30V/40A N-Channel Super Trench Power MOSFET NCEP3040Q, Providing the Most Efficient High Frequency Switching Performance
The NCEP3040Q uses Super Trench technology that is uniquely optimized to provide the most efficient high-frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
General Features
● VDS=30V,ID=40A
RDS(ON)=6.8mΩ (typical) @VGS=10V
RDS(ON)=9.5mΩ (typical) @VGS=4.5V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 150°C operating temperature
● Pb-free lead plating
● 100% UIS tested
● 100% ∆Vds tested
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification
Absolute Maximum Ratings (TC=25℃ unless otherwise noted)
Thermal Characteristic
Electrical Characteristics (TC=25℃ unless otherwise noted)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t≤10sec.
3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω
Package Marking and Ordering Information
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本文由Vicky转载自NCE,原文标题为:NCEP3040Q NCE N-Channel Super Trench Power MOSF,本站所有转载文章系出于传递更多信息之目的,且明确注明来源,不希望被转载的媒体或个人可与我们联系,我们将立即进行删除处理。
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