.
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω
Package Marking and Ordering Information
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本文由Vicky转载自NCE,原文标题为:NCEP40T17AG NCE N-Channel Super Trench Power MOSF,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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