650V/107A N-Channel Super Junction Power MOSFET NCE60NF019T Provided a Ultra-low RDS(ON) and Low Gate Charge
The series of devices use advaNCEd trench gate super junction technology and design to provide ultra-low RDS(ON) and low gate charge with a rapid recovery body diode. This NCE N-Channel Super Junction Power MOSFET fits the industry's AC-DC SMPS requirements for PFC, AC/DC power conversion, industrial power applications, fast charger, new energy vehicle charging pile, on-board OBC, etc.
Features
New technology for high voltage device
Ultra low on-resistance and ultra-low conduction losses
Ultra Low Gate Charge causes lower driving requirements
Diode reverse recovery speed is super fast
High reliability
ROHS compliant
Application
Power factor correction (PFC)
Switched mode power supplies (SMPS)
Uninterruptible Power Supply (UPS)
On-board charger (OBC)
Absolute Maximum Ratings (TC=25°C)
Thermal Characteristic
Electrical Characteristics (TA=25℃ unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25°C,VDD=50V,VG=10V, RG=25Ω
Package Marking And Ordering Information
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可根据用户的MOSFET管进行参数检测出具报告，静态参数最大电压:7500V、检测最大电流6000A；动态参数最大电压:3300V、检测最大电流:4500A。该测试标准满足GB、IEC及行业标准等，具备可靠性评估及老化实验能力。
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