Maplesemi‘s 30V/150A N-Channel MOSFET SLM150N03T Using Maplesemi‘s Advanced Planar Stripe TRENCH Technology
This Power MOSFET is produced using Maplesemi's advanced planar stripe TRENCH technology. This advanced technology has been especially tailored to minimize conduction loss, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
N-Channel MOSFET SLM150N03T Features
- N-Channel:30V 150A
RDS(on)Typ=2.4mΩ@VGS=10V
RDS(on)Typ=4.3mΩ@VGS=4.5V
- Very Low On-resistance RDS(ON)
- Low Crss
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
Application
PWM Application
Load Switch
Power Management
Absolute Maximum Ratings (TC=25℃ unless otherwise noted)
Electrical Characteristics (TC=25℃ unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition: TJ=25℃, VDD=15V, VG=10V, RG=25Ω, L=0.5mH, IAS=30A
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%
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本文由Vicky转载自Maplesemi，原文标题为:SLM150N03T 30V N-Channel MOSFET，本站所有转载文章系出于传递更多信息之目的，且明确注明来源，不希望被转载的媒体或个人可与我们联系，我们将立即进行删除处理。
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