Hi-semicon‘s 3A/500V N-Channel Enhancement Mode Power MOSFET SFF3N50TS and SFD3N50TS
These N-Channel enhancement mode power field effect transistors are produced using HI-SEMICON's proprietary, planar stripe, VDMOS technology.
Features
◆VDS(V)=500V, ID=3A
◆RDS(ON)
TYP:3.5Ω@VGS=10V ID=1.5A
MAX:3.8Ω
Applications
◆Power faction correction (PFC)
◆Switched mode power supplies (SMPS)
◆Uninterruptible power supply (UPS)
◆LED lighting power
ABSOLUTE MAXIMUM RATINGS (TJ=25℃ unless otherwise noted)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
1.Pluse width limited by maximum junction temperature
2.L=40mH, IAS=3A, VDD=50V, VG=10V, RG=25Ω, starting TJ=25℃
3.Pulse Test: Pulse width ≤300μs, Duty cycle≤2%
4.Essentially independent of operating temperature
ORDERING INFORMATION
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本文由Vicky转载自HI-SEMICON，原文标题为:SFX3N50TS 3A, 500V N-CHANNEL POWER MOSFET，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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可根据用户的MOSFET管进行参数检测出具报告，静态参数最大电压:7500V、检测最大电流6000A；动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等，具备可靠性评估及老化实验能力。
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