40V/170A N-Channel Super Trench Power MOSFET NCEP40T17AG Ideal for High-frequency Switching and Synchronous Rectification
NCE NCEP40T17AG N-Channel Super Trench Power MOSFET uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
General Features
● VDS=40V, ID=170A
RDS(ON)=1.4mΩ (typical) @VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150℃ operating temperature
● Pb-free lead plating
● 100% UIS tested
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification
Absolute Maximum Ratings (TC=25℃ unless otherwise noted)
Electrical Characteristics (TC=25°C unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t≤10 sec.
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω
Package Marking and Ordering Information
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本文由Vicky转载自NCE,原文标题为:NCEP40T17AG NCE N-Channel Super Trench Power MOSF,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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NCE(新洁能)MOSFET 选型表
NCE(新洁能)为电路设计师们提供全面的产品选择,击穿电压覆盖-200V至300V,以及100mA至400A的电流选择范围,低开关损耗的系列产品(产品名称后加标C)其有效降低了栅极电荷(Qg),尤其是栅极漏极间的电荷(Qgd),从而在快速开关过程中降低开关功率损耗。应对于半桥/全桥、AC/DC电源的同步整流以及其它需要反向续流的应用终端,新洁能的MOSFET着重优化了Body Diode,在提高和加快反向续流能力的同时,降低反向恢复过程中的峰值电流(Irm)和电压(Vrm)。推出的TO-220H封装外形(产品名称后加标H),有效地增加了用户在电路板装配MOSFET的工作效率,并大大降低成本,可广泛应用于直流-直流转换,次级侧同步整流器,电机控制等领域。
产品型号
|
品类
|
封装/外壳/尺寸
|
车规级/工业级
|
Technology
|
Polarity
|
BVDSS(V)
|
ID(A)
|
VTH(V)
|
RDS(ON)@4.5VTyp(mΩ)
|
RDS(ON)@4.5VMax(mΩ)
|
RDS(ON)@2.5VTyp(mΩ)
|
RDS(ON)@2.5VMax(mΩ)
|
VGS(th)(V)
|
CISS(pF)
|
QG(nC)
|
PD(W)
|
NCE12P09S
|
P-Channel Enhancement Mode Power MOSFET
|
SOP-8
|
工业级
|
Trench
|
P
|
-12
|
-9
|
-0.7
|
11.5
|
18
|
14
|
22
|
±12
|
2700
|
35
|
2.5
|
选型表 - NCE 立即选型
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可根据用户的MOSFET管进行参数检测出具报告,静态参数最大电压:7500V、检测最大电流6000A;动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等,具备可靠性评估及老化实验能力。
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